2SC3645
Abstract: No abstract text available
Text: Type No. 2SA 1257 2S A 1415 2 S A 1418 2 S A 1419 2S A 1552 2 S A 1682 2S A 1700 2S A 1740 2S A 1772 2 S A 1773 2SC3143 2SC3645 2SC 3648 2SC 3649 2SC4003 2SC4027 2SC4412 2SC 4548 2SC4597 2SC 4598 2SC4599 2SC 4600 2SC4601 2SC 4602 2SC 4615 2SC 4616 FX510 Page
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2SA1257
2SA1415
2SA1418
2SA1419
2SA1552
2SA1682
2SA1700
2SA1740
2SA1772
2SA1773
2SC3645
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2SC SERIES TRANSISTORS
Abstract: Transistors Bipolar Transistors PNP 2SD
Text: Bipolar transistors-2SC series Bipolar transistors-2SC series The series name of ROHM’s bipolar transistors is used to classify these products as follows: PNP 2SA series 2SB series NPN 2SC series 2SD series In addition to these series, there are similar transistors that are manufactured to the US and
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Bipolar Transistors
Abstract: 2SC SERIES TRANSISTORS
Text: Bipolar transistors-2SC series Bipolar transistors-2SC series The series name of ROHM’s bipolar transistors is used to classify these products as follows: PNP 2SA series 2SB series NPN 2SC series 2SD series In addition to these series, there are similar transistors that are manufactured to the US and
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A933A
Abstract: No abstract text available
Text: Transistors General Purpose Transistor -50V, 0.15A 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS •F e a tu re s 1 ) Excellent •E x te rn a l dim ensions (Units: mm) ïife linearity. 2) Com plem ents the 2SC2412K/ 2SA1576A 2SA1037AK 2SC40S1 /2SC 4617/2SC 1740S.
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2SA1037AK
2SA1576A
2SA1774
2SA933AS
2SA1576A
2SC2412K/
2SC40S1
4617/2SC
1740S.
A933A
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2SC2526
Abstract: 2SC2525 TRANSISTOR 2Sc 2525 TRANSISTOR 2SC TRANSISTOR 2SC2525 2SA1076 LC 311 TRANSISTOR 2sc2526 "ring emitter" 2SC25
Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SC 2525 2SC 2526 S epte m be r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET The 2 S C 2 5 2 5 /2 S C 2 5 2 6 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h
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2SC2525
2SC2526
50juA
300jus
2SC2526
TRANSISTOR 2Sc 2525
TRANSISTOR 2SC
TRANSISTOR 2SC2525
2SA1076
LC 311
TRANSISTOR 2sc2526
"ring emitter"
2SC25
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2106a
Abstract: 2SC4919
Text: Ordering number: EN 4765 No-4765 //_ SANYO i Il 2SC 4919 NPN E pitaxial P lanar Silicon T ransistor // Muting Circuit Applications F e a tu re s • Very small-sized package perm itting 2SC4919-applied sets to be made sm aller and slim m er.
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2SC4919
2SC4919-applied
2106a
2SC4919
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FT3812
Abstract: 2SC2431 2SC2432 FT3862 2SA1042 2sc2132 c 2432 FUJITSU 2SC2431
Text: FUJITSU 2SC 2431 2SC 2/132 SILICON HIGH SPEED POWER TRANSISTORS F T 3 8 1 2 (F T 3 8 6 2 ) Septem ber 1979 SILICON NPN RING EMITTER TRANSISTOR (RET) T h e 2 S C 2 4 3 1 /2 S C 2 4 3 2 are silicon N P N general purpose, high p o w e r sw itching transistors fa b ric a te d w ith Fujitsu 's u n iq u e Ring E m itte r T ran sis to r (R E T ) te c h
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2SC2431
2SC2432
FT3812
FT3862
FT3862
2SA1042
2sc2132
c 2432
FUJITSU 2SC2431
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LT 2105
Abstract: 2SA1611 2SC4177
Text: DATA SHEET SILICON TRANSISTOR ELECTRON DEVICE 2SC 4177 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR FEATURES PACKAGE DIMENSIONS • Complementary to 2S A 1611 in millimeters • High DC Current Gain: hpE = 200 TYP. . V qe = 6.0 V , I q = 1.0 mA
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2SC4177
LT 2105
2SA1611
2SC4177
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Untitled
Abstract: No abstract text available
Text: 2SA1960 Silicon NPN Epitaxial HITACHI Application • • • • W ide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SC 5225. Features • High voltage large current operation.
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2SA1960
ADE-208-392
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2SC5297
Abstract: EN5291
Text: Ordering num ber:EN5291 no.5291 1/ 2SC 5297 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications i Features • High Speed : = 100ns typ. • High breakdown voltage : Vcbo= 1500V. • High reliability Adoption of HVP process .
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EN5291
2SC5297
100ns
2SC5297
EN5291
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2SC3853
Abstract: 2sa 1489 transistor 2SA1489 FM20 Sanken Transistor Mt 200 sanken audio
Text: Silicon NPN Triple Diffused Planer ☆ Complement to type 2SA1489 2SC3853 •MT-100 T03P • Outline Drawing 2 Application Example : Audio and General Purpose Electrical Characteristics Absolute Maximum Ratings (Ta=25'C) Symbol 2SC æ 53 VCBO 120 VCEO 80
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2SC3853
2SC3853
2SA1489
T-33-U
MT-100
Ta-26
100max
80min
2sa 1489 transistor
2SA1489
FM20
Sanken Transistor Mt 200
sanken audio
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101F
Abstract: ACY23 ACY23V ACY32 ACY32V Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1
Text: 2SC D • 023SbOS 0004041 4 PNP Transistors for AF Input Stages SIEMENS AKTIENGESELLSCHAF ISIE6 1 5C 04041 D ACY23 ACY32 ACY 23 and ACY 32 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case similar to T0-1 . All leads are electrically insulated from the case. The collector terminal
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00QMQ41
ACY23
ACY32
Q60103-Y23-E
Q60103-Y23-F
Q60103-Y32-E
Q60103-Y32-F
Q62901-B1
fl23SbQS
000404b
101F
ACY23V
ACY32V
Q62901-B1
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Toshiba 2SC3281
Abstract: 2sc3281 toshiba 2sc3281 transistor toshiba 2SC3281 2SA1302 data 2-21F1A 2SA1302 Toshiba 2Sa1302 2SA1302 transistor 2SA1302 TOSHIBA
Text: TOSHIBA TRANSISTOR SEM ICO ND UCTO R TOSHIBA TECHNICAL 2SC3281 DATA SILICON NPN TRIPLE DIFFUSED TYPE 2SC 3281 PO W ER A M PLIFIER APPLICATIONS. U nit in mm ;i3.3 t 0.2 • Complementary to 2SA1302 • Recommend for 1Q0W High Fidelity Audio Frequency Amplifier
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2SC3281
2SA1302
2SC3281
Toshiba 2SC3281
2sc3281 toshiba
2sc3281 transistor toshiba
2SA1302 data
2-21F1A
Toshiba 2Sa1302
2SA1302 transistor
2SA1302 TOSHIBA
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SSL-LX509F3SRD
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. SSF-LXH100M SRD-RP 0.55 [0 .02 2 ] 3.18 [0.125: 5.3 [0.209] 0 4 ,8 5 ELECTRO-OPTICAL CHARACTERISTICS Ta = 2SC [00,191] PARAMETER MIN PEAK WAVELENGTH 6,00 [0 ,2 3 6 ] 3.0Û [0.118] MAX 660 FORWARD VOLTAGE REVERSE VOLTAGE
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SSF-LXH100MSRD-RP
SSH-LXH100M,
SSL-LX509F3SRD,
100fiA
SSL-LX509F3SRD
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2SC1729
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC 1729 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio amplications. Dimensions in mm FEATURES • High power gain: Gpe > 10dB
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2SC1729
2SC1729
175MHz.
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Asy transistor
Abstract: transistor ASY TRANSISTOR ASY 75 germanium transistor asy asy70 TRANSISTOR ASY 0.25 W asy oi TRANSISTOR Q60118-Y48-D Q60118-Y48-E Q60118-Y70-D
Text: 2SC D • r- 3 7 - o i fl235b05 00QMGÛ7 b « S I E G PNP Transistors for Switching Applications A SY48 A SY70 - SIEMENS A K TI EN GE SE LL SCH AF Not for new design ASY 48 and ASY 70 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case
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fl235fc
ASY48
ASY70
Q60118-Y82
Q60118-Y48-D
Q60118-Y48-E
Q60118-Y48-F
Q60118-Y81
Q60118-Y70-D
Q60118-Y70-E
Asy transistor
transistor ASY
TRANSISTOR ASY 75
germanium transistor asy
asy70
TRANSISTOR ASY 0.25 W
asy oi TRANSISTOR
Q60118-Y48-D
Q60118-Y48-E
Q60118-Y70-D
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1926 is an NPN silicon epitaxial dual transistor that
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2SC1926
2SC1275,
P11670EJ1V0DS00
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TIBPAL20L8-30M
Abstract: TIBPAL20LB
Text: TIBPAL20L8-30M, TIBPAL20R4-30M, TIBPAL20RG-30M, TIBPAL20RB-30M TIBPAL20LB 25C, TIBPAL20R4 25C, TIBPAL20R6-2SC, TIBPAL20R8 25C LOW-POWER HIGH PERFORMANCE IMPACT PAL CIRCUITS D2920. MAY 1987-REVISED DECEMBER 1987 • • Low-Power, High Performance Reduced Ic e of 1 0 5 m A Max
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TIBPAL20L8-30M,
TIBPAL20R4-30M,
TIBPAL20RG-30M,
TIBPAL20RB-30M
TIBPAL20LB
TIBPAL20R4
TIBPAL20R6-2SC,
TIBPAL20R8
D2920.
1987-REVISED
TIBPAL20L8-30M
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2005A
Abstract: 2SC3000 J160 transistor marking JB
Text: Ordering number ; EN 86 6 C 2SC 3000 NPN Epitaxial P lanar Silicon Transistor HF Amp Applications Features . FBET series . High fT and small ere. Absolute H a x l m Ratings at Ta=2 5C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC3000
2034/2034A
SC-43
7tlt17D7b
2005A
2SC3000
J160
transistor marking JB
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2SC3779
Abstract: U40j 2SC3779 transistor
Text: Ordering number : EN 1954C 2SC 3779 NPN Epitaxial Planar Silicon Transistor S A \ Y O i UHF Low-Noise Amp, Wide-Band Amp Applications Applications . OHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NF=1.5dB typ f=0.9GHz . . High power gain: MAG*l4dB typ(f=0.9GHz).
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1954C
2SC3779
SC-51
rO-92
3C-43
2SC3779
U40j
2SC3779 transistor
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D410
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER SSS —LX2579IGW—1 60B REV. r - f 2.0 REV. A 5.0 .205 E.C.N. A NUMBER AND REVISION COMMENTS DATE E.C.N. # 1 1 1 4 6 . 0 1 .0 9 .0 7 C.085 ELECTRO-OPTICAL CHARACTERISTICS T* =2SC MIN PARAMETER PEAK WAVELENGTH MAX TYP
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LX2579IGWâ
55IPATION
DI35EMNATIDN
PAR11E5.
50LDERINC
D410
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1729 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio amplications. Dimensions in mm FEATURES • High power gain: Gpe > 10dB
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2SC1729
175MHz.
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2SC1970
Abstract: 2sc1970 transistor T-30 parameters S transistor NPN
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1970 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1970 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers on V H F band m obile radio applications. 9.1 ± 0 .7
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2SC1970
2SC1970
2sc1970 transistor
T-30
parameters S transistor NPN
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C102 M transistor
Abstract: No abstract text available
Text: 2SC4725 / 2SC4082 / 2SC3837K 2SC4726 / 2SC4083 / 2SC3838K/ 2SC4043S Transistors I High-Frequency Amplifier Transistor 18V, 1.5GHz 2SC4725 / 2SC4082 / 2SC 3837K •F e a tu re s •A b s o lu te maximum ratings (T a = 2 5 ”C ) Ì ) High fr. (fr= 1 .5 G H z )
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2SC4725
2SC4082
2SC3837K
2SC4726
2SC4083
2SC3838K/
2SC4043S
3837K
C102 M transistor
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