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    2SB55 Search Results

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    2SB55 Price and Stock

    SPC Multicomp 2SB554

    Trans, Pnp, -180V, -15A, 150Deg C, 150W; Transistor Polarity:Pnp; Collector Emitter Voltage Max:180V; Continuous Collector Current:15A; Power Dissipation:150W; Transistor Mounting:Through Hole; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes |Multicomp Pro 2SB554
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    Newark 2SB554 Bulk 1,000
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    SPC Multicomp 2SB555

    Trans, Pnp, -140V, -12A, 150Deg C, 100W; Transistor Polarity:Pnp; Collector Emitter Voltage Max:140V; Continuous Collector Current:12A; Power Dissipation:100W; Transistor Mounting:Through Hole; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes |Multicomp Pro 2SB555
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    Newark 2SB555 Bulk 1,000
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    Toshiba America Electronic Components 2SB554

    Bipolar Junction Transistor, PNP Type, TO-3
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    Quest Components 2SB554 3
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    Glenair Inc 233-210-07ME19-32SB-559A

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    TTI 233-210-07ME19-32SB-559A Each 1
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    Toshiba America Electronic Components 2SB552-R

    IN STOCK SHIP TODAY
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    Component Electronics, Inc 2SB552-R 3
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    2SB55 Datasheets (179)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB55 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB55 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB55 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB55 Unknown Vintage Transistor Datasheets Scan PDF
    2SB55 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB55 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB55 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB55 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB55 Unknown Cross Reference Datasheet Scan PDF
    2SB550 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB550 Unknown Cross Reference Datasheet Scan PDF
    2SB550 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB550 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB550 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB550 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB550 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB550 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB550 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB550 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB550 Unknown Japanese Transistor Cross References (2S) Scan PDF
    ...

    2SB55 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB556

    Abstract: 2SB555
    Text: JMnic Product Specification 2SB555 2SB556 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD425/426 ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for high-power high-fidelity audio frequency amplifier output stage


    Original     		PDF 2SB555 2SB556 2SD425/426 2SB555 -10mA 2SB556

    2SD553

    Abstract: 2SB553
    Text: SavantIC Semiconductor Product Specification 2SD553 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB553 ·Low collector saturation voltage APPLICATIONS ·High current switching applications ·Power amplifier applications


    Original     		PDF 2SD553 O-220C 2SB553 2SD553 2SB553

    2sb555

    Abstract: 2SB556 2Sb556 equivalent
    Text: SavantIC Semiconductor Product Specification 2SB555 2SB556 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SD425/426 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity


    Original     		PDF 2SB555 2SB556 2SD425/426 2SB555 col56 -10mA 2SB556 2Sb556 equivalent

    2SD425

    Abstract: 2SD426 2SB555
    Text: SavantIC Semiconductor Product Specification 2SD425 2SD426 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SB555/556 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity


    Original     		PDF 2SD425 2SD426 2SB555/556 2SD425 2SD426 2SB555

    2SB551

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SB551 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2


    Original     		PDF 2SB551 -10mA; 2SB551

    2SD424

    Abstract: 2SB554
    Text: SavantIC Semiconductor Product Specification 2SD424 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SB554 ·High power dissipation ·High collector-emitter breakdown voltage : VCEO=180V min APPLICATIONS ·Power amplifier applications


    Original     		PDF 2SD424 2SB554 2SD424 2SB554

    2SB552

    Abstract: 2SD552
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB552 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·High Power Dissipation: PC= 150W(Max)@TC=25℃ ·Complement to Type 2SD552 APPLICATIONS ·High power amplifier applications.


    Original     		PDF 2SB552 -180V 2SD552 -150V; 2SB552 2SD552

    2SD424

    Abstract: 2SB554 2Sb554 equivalent
    Text: Inchange Semiconductor Product Specification 2SD424 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SB554 ・High power dissipation ・High collector-emitter breakdown voltage : VCEO=180V min APPLICATIONS ・Power amplifier applications


    Original     		PDF 2SD424 2SB554 2SD424 2SB554 2Sb554 equivalent

    2SB552

    Abstract: 2SD552
    Text: JMnic Product Specification 2SB552 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD552 APPLICATIONS ・Power amplifier applications ・Power switching applications ・DC-DC converters PINNING see Fig.2 PIN DESCRIPTION


    Original     		PDF 2SB552 2SD552 -25mA -220V; 2SB552 2SD552

    2SB554

    Abstract: 2Sb554 equivalent 2Sd424
    Text: Inchange Semiconductor Product Specification 2SB554 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD424 ・High power dissipation APPLICATIONS ・For use in power amplifier applications PINNING see Fig.2 PIN DESCRIPTION


    Original     		PDF 2SB554 2SD424 2SB554 2Sb554 equivalent 2Sd424

    2SB557

    Abstract: 2SD427 PNP TO3 50W
    Text: Inchange Semiconductor Product Specification 2SB557 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD427 ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for 50W high-fidelity audio


    Original     		PDF 2SB557 2SD427 2SB557 2SD427 PNP TO3 50W

    2SB550

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SB550 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplification ·For low speed and power switching PINNING see Fig.2


    Original     		PDF 2SB550 -10mA; 2SB550

    2SB553

    Abstract: 2SD553
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB553 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -4A ·Complement to Type 2SD553 APPLICATIONS ·High current switching applications. ·Power amplifier applications.


    Original     		PDF 2SB553 2SD553 2SB553 2SD553

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SB553 Features • • PNP Silicon Power Transistors With TO-220 package Amplifier applications Maximum Ratings Symbol V CEO V CBO V EBO


    Original     		PDF 2SB553 O-220 O-220

    2SB558

    Abstract: 2Sd428 2sb558 datasheet
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB558 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High Power Dissipation: PC= 60W(Max)@TC=25℃ ·Complement to Type 2SD428 APPLICATIONS ·Designed for power amplifier applications.


    Original     		PDF 2SB558 -100V 2SD428 2SB558 2Sd428 2sb558 datasheet

    2SB557

    Abstract: 2SD427 DATASHEET 2SB557 DATASHEET 2SD427 PNP TO3 50W
    Text: SavantIC Semiconductor Product Specification 2SB557 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SD427 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for 50W high-fidelity audio frequency amplifier output stage


    Original     		PDF 2SB557 2SD427 2SB557 2SD427 DATASHEET 2SB557 DATASHEET 2SD427 PNP TO3 50W

    2SD439

    Abstract: 2SB559 transistor af 126 JIS G 3201
    Text: SANYO SEMICONDUCTOR CORP 1EE D I 7 cH 7 G 7 b □ □ □ 3CIÛ2 S T - 3i-n 2SB559 PNP/ npn Epitaxial Planar Silicon Transistors 2009A Low Frequency Power Amp, Medium Speed Switching Applications 2SD439 372E Features . Large allowable collector dissipation and wide ASO.


    OCR Scan     		PDF 2SB559 2SD439 0DGB752 transistor af 126 JIS G 3201

    2SB555

    Abstract: 2SD425 2SB556 2SB55 TRANSISTOR 2sb556 2SD426 AC73 3SB555 2SB5 2SB5560
    Text: 2 s b 555 2 s b 556 1j □ > P N P = « s i b t - y h 5 SILICON PNP TRIPLE DIFFUSED M ESA TRANSISTOR o Power A m p lifie r u ? ? A p p lic a tio n s S ^ ; Pc=ioow C 2 S B 5 5 5 , 2 SB5 5 6 ES ÉffET -f ; V oEO =- 1 4 0 V 2SB555) VCE O = - 1 2 0 V ( 2 S B 5 5 6 )


    OCR Scan     		PDF 2SB555 2SB556) -140V 3SB555) 2SD425, 2SD426 2SB555) 2SD425 2SD426 2SB555 2SB556 2SB55 TRANSISTOR 2sb556 AC73 3SB555 2SB5 2SB5560

    2SD553

    Abstract: Toshiba 2sd553
    Text: TOSHIBA 2SD553 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 HIGH CURRENT SWITCHING APPLICATIONS PO W ER A M PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX Low Saturation Voltage : V q ^ sat “ 0.4V (Max.) (at Complementary to 2SB553.


    OCR Scan     		PDF 2SD553 2SB553. 2-10A1A O-220AB 2SD553 Toshiba 2sd553

    2SB553

    Abstract: No abstract text available
    Text: TO SH IBA 2SB553 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB553 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 10.3MAX, Low Collector Saturation Voltage : v CE(sat)= —0.4V (Max.) at 1C= -4 A


    OCR Scan     		PDF 2SB553 2SD553. 2SB553

    2SD424

    Abstract: 2SB554
    Text: 2SD424 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS. fS 25.0 MAX. FEATURES : OZÌJM&X. S3 • High Power Dissipation : Pc=150W • High Breakdown Voltage : V c e O=180V + 0.09 0i.o~o.o3 • Complementary to 2SB554. • Recommended for 100W High Fiderity Audio


    OCR Scan     		PDF 2SD424 2SB554. 2SD424 2SB554

    B205A

    Abstract: 2sb552
    Text: SILICON PNP TRIPLE DIFFUSED MESA TYPE 2SB552 INDUSTRIAL APPLICATIONS Unit in mm HGIH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES: • High Collector Power Dissipation PC=150W Tc=25°C


    OCR Scan     		PDF 2SB552 2SD552. 3-21AIA B205A 2sb552

    2SB823

    Abstract: No abstract text available
    Text: •a u 3 Discontii Package Larger FP 2SB544|P2 Larger FP Larger 2SB559 L F Power Amp, Medium Speed Switching FP 2SBS60 FP 2SB598 FP Electronic Governor DC* DC Converter, 1W Sound Output 2SB633P L F Power Amp, 25 to 3SW Output 2SB634 L F Power Amp 2SB544 M P )


    OCR Scan     		PDF 2SB544 2SB559 2SBS60 2SB598 2SB633P 2SC426 2SC536 2SB1037 2SB991 2SB823

    2SB558

    Abstract: ic co6
    Text: 2SB558 > S /U D > P N P = *S £ *fé h 5 > 5 > *5 > SILICON PNP TRIPLE DIFFUSED TRANSISTOR O U n it in mm • SSEftj tíf É ELECTRICAL CHARACTERISTICS C H A R A C T E R IS T IC MIN. TYP. MAX. r K M X ÏCBO VCB = ~ 50 v - XE = 0 - - -1 0 0 jUA » Bt M i* 1EBO


    OCR Scan     		PDF 2SB558 2SB558 ic co6