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    2SB824 TRANSISTOR Search Results

    2SB824 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SB824 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SD1060

    Abstract: 2SB824 ITR08435
    Text: 2SB824 / 2SD1060 Ordering number : EN686J SANYO Semiconductors DATA SHEET 2SB824 / 2SD1060 PNP / NPN Epitaxial Planar Silicon Transistors 50V / 5A Switching Applications Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching.


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    2SB824 2SD1060 EN686J 2SB824 2SD1060 ITR08435 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB824 / 2SD1060 Ordering number : EN686J SANYO Semiconductors DATA SHEET 2SB824 / 2SD1060 PNP / NPN Epitaxial Planar Silicon Transistors 50V / 5A Switching Applications Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching.


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    2SB824 2SD1060 EN686J 2SB824 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB824 / 2SD1060 Ordering number : EN686J SANYO Semiconductors DATA SHEET 2SB824 / 2SD1060 PNP / NPN Epitaxial Planar Silicon Transistors 50V / 5A Switching Applications Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching.


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    EN686J 2SB824 2SD1060 2SB824 PDF

    2SB824

    Abstract: 2SD1060
    Text: JMnic Product Specification 2SB824 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector-emitter saturation voltage ・Complement to type 2SD1060 APPLICATIONS ・Suitable for relay drivers,high-speed Inverters,converters,and other general


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    2SB824 O-220 2SD1060 2SB824 2SD1060 PDF

    2SD1060

    Abstract: 2SB824
    Text: SavantIC Semiconductor Product Specification 2SD1060 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Complement to type 2SB824 APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general


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    2SD1060 O-220 2SB824 2SD1060 2SB824 PDF

    2SB824

    Abstract: 2SD1060
    Text: SavantIC Semiconductor Product Specification 2SB824 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector-emitter saturation voltage ·Complement to type 2SD1060 APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general


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    2SB824 O-220 2SD1060 2SB824 2SD1060 PDF

    2SB824

    Abstract: 2SD1060
    Text: Inchange Semiconductor Product Specification 2SB824 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector-emitter saturation voltage ·Complement to type 2SD1060 APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general


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    2SB824 O-220 2SD1060 2SB824 2SD1060 PDF

    2SD1060

    Abstract: 2SB824
    Text: Product Specification www.jmnic.com 2SD1060 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector-emitter saturation voltage ・Complement to type 2SB824 APPLICATIONS ・Suitable for relay drivers,high-speed Inverters,converters,and other general


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    2SD1060 O-220 2SB824 2SD1060 2SB824 PDF

    2SB824

    Abstract: 2SD1060
    Text: Ordering number:ENN686I PNP/NPN Epitaxial Planar Silicon Transistors 2SB824/2SD1060 50V/5A Switching Applications Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. unit:mm


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    ENN686I 2SB824/2SD1060 2010C 2SB824/2SD1060] O220AB 2SB824 2SB824 2SD1060 PDF

    2SB824

    Abstract: 2SD106
    Text: Ordering number:686I PNP/NPN Epitaxial Planar Silicon Transistors 2SB824/2SD1060 50V/5A Switching Applications Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. unit:mm


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    2SB824/2SD1060 2010C 2SB824/2SD1060] O-220AB SC-46 2SB824 2SB824 2SD106 PDF

    2SB824

    Abstract: 2SD1060
    Text: Inchange Semiconductor Product Specification 2SB824 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector-emitter saturation voltage ・Complement to type 2SD1060 APPLICATIONS ・Suitable for relay drivers,high-speed Inverters,converters,and other general


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    2SB824 O-220 2SD1060 2SB824 2SD1060 PDF

    2SB824 transistor

    Abstract: 2SB824
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB824 PNP SILICON TRANSISTOR PNP PLANAR SILICON TRANSISTOR „ FEATURES 1 * Low collector-to-emitter saturation voltage: VCE SAT =-0.4V max/IC=-3A, IB=-0.3A SOT-89 *Pb-free plating product number: 2SB824L „ ORDERING INFORMATION


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    2SB824 OT-89 2SB824L 2SB824-x-AB3-R 2SB824L-x-AB3-R QW-R208-042 2SB824 transistor 2SB824 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB824 PNP SILICON TRANSISTOR PNP PLANAR SILICON TRANSISTOR  1 FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =-0.4V max/IC=-3A, IB=-0.3A 1 TO-251 1  TO-126 ORDERING INFORMATION Ordering Number Lead Free


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    2SB824 O-251 O-126 2SB824G-x-AB3-R 2SB824L-x-T60-K 2SB824G-x-T60-K 2SB824L-x-TM3-T 2SB824G-x-TM3-T OT-89 PDF

    2SB824 transistor

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB824 PNP SILICON TRANSISTOR PNP PLANAR SILICON TRANSISTOR „ 1 SOT-89 FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =-0.4V max/IC=-3A, IB=-0.3A 1 TO-126 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free


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    2SB824 OT-89 O-126 2SB824L-x-AB3-R 2SB824G-x-AB3-R 2SB824L-x-T60-K 2SB824G-x-T60-K OT-89 O-126 QW-R208-042 2SB824 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB824 PNP SILICON TRANSISTOR PNP PLANAR SILICON TRANSISTOR „ 1 FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =-0.4V max/IC=-3A, IB=-0.3A 1 TO-251 1 „ SOT-89 TO-126 ORDERING INFORMATION Ordering Number Lead Free


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    2SB824 OT-89 O-251 O-126 2SB824L-x-AB3-R 2SB824G-x-AB3-R 2SB824L-x-T60-K 2SB824G-x-T60-K 2SB824L-x-TM3-T 2SB824G-x-TM3-T PDF

    2SB824

    Abstract: 2SD1060 EN6861 2SDI060
    Text: Ordering number: EN6861 I 2SB824/2SD1060 No.6861 PNP/NPN Epitaxial Planar Silicon Transistors SA\YO 50V/5A Switching Applications I A P PLICATIO NS • Suitable fo r relay drivers, high-speed inverters, converters, and other general large-current switching


    OCR Scan
    EN6861 2SB824/2SD1060 2SB824 2SD1060 EN6861 2SDI060 PDF

    2SB324

    Abstract: VQE 23D 2SB824
    Text: Ordering number: EN686I SMlYO I 2SB824/2SD1060 No.6861 PNP/NPN Epitaxial Planar Silicon Transistors i 50V/5A Switching Applications A P P L IC A T IO N S • S u ita b le fo r relay drivers, high-speed inverters, converters, and o th e r general large-current sw itching


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    EN6861 2SB824/2SD1060 2SB824 Tc-25Â 2SB324 VQE 23D PDF

    2SD313

    Abstract: transistor 2sC3781 2SD1159 2sa128
    Text: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used


    OCR Scan
    T0-220ML T0-220 2SA1469 2SC3746 2SA1470 2SC3747 2SA1471 2SC3748 2SB1134 2SD1667 2SD313 transistor 2sC3781 2SD1159 2sa128 PDF

    SB145

    Abstract: 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313
    Text: SAfíYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device ♦ More collector dissipation available when a device alone is used


    OCR Scan
    T0-220ML T0-220 2SA1469 2SC3746 2SA1470 2SC3747 2SA1471 2SC3748 2SB1134 2SD1667 SB145 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313 PDF

    2SB1267

    Abstract: No abstract text available
    Text: C o n tin u e d fro m p re v io u s p a g e Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 °C VcHsat) max @ lc - I b ; Applications VcBO (V) VCEO (V) lc (A) Pc (W) Ti (°C) ; VcE(sat) max (mV) lc (A) Ib (mA) ! It @ VCE •te


    OCR Scan
    2SB986 T0126 2SD1348 2SB1141 T0126ML 2SD1236L T0220 2SB921L 2SB1267 PDF

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan
    2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C PDF

    2SB1267

    Abstract: No abstract text available
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta = 25 "C VCB(sat) max @ 1C •IB Applications VCBO (V) VCEO to (V) (A) PC (W ) (2 ) VCE(sat) fr @ Vce hre @ V C E lC max (mV) 1C (A) (mA) te hFE XSF


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    2SC4727 2SC4728 2SC4729 2SD1235 T0220 2SDI236L 2SD1237L 2SA1469 2SB1267 PDF

    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


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    4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362 PDF

    2SB1205

    Abstract: 2S81119 2Sk222 2sa128
    Text: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf


    OCR Scan
    TQ220ML T0220ML T03PB 2SB1205 2S81119 2Sk222 2sa128 PDF