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    2SB1721(0)-Z-E1-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    Panasonic Electronic Components 2SB1722J0L

    TRANS PNP 100V 0.02A SSMINI3
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    2SB172 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB172 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB172 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB172 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB172 Unknown Cross Reference Datasheet Scan PDF
    2SB172 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB172 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB172 Unknown Vintage Transistor Datasheets Scan PDF
    2SB172 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB172 Unknown GE PNP ALLOY JUNCTION Scan PDF
    2SB172 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB172 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1722J Panasonic Transistor for high breakdown voltage low-frequency amplification Original PDF
    2SB1722J0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 100VCEO 20MA SSMINI-3 Original PDF
    2SB1724 Panasonic Power Device - Power Transistors - General-Purpose power amplification Original PDF
    2SB1724A Panasonic Power Device - Power Transistors - General-Purpose power amplification Original PDF

    2SB172 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sd2693

    Abstract: No abstract text available
    Text: Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage


    Original     		PDF 2SD2693, 2SD2693A 2SB1724, 2SB1724A 2SD2693 2SD2693A 60ndant

    2sd2693

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features


    Original     		PDF 2002/95/EC) 2SD2693, 2SD2693A 2SB1724, 2SB1724A 2SD2693 2SD2693A

    2sd2693

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features


    Original     		PDF 2002/95/EC) 2SD2693, 2SD2693A 2SB1724, 2SB1724A 2SD2693 2SD2693A

    2sd2693

    Abstract: 2SD2693A 2SB1724 2SB1724A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 M Di ain sc te


    Original     		PDF 2002/95/EC) 2SD2693, 2SD2693A 2SB1724, 2SB1724A 2SD2693 2sd2693 2SD2693A 2SB1724 2SB1724A

    2sd2693

    Abstract: 2SD2693A 2SB1724 2SB1724A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features


    Original     		PDF 2002/95/EC) 2SD2693, 2SD2693A 2SB1724, 2SB1724A 2SD2693 2sd2693 2SD2693A 2SB1724 2SB1724A

    2SB1722J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (0.50)(0.50) 0 to 0.02


    Original     		PDF 2002/95/EC) 2SB1722J 2SB1722J SC-89

    2SB1722J

    Abstract: SC-89
    Text: Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 0.50 (0.50) 0 to 0.02 • High collector-emitter voltage (Base open) VCEO • SS-Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SB1722J 2SB1722J SC-89

    2SB1722

    Abstract: 2SB172
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-frequency amplification • Features ue pl d in an c se ed lud pl vi an m m es


    Original     		PDF 2002/95/EC) 2SB1722G 2SB1722 2SB172

    2SB1724

    Abstract: 2SB1724A 2SD2693 2SD2693A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1724, 2SB1724A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2693 and 2SD2693A 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/


    Original     		PDF 2002/95/EC) 2SB1724, 2SB1724A 2SD2693 2SD2693A 2SB1724 2SB1724A 2SD2693A

    2sd2693

    Abstract: 2SB1724A 2SB172 2SB1724 2SD2693A
    Text: Power Transistors 2SB1724, 2SB1724A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2693 and 2SD2693A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C Collector-base voltage 2SB1724 Emitter open 2SB1724A Collector-emitter voltage 2SB1724


    Original     		PDF 2SB1724, 2SB1724A 2SD2693 2SD2693A 2SB1724 2SB1724A 2SB172 2SB1724 2SD2693A

    2SB1721

    Abstract: 2SB1721-Z 2sb1721z 2SB172 100VCE
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistors 2SB1721 PNP エピタキシアル形シリコン・トランジスタ 高速度スイッチング用 2SB1721 は，IC の出力から直接ドライブできるシリコン・パワー・


    Original     		PDF 2SB1721 2SB1721 O-251MP-3 2SB1721-Z O-252MP-3Z O-251) 100VCE O-252) D16287JJ2V0DS00 2SB1721-Z 2sb1721z 2SB172 100VCE

    2SB1722J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (0.375) 1.60±0.05


    Original     		PDF 2002/95/EC) 2SB1722J 2SB1722J SC-89

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (0.50)(0.50) 0 to 0.02


    Original     		PDF 2002/95/EC) 2SB1722J

    2SD2693A

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1724, 2SB1724A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2693 and 2SD2693A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SB1724, 2SB1724A 2SD2693 2SD2693A 2SD2693A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722G Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification • Package • High collector-emitter voltage (Base open) VCEO • SS-Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2002/95/EC) 2SB1722G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 1 (0.50)(0.50) 0 to 0.02


    Original     		PDF 2002/95/EC) 2SB1722J

    2SB1722J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (0.375) 1.60±0.05


    Original     		PDF 2002/95/EC) 2SB1722J 2SB1722J SC-89

    2sd2691

    Abstract: 2SC2691 2SB1725
    Text: This product complies with RoHS Directive EU 2002/95/EC . Power Transistors 2SD2691A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1725A 4.2±0.2 Unit: mm 10.0±0.2 1.0±0.2 2.5±0.1 13.0±0.2 90° • Features  Wide safe operation area


    Original     		PDF 2002/95/EC) 2SD2691A 2SB1725A 2sd2691 2SC2691 2SB1725

    2SC2691

    Abstract: 2sc2691a 2SD2691A 2sb1725 2sb172 2SK4072 2SK40 2sd26 2SD2691
    Text: This product complies with RoHS Directive EU 2002/95/EC . Power Transistors 2SD2691A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1725A 4.2±0.2 Unit: mm 10.0±0.2 1.0±0.2 Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SD2691A 2SB1725A 2SC2691 2sc2691a 2SD2691A 2sb1725 2sb172 2SK4072 2SK40 2sd26 2SD2691

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1724, 2SB1724A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2693 and 2SD2693A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SB1724, 2SB1724A 2SD2693 2SD2693A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722G Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification • Features ■ Package • High collector-emitter voltage (Base open) VCEO • SS-Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2002/95/EC) 2SB1722G

    2SD2693A

    Abstract: 2SB1724 2SB1724A 2SD2693
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1724, 2SB1724A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2693 and 2SD2693A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 15.0±0.5


    Original     		PDF 2002/95/EC) 2SB1724, 2SB1724A 2SD2693 2SD2693A 2SD2693A 2SB1724 2SB1724A

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ic ta 7699

    Abstract: 2SB176 2SB172 2SB177 TC 4863 GE PNP ALLOY JUNCTION
    Text: 2 SB17 2 , 2 SB1 76, 2SB177 2SB172, 2SB176, 2SB177 2SB177: PNP ^ /M A IN T E N A N C E PNP Alloy Junction Power Amplifier 4$ ^ /F e a tu r e s • B y^"C 0.4W "fo • 0. 4 W output in class B push-pull amplifier tk'k'M tfk /A b solu te Maximum Ratings (Ta=25°C)


    OCR Scan     		PDF 2SB172, 2SB176, 2SB177 2SBi77: 2SB172 2SB176 2SB172 ic ta 7699 2SB176 2SB177 TC 4863 GE PNP ALLOY JUNCTION