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    2SB507 NPN TRANSISTOR Search Results

    2SB507 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SB507 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD313

    Abstract: 2sd313 equivalent 2SB507 416W
    Text: SavantIC Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier


    Original     		PDF 2SD313 O-220C 2SB507 2SD313 2sd313 equivalent 2SB507 416W

    2sd313 equivalent

    Abstract: 2SB507 2SD313 transistor 2sd313
    Text: 2SD313 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER ! TO-220 Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS TA=25oC Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25oC)


    Original     		PDF 2SD313 O-220 2SB507 2sd313 equivalent 2SB507 2SD313 transistor 2sd313

    2SD313

    Abstract: 2SB507 2sd313 equivalent 2SD313 E
    Text: 2SD313 NPN Silicon Epitaxial Power Transistor P b Lead Pb -Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating COLLECTOR 2 1 BASE


    Original     		PDF 2SD313 2SB507 O-220 06-Feb-07 O-220 2SD313 2SB507 2sd313 equivalent 2SD313 E

    2sd313 equivalent

    Abstract: 2SD313 2sd313 applications 2SB507
    Text: Inchange Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier


    Original     		PDF 2SD313 O-220C 2SB507 2sd313 equivalent 2SD313 2sd313 applications 2SB507

    2SB507

    Abstract: 2SD389
    Text: 2SD389 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		PDF 2SD389 O-220 2SB507 2SB507 2SD389

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB507 TO-220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A z DC Current Gain hFE=40~320@IC=-1A z Complementray to NPN 2SD313


    Original     		PDF O-220 2SB507 O-220 2SD313 -200mA -500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507


    Original     		PDF O-220 2SD313 O-220 2SB507 200mA 500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507


    Original     		PDF O-220 2SD313 O-220 2SB507 200mA 500mA

    TRANSISTOR 2SB507

    Abstract: 2SB507 2SD313
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB507 TO-220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A z DC Current Gain hFE=40~320@IC=-1A z Complementray to NPN 2SD313


    Original     		PDF O-220 2SB507 O-220 2SD313 -200mA -500mA TRANSISTOR 2SB507 2SB507 2SD313

    2SD313

    Abstract: 2sd313 equivalent 2SB507
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507


    Original     		PDF O-220 2SD313 O-220 2SB507 200mA 500mA 2SD313 2sd313 equivalent 2SB507

    Untitled

    Abstract: No abstract text available
    Text: 2SD313 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER Features — 1 3 2 Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507 — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SD313 O-220 O-220 2SB507 200mA 500mA

    transistor 2sb507

    Abstract: 2SB507 2SB507 npn transistor
    Text: 2SB507 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER Features — — — 1 2 3 Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A DC Current Gain hFE=40~320@IC=-1A Complementray to NPN 2SD313 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SB507 O-220 O-220 2SD313 -100A, -10mA, -200mA -500mA transistor 2sb507 2SB507 npn transistor

    Untitled

    Abstract: No abstract text available
    Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


    Original     		PDF O-126 O-126 O-220 TIP32C

    Untitled

    Abstract: No abstract text available
    Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


    Original     		PDF O-220XD T0-220SD O-92MOD O-220 2SA940 TIP121 TIP126

    IR3001

    Abstract: pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF15030 PNP MJF15031 Complementary Power Transistors For Isolated Package Applications Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF15030 MJF15031 MJE15030 MJE15031 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 IR3001 pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c

    BD791 equivalent

    Abstract: Transistor BC 3199 BU108 2SA1046 MJE34 pnp BD140 pnp transistor BDX54 2N3773 NPN Audio Power AMP Transistor D45V silicon npn 2SD716 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD789 BD791* PNP BD790 BD792* Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage —


    Original     		PDF BD789, BD790 BD791, BD792 BD789 BD791* BD792* TIP73B TIP74 BD791 equivalent Transistor BC 3199 BU108 2SA1046 MJE34 pnp BD140 pnp transistor BDX54 2N3773 NPN Audio Power AMP Transistor D45V silicon npn 2SD716 transistor

    TIP142 TRANSISTOR REPLACEMENT

    Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V


    Original     		PDF TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP73B TIP74 TIP74A TIP74B TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142

    IR642

    Abstract: 2N6410 IR3001 2SD375 2SC931 bu180 BU108 BD411-8 bu500 BD661
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD787 PNP BD788 Complementary Plastic Silicon Power Transistors . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage —


    Original     		PDF BD787, BD788 BD787 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A IR642 2N6410 IR3001 2SD375 2SC931 bu180 BU108 BD411-8 bu500 BD661

    mje15033 replacement

    Abstract: BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD6036 PNP MJD6039 Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers.


    Original     		PDF 2N6034 2N6039 MJD6036 MJD6039 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144

    bdx54c equivalent

    Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc


    Original     		PDF BDX53B, BDX53C, 220AB BDX53B BDX53C BDX54B BDX54C TIP73B TIP74 TIP74A bdx54c equivalent BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386

    TRANSISTOR B507

    Abstract: TRANSISTOR d313 D313 amplifier SD313 Sanyo D313 D313 VOLTAGE REGULATOR D313 power amplifier D313 for amplifier power supply with regulator D313 2SC1175 transistor
    Text: SANYO SEMICONDUCTOR CORP 12E D | 7Ti7D7ti 0004007 T - 33- 2SD313, 3 1 4 • 2012 201 oA 2SB507, 508 NPN/pnp Triple Diffused Planar Silicon Transistors Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.


    OCR Scan     		PDF T-33-^ 2SB507, 2SB507 2SB508 2SD313 2SD314 2SB508, 2SD314, TRANSISTOR B507 TRANSISTOR d313 D313 amplifier SD313 Sanyo D313 D313 VOLTAGE REGULATOR D313 power amplifier D313 for amplifier power supply with regulator D313 2SC1175 transistor

    Sanyo D313

    Abstract: transistor D313 TRANSISTOR B507 2SD313 D314 transistor d313 transistor SD313 D313 for amplifier TRANSISTOR NPN D313 D313 amplifier
    Text: SANYO SEMICONDUCTOR CORP 12 E D | 7Ti7D7Li 0004ÛÛ7 S | T-3 2SD313, NPN/pnp Triple Diffused Planar • 3 1 4 201 oA 2SB507, 508 3 - Silicon Transistors 2012 Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.


    OCR Scan     		PDF 2SB507, 2SB507 2SB508 2SD313 2SD314 2SB508, 2SD314, Sanyo D313 transistor D313 TRANSISTOR B507 D314 transistor d313 transistor SD313 D313 for amplifier TRANSISTOR NPN D313 D313 amplifier

    2SD313

    Abstract: 2SB507 transistor 2sd313
    Text: ÆàMOS PEC NPN SILICON POWER TRANSISTORS .designed for the output stage of 15W to 25W AF power amplifier FEA TU RES: * Low Collector-Emitter Saturation Voltage VcE satf 1 OV(Max @ I c=2.0A,Ib=0.2A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to PNP 2SB507


    OCR Scan     		PDF 2SB507 2SD313 2SD313 2SB507 transistor 2sd313

    2SB507

    Abstract: 2SB507 npn transistor 2SD313 TRANSISTOR AF 416 pnp
    Text: ÆàMOS PEC PNP SILICON POWER TRANSISTORS .designed for the output stage of 15W to 25W AF power amplifier FEATURES: * Low Collector-Emitter Saturation Voltage v CE sat r 1 OV(Max @ I c=2.0A,Ib=0.2A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to NPN 2SD313


    OCR Scan     		PDF 2SD313 2SB507 2SB507 npn transistor 2SD313 TRANSISTOR AF 416 pnp