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    2SC184 Search Results

    2SC184 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SC1843-T-A Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    2SC184 Price and Stock

    Panasonic Electronic Components 2SC18470Q

    TRANS NPN 40V 1.5A TO126B-A1
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    Panasonic Electronic Components 2SC18460S

    TRANS NPN 35V 1A TO126B-A1
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    Rochester Electronics LLC 2SC1841-A

    0.05A, 120V, NPN, TO-92
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    DigiKey 2SC1841-A Bulk 2,319
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    Discrete Semiconductor Industries 2SC1847

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    Bristol Electronics 2SC1847 15
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    NEC Electronics Group 2SC1841-T

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    Quest Components 2SC1841-T 2,000
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    2SC184 Datasheets (182)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC184 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC184 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC184 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC184 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC184 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC184 Unknown Cross Reference Datasheet Scan PDF
    2SC184 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC184 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC184 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC184 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC184 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC184 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC184 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC184 USHA AM frequency converter IF amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. Scan PDF
    2SC1840 NEC Semiconductor Selection Guide 1995 Original PDF
    2SC1840 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC1840 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC1840 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC1840 Unknown Cross Reference Datasheet Scan PDF
    2SC1840 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    ...

    2SC184 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1847

    Abstract: 2SA886
    Text: JMnic Product Specification 2SC1847 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA886 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


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    PDF 2SC1847 O-126 2SA886 200MHz 2SC1847 2SA886

    2sc1846

    Abstract: 2SA0885
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C


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    PDF 2002/95/EC) 2SC1846 2SA0885 O-126B-A1 2sc1846 2SA0885

    2SA887

    Abstract: 2SC1848
    Text: SavantIC Semiconductor Product Specification 2SA887 Silicon PNP Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SC1848 APPLICATIONS ·Medium power amplifier PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol


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    PDF 2SA887 O-202 2SC1848 O-202) -100mA 2SA887 2SC1848

    2sc1846

    Abstract: 2SA885
    Text: SavantIC Semiconductor Product Specification 2SC1846 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA885 ·Low collector saturation APPLICATIONS ·For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter


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    PDF 2SC1846 O-126 2SA885 200MHz 2sc1846 2SA885

    2N3480

    Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849


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    PDF E01702L JC500P MMBC1009F5 TEC9013H HSE130 2N4956 PN3565 A8T3392 2N3395 2N3480 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2SC644 S 2n3400 2SC712

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C


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    PDF 2002/95/EC) 2SC1846 2SA0885

    2SC1846

    Abstract: No abstract text available
    Text: Power Transistors 2SC1846 Silicon NPN epitaxial planar type Unit: mm For midium output power amplification Complementary to 2SA0885 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 • Absolute Maximum Ratings TC = 25°C 0.5±0.1 0.5±0.1 4.6±0.2 Parameter Symbol


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    PDF 2SC1846 2SA0885 2SA0885 O-126B 200MHz 2SC1846

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SA0885 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage


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    PDF 2SA0885 2SC1846 2SC1846 O-126B 200MHz

    2SA0886

    Abstract: 2SA886 2SC1847
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 Unit: mm 8.0+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 3.2±0.2


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    PDF 2002/95/EC) 2SA0886 2SA886) 2SC1847 O-126B-A1 2SA0886 2SA886 2SC1847

    2sc1846

    Abstract: 2SA0885 2SC1846 data
    Text: Power Transistors 2SC1846 Silicon NPN epitaxial planar type Unit: mm For midium output power amplification Complementary to 2SA0885 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 • Absolute Maximum Ratings TC = 25°C 0.5±0.1 0.5±0.1 4.6±0.2 Parameter Symbol


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    PDF 2SC1846 2SA0885 O-126B 2sc1846 2SA0885 2SC1846 data

    2sc1846

    Abstract: 2SA0885 2SA885
    Text: Power Transistors 2SA0885 2SA885 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage


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    PDF 2SA0885 2SA885) 2SC1846 O-126B 2sc1846 2SA0885 2SA885

    2SA886

    Abstract: 2SC1847 2SA0886
    Text: Power Transistors 2SC1847 Silicon NPN epitaxial planar type Unit: mm For midium output power amplification Complementary to 2SA0886 2SA886 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage


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    PDF 2SC1847 2SA0886 2SA886) O-126B 2SA886 2SC1847 2SA0886

    2sc1849

    Abstract: No abstract text available
    Text: 2SC1849 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)135õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2SC1849 Freq150M q150M

    2SA887

    Abstract: 2SC1848
    Text: JMnic Product Specification 2SA887 Silicon PNP Power Transistors DESCRIPTION ・With TO-202 package ・Complement to type 2SC1848 APPLICATIONS ・Medium power amplifier PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol


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    PDF 2SA887 O-202 2SC1848 O-202) -100mA 2SA887 2SC1848

    2SC144

    Abstract: 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A
    Text: - 126 - m € T y p e No. Manuf. SANYO 3í 2 T O SHIBA B NEC B HITACHI ti S i l F U J ITSU ta t MATSUSHITA m ' h MITSUBISHI □ - A ROHM 2SC 1898 Ü3 r B $ f 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC 1899 SrBÍS 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC1845


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    PDF 2SC2839 2SC1393 2SC1S55 2SC1047 2SC180S 2SC1855 2SC1809 2SC144 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A

    transistor et 454

    Abstract: 2SC1842 JE 33 PA33 SC-43A JE 720 transistor transistor afr 46
    Text: NEC j b ^ > '> 9 Silicon T ra n s is to r 2SC1842 NPN Silicon Epitaxial Transistor Audio Frequency Low Noise Amplifier $Së/FEATU RES ^ • ^ H / P A C K A G E D IM EN SIO N S 7'Jt, O fftf;X f Pt, ffl t r —7" u =J - Unit : mm ¿"COfiJg|?£Í9j4'fxít?lt>I


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    PDF 2SC1842 SC-43A transistor et 454 2SC1842 JE 33 PA33 SC-43A JE 720 transistor transistor afr 46

    100 HFK

    Abstract: 16Oi 2SA886 2SC1847 10 HFK
    Text: _ PANASONIC IN DL /E LE K{ SE MI> 7EC D | b^32fiSM~DGG07t,S t> | ' T - 3 3 - H ‘ 2SA886 2SA886 ' > >J - I V 2SC1847 P N P 3 £ 's~f x — • ^ •J fé /S i P N P E p ita x ia l P la n a r Pow er Amplifier 'J > V 2 >J /'C om plem entary Pair with 2SC1847


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    PDF 00Qfl7b5 2SA886 2SC1847 2SC1847 2SC1847. O-126 O-126 100 HFK 16Oi 2SA886 10 HFK

    2SC1842

    Abstract: gv 273 PA33 2sc1842 nec
    Text: NEC NPN SILICON TRANSISTOR 2SC1842 DESCRIPTION The 2SC1842 is designed fo r use in an AF am plifier and general purpose. PACKAGE DIMENSIONS in m illim e te rs inches FEATURES • High h FE. 5.2M A X . h FE : 600 TYP. (V CE =6.0 V, l c = 1.0 mA) • Low Noise Voltage. NV : 30 mV T Y P ./V ce =6.0 V, lc = 1-0 m A ,\


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    PDF 2SC1842 2SC1842 ioiog10 38X10-" gv 273 PA33 2sc1842 nec

    transistor 2sc1841

    Abstract: 2SC1841 PA33 to92 af power amplifier "low speed switching transistor"
    Text: NEC DESCRIPTION NPN SILICON TRANSISTOR 2SC1841 The 2SC1841 is designed for use in AF amplifier, driver and low speed switching. PACKAGE DIMENSIONS in millimeters inches 5.2 MAX. FEATURES • High Voltage V CE0 : 120 V • High hFE hFE : 600 TYP. (V Ce = 6.0 V, lc = 1.0 mA)


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    PDF 2SC1841 2SC1841 transistor 2sc1841 PA33 to92 af power amplifier "low speed switching transistor"

    2SC1845

    Abstract: 2sc1845 transistor transistor2sc1845
    Text: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2SC1845 DESCRIPTIO N The 2SC1845 is the best fo r use as the m iddle range a m plifier PAC K A G E D IM EN SIO N S in H i-Fi stereo co n tro l am plifiers, power am plifiers, and etc. in millimeters inches FE A TU R E S


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    PDF 2SC1845 2SC1845 2sc1845 transistor transistor2sc1845

    2SA887

    Abstract: 2SC1848
    Text: AOK AOK Semiconductor Product Specification 2SA887 S ilicon PNP Power Transistors DESCRIPTION • With TO-202 package • Complement to type 2SC1848 APPLICATIONS • Medium power amplifier PINNING see Fig.2 PIN DESCRIPTION Base Collector F*g.1 sim p lifie d o u tlin e (TO-202) and s y m b o l


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    PDF 2SA887 O-202 2SC1848 100mA

    2SC1845 equivalent

    Abstract: sb 0201-a 2SC1845 2sC1845 NPN 2SC1845E 2sc1845 transistor OMA 221 2SA992 X541 S400
    Text: NEC m *=riXTH Aa Silicon T ra n s is to r 2SC1845 N P N i fcf ^ 41v 'T ^ U J i^ v ' y =1 > Y =7 > i> 7 .9 NPN Silicon Epitaxial Transistor Audio Frequency Low Noise Amplifier O ,14 W i 7, - f U t co ZJ > }. n — ;i, 7 > r > m ‘x & j: o p iiiW E , i t 'K & m ,


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    PDF 2SC1845 100k2 2SA992 2SC1845 equivalent sb 0201-a 2SC1845 2sC1845 NPN 2SC1845E 2sc1845 transistor OMA 221 X541 S400

    MD 202

    Abstract: 2SA887 2SC1848
    Text: 2SA887 2SA 887 '> I zi > P N P i 2SC1848 t 3 • # + ' > 7 J\z~7 \s t P N P E pitaxial Planar Power Amplifier >J/Complementary Pair with 2SC1848 U> iaS/Feature • 2SC1848 ¿ n > 7 ° U / 7 W output in com plem entary pair w ith 2SC1848. J Ê Î ift^ /È fê /A b s o lu te Maximum Ratings Ta —25 °C)


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    PDF 2SA887 2SC1848 2SC1848. Ta-25Â O-202 -10mAf MD 202 2SA887 2SC1848

    2SC1844

    Abstract: 2SA991 PA33 2SC 991
    Text: NEC NPN SILICON TRANSISTOR 2SC1844 D ESC R IP TIO N The 2SC 1844 is th e best fo r the head a m p lifie r o f tape recorders, the equalizer o f moving coil ty p e record players, and etc. P A C K A G E D IM E N S IO N S in m illim e te rs inches FEATURES


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    PDF 2SC1844 2SC1844 2SA991 PA33 2SC 991