1002ds
Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5
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24EMP
BRC124ETP
BRC143ETP
BRC144ECM
CR3KM-12
FS10KM-6
FS10VS-6
FS16KM-6
FS16VS-6
HAT3017R
1002ds
4008ZB
2SC 9012
MP 1009 es
2SC 8050
20AAJ-8H
6020v4
2SC1417
2SC 8550
cr3as
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diode B8
Abstract: audio balun
Text: ADC12D1600/1000RF 12-Bit, 3.2/2.0 GSPS RF Sampling ADC 1.0 General Description 3.0 Applications The 12-bit 3.2/2.0 GSPS ADC12D1600/1000RF is an RFsampling GSPS ADC that can directly sample input frequencies up to and above 2.7 GHz. The ADC12D1600/1000RF augments the very large Nyquist zone of National’s GSPS
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ADC12D1600RF/ADC12D1000RF
12-Bit,
ADC12D1600/1000RF
12-bit
diode B8
audio balun
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Untitled
Abstract: No abstract text available
Text: ADC12D1600/1000RF 12-Bit, 3.2/2.0 GSPS RF Sampling ADC 1.0 General Description 3.0 Applications The 12-bit 3.2/2.0 GSPS ADC12D1600/1000RF is an RFsampling GSPS ADC that can directly sample input frequencies up to and above 2.7 GHz. The ADC12D1600/1000RF augments the very large Nyquist zone of National’s GSPS
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ADC12D1600RF/ADC12D1000RF
12-Bit,
ADC12D1600/1000RF
12-bit
1111b)
001Dh
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DH 582
Abstract: No abstract text available
Text: ADC12D1600/1000RF 12-Bit, 3.2/2.0 GSPS RF Sampling ADC 1.0 General Description 3.0 Applications The 12-bit 3.2/2.0 GSPS ADC12D1600/1000RF is an RFsampling GSPS ADC that can directly sample input frequencies up to and above 2.7 GHz. The ADC12D1600/1000RF augments the very large Nyquist zone of National’s GSPS
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ADC12D1600RF/ADC12D1000RF
12-Bit,
ADC12D1600/1000RF
12-bit
DH 582
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ADC12D1600RF
Abstract: ADC12D1x00 HSBGA 292
Text: ADC12D1600/1000RF 12-Bit, 3.2/2.0 GSPS RF Sampling ADC 1.0 General Description 3.0 Applications The 12-bit 3.2/2.0 GSPS ADC12D1600/1000RF is an RFsampling GSPS ADC that can directly sample input frequencies up to and above 2.7 GHz. The ADC12D1600/1000RF augments the very large Nyquist zone of National’s GSPS
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ADC12D1600/1000RF
12-Bit,
12-bit
ADC12D1600/1000RF
292ational
ADC12D1600RF
ADC12D1x00
HSBGA 292
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ADC12d1x00rf
Abstract: 2907H ADC12D1600RFRB
Text: ADC12D1600/1000RF 12-Bit, 3.2/2.0 GSPS RF Sampling ADC 1.0 General Description 3.0 Applications The 12-bit 3.2/2.0 GSPS ADC12D1600/1000RF is an RFsampling GSPS ADC that can directly sample input frequencies up to and above 2.7 GHz. The ADC12D1600/1000RF augments the very large Nyquist zone of National’s GSPS
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ADC12D1600RF/ADC12D1000RF
12-Bit,
ADC12D1600/1000RF
12-bit
ADC12d1x00rf
2907H
ADC12D1600RFRB
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Untitled
Abstract: No abstract text available
Text: ADC12D1600/1000RF 12-Bit, 3.2/2.0 GSPS RF Sampling ADC 1.0 General Description 3.0 Applications The 12-bit 3.2/2.0 GSPS ADC12D1600/1000RF is an RFsampling GSPS ADC that can directly sample input frequencies up to and above 2.7 GHz. The ADC12D1600/1000RF augments the very large Nyquist zone of National’s GSPS
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ADC12D1600/1000RF
12-Bit,
12-bit
ADC12D1600/1000RF
292-ball
1111b)
001Dh
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
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HSBGA 292
Abstract: No abstract text available
Text: ADC12D1000RF,ADC12D1600RF ADC12D1600/1000RF 12-Bit, 3.2/2.0 GSPS RF Sampling ADC Literature Number: SNAS519C ADC12D1600/1000RF 12-Bit, 3.2/2.0 GSPS RF Sampling ADC 1.0 General Description 3.0 Applications The 12-bit 3.2/2.0 GSPS ADC12D1600/1000RF is an RFsampling GSPS ADC that can directly sample input frequencies up to and above 2.7 GHz. The ADC12D1600/1000RF
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ADC12D1000RF
ADC12D1600RF
ADC12D1600/1000RF
12-Bit,
SNAS519C
ADC12D1600RF/ADC12D1000RF
12-bit
HSBGA 292
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Untitled
Abstract: No abstract text available
Text: ADC12D1600/1000RF 12-Bit, 3.2/2.0 GSPS RF Sampling ADC 1.0 General Description 3.0 Applications The 12-bit 3.2/2.0 GSPS ADC12D1600/1000RF is an RFsampling GSPS ADC that can directly sample input frequencies up to and above 2.7 GHz. The ADC12D1600/1000RF augments the very large Nyquist zone of National’s GSPS
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ADC12D1600/1000RF
12-Bit,
12-bit
ADC12D1600/1000RF
292-ball
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Untitled
Abstract: No abstract text available
Text: ADC12D1000RF, ADC12D1600RF ADC12D1600/1000RF 12-Bit, 3.2/2.0 GSPS RF Sampling ADC Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not
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ADC12D1000RF,
ADC12D1600RF
ADC12D1600/1000RF
12-Bit,
SNAS519G
SNAS519G
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000HÂ
2SB415
2SB 710
2sc1061
2sd524
2sb504
HD68P01
2sb507
2sa762
2sc827
2SC1362
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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Transistor BFT 99
Abstract: BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44
Text: asc D fi23SbOS QGG4713 S mSIZG ; • T -H 'H NPN Silicon RF Broadband Transistor BFT 75 - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 236 plastic package 23 A 3 DIN 41869 , intended for use in low-noise input and intermediate stages in RF
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Q0G4713
Q62702-F513
051i0
Transistor BFT 99
BFT75
Q62702-F513
siemens CIB
BFt 66
Transistor BFT 44
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2f5 transistor
Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
Text: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 DIN 41869 , intended fo r use in low-noise input and intermediate stages in RF
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a23SbOS
2f5 transistor
Transistor BFT 99
TIC 122 Transistor
2SC 2090
Transistor BFT 44
U/25/20/TN26/15/850/BFT75
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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thT404
ZV15A
ZY33A
ZT696
ZV15B
ZY33B
ZT697
ZT706
ZV27A
ZY62A
triac zd 607
hep c6004
2sb504
2SC 968 NPN Transistor
sje 607
motorola c6004
diode BY127 specifications
K872
af118
Motorola Semiconductor hep c3806p
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2sb504
Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St
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S029747
SS963&
2sb504
2t306
2N5983
2SD588
2sd73
2sc497
HD6801V
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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Sylvan58MC
09A001-00
66X0003-001
50746A
68X0003
68X0003-001
T-E0137
93B3-3
93B3-4
st178
diode E1110
CK705
ecg semiconductor replacement guide
CS1237
ME1120
TE1088
1N942
1N733A
Delco DTG-110B transistor
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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Analog Devices model 233J
Abstract: alfa uv API 45 AD0042C AC1007 analog devices TSDC1610 AD504 fetal monitor device circuit diagrams AD533J Helitrim AD 233J
Text: ANALOG DEVICES PRODUCT GUIDE Copyright 1975 by Analog Devices, Inc. FOREWORD This book is a guide to the broadest range of electronic compo nents and devices needed by designers of instrumentation and control systems which accept, analyze, process, convert, trans
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AD504J/K/L/M/S
AD505
AD506J/K/L/S
AD507J/K/S
AD2001
AD2002
AD2003
AD2004
AD2006
AD2008
Analog Devices model 233J
alfa uv API 45
AD0042C
AC1007 analog devices
TSDC1610
AD504
fetal monitor device circuit diagrams
AD533J
Helitrim
AD 233J
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T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,
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10DB2P
10DB4P
10DB6P
180B6A
T35W
transistor kt 606A
65e9 transistor
sr 6863 D
2SC965
CS9011
sr1k diode
KT850
TRANSISTOR st25a
transistor 130001 8d
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