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    2SB78 Search Results

    2SB78 Datasheets (82)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB78 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB78 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB78 Unknown Vintage Transistor Datasheets Scan PDF
    2SB78 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB78 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB78 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB78 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB78 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB78 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB78 Unknown Cross Reference Datasheet Scan PDF
    2SB78 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB780 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB780 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB780 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB780 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB780 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB780 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB780 Unknown Cross Reference Datasheet Scan PDF
    2SB781 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB781 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

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    2SB0789

    Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
    Text: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm 4.5±0.1 Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to


    Original     		PDF 2SB0789, 2SB0789A 2SB789, 2SB789A) 2SD0968 2SD968) 2SD0968A 2SD968A) 2SB0789 2SB0789 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm (1.0) (1.0) (1.5) Rating Unit VCBO −120 V Collector-emitter voltage (Base open) VCEO −120 V VEBO


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958)

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm 4.5±0.1 Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to


    Original     		PDF 2SB0789, 2SB0789A 2SB789, 2SB789A) 2SD0968 2SD968) 2SD0968A 2SD968A) 2SB0789 2SB0789A

    2SB788

    Abstract: 2SB0788 2SD0958 2SD958
    Text: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788) 2SB788 2SB0788 2SD0958 2SD958

    2SB789A

    Abstract: 2SB789 2SD968 2SD968A marking symbol ER transistor IC 4020
    Text: Transistor 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD968 and 2SD968A Unit: mm Parameter Symbol Collector to 2SB789 base voltage 2SB789A Collector to 2SB789 Ratings –100 VCBO –120 –100


    Original     		PDF 2SB789, 2SB789A 2SD968 2SD968A 2SB789 2SB789A 2SB789 2SD968A marking symbol ER transistor IC 4020

    2SB0788

    Abstract: 2SB788 2SD0958 2SD958
    Text: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 2.4±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C Rating Unit


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788) 2SB0788 2SB788 2SD0958 2SD958

    2SA114

    Abstract: 2SA912 2SA554 MALLORY 150 BSW23 2sb807 2sa1285af LOW-POWER SILICON PNP 2sb788 2SA119
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 PTC103 A5T3498 2N3494 2N3498 MMBT8599 HSE175 BCX28 BC558B BCX35 PTC127 ~~~1b71 15 20 2SA1285E 2SA1285F 2SA1285G 2SB788 SOR5400 (A) 2SA1145 2SA912 2SA11450 ~~~~~~~XE 25 2SA1123 2SB792 2SB807 2SA1285AF


    Original     		PDF PTC103 A5T3498 2N3494 2N3498 MMBT8599 HSE175 BCX28 BC558B BCX35 PTC127 2SA114 2SA912 2SA554 MALLORY 150 BSW23 2sb807 2sa1285af LOW-POWER SILICON PNP 2sb788 2SA119

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planar type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 ● High collector to emitter voltage VCEO.


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0789, 2SB0789A (2SB789, 2SB789A) Silicon PNP epitaxial planar type Unit: mm For low-frequency driver amplification 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 • Features 1 0.4±0.08 3 2


    Original     		PDF 2002/95/EC) 2SB0789, 2SB0789A 2SB789, 2SB789A) 2SB0789

    2SB0789A

    Abstract: 2SB789A 2SD0968A 2SD968A IC 2003
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 For low-frequency driver amplification Complementary to 2SB0789A (2SB789A) 1.6±0.2 1 3 2 0.5±0.08 0.4±0.08


    Original     		PDF 2002/95/EC) 2SD0968A 2SD968A) 2SB0789A 2SB789A) 2SB0789A 2SB789A 2SD0968A 2SD968A IC 2003

    2SD958

    Abstract: 2SB788
    Text: Transistor 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB788 Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO


    Original     		PDF 2SD958 2SB788 2SD958 2SB788

    2SB0789

    Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
    Text: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm Parameter Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to


    Original     		PDF 2SB0789, 2SB0789A 2SB789, 2SB789A) 2SD0968 2SD968) 2SD0968A 2SD968A) 2SB0789 2SB0789 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A

    2SB0788

    Abstract: 2SB788 2SD0958 2SD958
    Text: Transistor 2SB0788 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 6.9±0.1 1.0 0.85 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958) 2SB0788 2SB788 2SD0958 2SD958

    2SB0788

    Abstract: 2SB788 2SD0958 2SD958
    Text: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788) 2SB0788 2SB788 2SD0958 2SD958

    2SB788

    Abstract: 2SD958
    Text: Transistor 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD958 Unit: mm 6.9±0.1 1.0 0.85 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage


    Original     		PDF 2SB788 2SD958 2SB788 2SD958

    2SB788

    Abstract: 2SB0788 2SD0958 2SD958
    Text: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788) 2SB788 2SB0788 2SD0958 2SD958

    2SB788

    Abstract: 2SB0788 2SD0958 2SD958
    Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm (1.0) 4.1±0.2 2.0±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C 0.45±0.05 Parameter Symbol


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958) 2SB788 2SB0788 2SD0958 2SD958

    2SB0788

    Abstract: 2SB788 2SD0958 2SD958
    Text: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) (1.5) R 0.9 1.0±0.1 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 • Features • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788) 2SB0788 2SB788 2SD0958 2SD958

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) 4.5±0.1 3.5±0.1 4.1±0.2 (0.85) Parameter


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958)

    2SB789

    Abstract: 2SB789A 2SD968 2SD968A
    Text: Transistor 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB789 and 2SB789A Unit: mm 0.5±0.08 1.5±0.1 • Absolute Maximum Ratings Parameter Collector to 2SD968 base voltage 2SD968A Collector to


    Original     		PDF 2SD968, 2SD968A 2SB789 2SB789A 2SD968 2SB789A 2SD968 2SD968A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0789, 2SB0789A (2SB789, 2SB789A) Silicon PNP epitaxial planar type Unit: mm For low-frequency driver amplification 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 M Di ain sc te on na tin nc


    Original     		PDF 2002/95/EC) 2SB0789, 2SB0789A 2SB789, 2SB789A) 2SB0789

    2SB788

    Abstract: 2SB0788 2SD0958 2SD958
    Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958) 2SB788 2SB0788 2SD0958 2SD958

    Untitled

    Abstract: No abstract text available
    Text: 2SB1183 / 2SB1239 / 2SB786F 2SD1759 / 2SD1861 / 2SD947F Transistors Power Transistor —40V, —2A 2SB 1183 / 2SB1239 / 2SB786F ^Absolute maximum ratings (Ta=25^C) 1 ) Darlington connection for high DC current gain. 2 ) Built-in 4 kO resistor between base and emitter.


    OCR Scan     		PDF 2SB1183 2SB1239 2SB786F 2SD1759 2SD1861 2SD947F D1759/2S /2SD947F.

    D947F

    Abstract: 2SD947F transistor d 947f TRANSISTOR 2sd947f
    Text: 2SB1183 / 2SB1239 / 2SB786F 2SD1759 / 2SD1861 / 2SD947F Transistors I Power Transistor —40V, —2A 2 S B 1 183 / 2S B 12 39 / 2S B 78 6F •F e a tu re s 1 ) Darlington connection for high D C current gain. 2 } Built-in 4 k Q resistor between b a se a n d emitter.


    OCR Scan     		PDF 2SB1183 2SB1239 2SB786F 2SD1759 2SD1861 2SD947F --40V, 2S81239 D947F 2SD947F transistor d 947f TRANSISTOR 2sd947f