Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0873 (2SB873) Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features 13.5±0.5
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2002/95/EC)
2SB0873
2SB873)
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Untitled
Abstract: No abstract text available
Text: 2SD1177 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB874 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO 100
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2SD1177
2SB874
O-126
M2000
D-85622
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2SB0873
Abstract: 2SB873
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0873 (2SB873) Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 ue pl d in an c se ed lud pl vi an m m es
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2002/95/EC)
2SB0873
2SB873)
2SB0873
2SB873
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2SB0873
Abstract: 2SB873
Text: Transistors 2SB0873 2SB873 Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Low collector-emitter saturation voltage VCE(sat)
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2SB0873
2SB873)
2SB0873
2SB873
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2SB873
Abstract: No abstract text available
Text: Transistor 2SB873 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features Low collector to emitter saturation voltage VCE sat . Large collector current IC.
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2SB873
2SB873
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2SB870
Abstract: 2SD866
Text: SavantIC Semiconductor Product Specification 2SB870 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD866 ·Low collector saturation voltage ·High collector current capability APPLICATIONS ·For power switching applications
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2SB870
O-220C
2SD866
O-220)
-100V;
2SB870
2SD866
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2SB871
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB871 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -20V(Min) ·High Speed Switching ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@IC= -10A APPLICATIONS
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2SB871
2SB871
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2SB870
Abstract: 2SD866
Text: Inchange Semiconductor Product Specification 2SB870 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD866 ・Low collector saturation voltage ・High collector current capability APPLICATIONS ・For power switching applications
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2SB870
O-220C
2SD866
O-220)
2SB870
2SD866
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2SD1177
Abstract: Hitachi DSA00164
Text: 2SD1177 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB874 Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter ID 2 kΩ (Typ) 200 Ω (Typ) 3 2SD1177 Absolute Maximum Ratings (Ta = 25°C) Item Symbol
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2SD1177
2SB874
O-220AB
D-85622
2SD1177
Hitachi DSA00164
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2SB870
Abstract: 2SD866
Text: JMnic Product Specification 2SB870 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD866 ・Low collector saturation voltage ・High collector current capability APPLICATIONS ・For power switching applications
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2SB870
O-220C
2SD866
O-220)
-100V;
2SB870
2SD866
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2SB873
Abstract: 2SB0873
Text: Transistor 2SB0873 2SB873 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC.
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2SB0873
2SB873)
2SB873
2SB0873
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0873 (2SB873) Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 8.6±0.2 M Di ain sc te on na tin nc ue e/
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2002/95/EC)
2SB0873
2SB873)
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b0246
Abstract: PH2955T 045H2 SMCP055 SGS-Ates B0246A B0-246 MJE2955T ST MJE2901K MJE2955K
Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 SOT3805 SOT3825 SOT3825 SOT3825 SOT3105 SOT3115 SOT3125 ST29051 ~gH~g~ 35 40 SOT3807 SOT3827 SOT3827 SOT3827 2SB871A 2SB936A 2SB948A 2SB896A ~~~~~~~ 45 50 SK3183 BOW22 B0664 B0664 B0246 B0206
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OT3116
OT3126
MJE2901
MJE2901K
MJE2901T
2N3789
2N3791
B0246A
B0246A
O-111
b0246
PH2955T
045H2
SMCP055
SGS-Ates
B0-246
MJE2955T ST
MJE2955K
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2sb874
Abstract: Hitachi DSA001650
Text: 2SB874 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1177 Outline TO-220AB 1 2 3 1. Base 2. Collector Flange 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO
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2SB874
2SD1177
O-220AB
D-85622
2sb874
Hitachi DSA001650
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2SB874
Abstract: 2SD1177
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB874 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -1.5A ·Complement to Type 2SD1177
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2SB874
2SD1177
2SB874
2SD1177
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Untitled
Abstract: No abstract text available
Text: 2SB874 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD1177 Outline T0-220AB 2 3 1. Base 2. Collector Flange 3. Emitter Absolute Maximum Ratings (Ta = 2 5 ° C ) Item Symbol Rating Unit Collector to base voltage
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2SB874
2SD1177
T0-220AB
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2sd1176
Abstract: 2SB872 2SB872A 2SD1176A Si PNP Epitaxial Planar Darlington
Text: 2SB872, 2SB872A /\^ -h = 5 y V 7¿9 2SB872, 2SB872A > IJ 3 y P N P X tf 2 + '> 7 ^ 7 ° \s — Ï M # - 'J > h > Si PN P E pitaxial Planar Darlington Uríit I mm 10.5 + 0.5 4*3SJ ^ i ' y ^ > ¿ ^ / M e d i u m Speed Switching s 2SD1176, 2SD1176A £ zi > '? lJ S > $ V /C om p lem en tary Pair
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2SB872,
2SB872A
2SD1176,
2SD1176A
2SD1176A
2SB872
2sd1176
2SB872A
Si PNP Epitaxial Planar Darlington
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Untitled
Abstract: No abstract text available
Text: 2SD1177 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB874 Outline T O -2 2 0 A B 2 O 1 1. Base 2. Collector Flange 3. Emitter O - —VA— —WV2 k£2 2 0 0 Si (Typ) (Typ) ì\' 2SD1177 Absolute Maximum Ratings (Ta = 25 °C)
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2SD1177
2SB874
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STB60
Abstract: No abstract text available
Text: 2SB874 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD1177 Outline TO-220AB 2 3 1. Base 2. Collector Flange 3. Emitter Absolute Maximum Ratings (Ta = 25 °C) Item Symbo Rating Unit Collector to base voltage
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2SB874
2SD1177
O-220AB
D-85622
STB60
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2SD1177
Abstract: 2SB874
Text: HITACHI 2SB874-SILICON PNP EPITAXIAL LOW PRiGUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1177 1. E m itte r 2. C ollector 3. Base D im e nìi« !« in mm 2-3±0,3 (JEDEC TO-126 MOD.) MAXIMUM COLLECTOR DISSIPATION CURVE I ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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2SB874
2SD1177
O-126
2SB874
2SD1177
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2SB871
Abstract: 2SB871A 2SD1443 2SD1443A
Text: 2S D 14 43, 2SD 1443A IV D - ^ y V ^ 5 > 2S D 1443,2S D 1443A • > ij 3 V N P N x — i~ f& /S i N P N \Z $ ¿ r i/ T /P o w er Amplifiers /P o w er Switching /L o w Voltage Switching 2SB871, 2SB871A * 's 9 ' /Complementary Pair with 2SB871, 2SB871A •
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2SD1443,
2SD1443A
2SD1443
2SB871,
2SB871A
2SB871A
2SB871
2SD1443A
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2SB870
Abstract: 2SD866A MS 3A 2SD866
Text: 2SD866, 2SD866A 2SD 866, 2SD866A v ij 13 > N P N x fcf£ M t l ^ -f 2SB870 • & JbZfl — NP N E pitaxial Planar Power Switching ' /Com plem entary Pair with 2SB870 Unit ! mm 10.5 + 0.5 / F e a tu re s • ? V 9 9 ■i = 7 i ' i f n t E V c E f s . O ^ m ^ c / L o W V cE sa t)
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2SD866,
2SD866A
2SB870
2SD866
2SB870
2SD866A
MS 3A
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Untitled
Abstract: No abstract text available
Text: HITACHI 2 S D 1 1 7 7 SILICON NPN EPITAXIAL LOW FR EQ U EN C Y POW ER A M P L If 1ER CO M PLEM ENTARY PAIR W ITH 2SB874 3¡1H 1. ¿outlet 2. CoUcckm: i. Bas* (D itiK U iK m i‘,\ tu m i 2.3103 (JEDEC TO-126 MOD I AB S O LU TE M A XIM U M RATINGS (Ta=25sC)
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2SB874
O-126
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Untitled
Abstract: No abstract text available
Text: 2SD1177 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB874 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O
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2SD1177
2SB874
O-126
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