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    2SB168 Price and Stock

    ROHM Semiconductor 2SB1689T106

    TRANS PNP 12V 1.5A UMT3
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    2SB168 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB168 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB168 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB168 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB168 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB168 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB168 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB168 Unknown Cross Reference Datasheet Scan PDF
    2SB1683 Sanyo Semiconductor General-Purpose Amplifier Transistors Original PDF
    2SB1685 Sanken Electric TRANS DARLINGTON PNP 110V 6A 3TO-3P Original PDF
    2SB1686 Sanken Electric TRANS DARLINGTON PNP 110V 6A 3TO-220F Original PDF
    2SB1686 Sanken Electric Silicon PNP Epitaxial Planar Transistor Scan PDF
    2SB1686O Sanken Electric TRANS DARLINGTON PNP 110V 6A 3TO-220F Original PDF
    2SB1686P Sanken Electric TRANS DARLINGTON PNP 110V 6A 3TO-220F Original PDF
    2SB1686Y Sanken Electric TRANS DARLINGTON PNP 110V 6A 3TO-220F Original PDF
    2SB1687 Sanken Electric TRANS DARLINGTON PNP 110V 6A 3TO-3P Original PDF
    2SB1687O Sanken Electric TRANS DARLINGTON PNP 110V 6A 3TO-3P Original PDF
    2SB1687P Sanken Electric TRANS DARLINGTON PNP 110V 6A 3TO-3P Original PDF
    2SB1687Y Sanken Electric TRANS DARLINGTON PNP 110V 6A 3TO-3P Original PDF
    2SB1688 Hitachi Semiconductor Silicon PNP Transistor Original PDF
    2SB1688 Renesas Technology Silicon PNP Epitaxial High voltage amplifier Original PDF

    2SB168 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FML9 Transistors General purpose transistor isolated transistor and diode FML9 A 2SB1689 and a RB461F are housed independently in a UMT package. !External dimensions (Units : mm) !Applications DC / DC converter Motor driver 2.9 1.1 (3) (4) 0.95 0.95 1.9


    Original     		PDF 2SB1689 RB461F SC-74A

    2SB1689

    Abstract: T106
    Text: 2SB1689 Transistors Genera purpose amplification −12V, −1.5A 2SB1689 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.


    Original     		PDF 2SB1689 -200mV -500mA -25mA SC-70 OT-323 2SB1689 T106

    2SD2641

    Abstract: 2SB1685
    Text: Equivalent circuit 2SD2641 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1685 Unit V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA


    Original     		PDF 2SD2641 2SB1685) 100max 110min 5000min 60typ 55typ 2SD2641 2SB1685

    2SD2643

    Abstract: 2SB1687 transistor 2SB1687
    Text: C Equivalent circuit 2SD2643 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1687 110 V ICBO VCEO 110 V IEBO VEBO 5 V V(BR)CEO IC 6 (Ta=25°C) Conditions Ratings Unit VCB=110V 100max µA VEB=5V 100max µA IC=30mA 110min V A hFE VCE=4V, IC=5A


    Original     		PDF 2SD2643 2SB1687) 100max FM100 110min 5000min 60typ 55typ 2SD2643 2SB1687 transistor 2SB1687

    2SD2642

    Abstract: 2SB1686 FM20 2SD2642 equivalent transistor 2SB1686
    Text: 7 0 Ω E 2SB1686 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2642) V ICBO VCEO –110 V IEBO VEBO –5 V V(BR)CEO IC –6 A IB –1 PC Tj Ratings Unit VCB=–110V –100max µA –100max µA –110min V hFE VCE=–4V, IC=–5A 5000min∗


    Original     		PDF 2SB1686 2SD2642) 100max 5000min 100typ 110typ 110min O220F) 2SD2642 2SB1686 FM20 2SD2642 equivalent transistor 2SB1686

    2SB1688

    Abstract: 2SB1688TZ-E PRSS0003DA-A SC-43A
    Text: 2SB1688 Silicon PNP Epitaxial High voltage amplifier REJ03G0679-0300 Previous ADE-208-975A Rev.3.00 Aug.10.2005 Features • High breakdown voltage VCEO = -300V min Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector


    Original     		PDF 2SB1688 REJ03G0679-0300 ADE-208-975A) -300V PRSS0003DA-A 2SB1688 2SB1688TZ-E PRSS0003DA-A SC-43A

    IT0316

    Abstract: 2SB1683 2SD2639
    Text: Ordering number : ENN6960 2SB1683 / 2SD2639 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features • • Package Dimensions Wide ASO because of on-chip ballast resistance.


    Original     		PDF ENN6960 2SB1683 2SD2639 2SB1683 2010C 2SD2639] IT0316 2SD2639

    2SB1682

    Abstract: B1682 2SD2636
    Text: 2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington power transistor 2SB1682 Unit: mm ○ Power Amplifier Applications ○ High-Power Switching Applications • High-breakdown voltage: VCEO = −160 V (min) • Complementary to 2SD2636


    Original     		PDF 2SB1682 2SD2636 100ms* 2SB1682 B1682 2SD2636

    2SB1689

    Abstract: RB461F
    Text: FML9 Transistors General purpose transistor isolated transistor and diode FML9 A 2SB1689 and a RB461F are housed independently in a UMT package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver 2.9 1.1 (3) (4) 0.95 0.95 1.9 (5)


    Original     		PDF 2SB1689 RB461F SC-74A

    Untitled

    Abstract: No abstract text available
    Text: FML9 Transistors General purpose transistor isolated transistor and diode FML9 A 2SB1689 and a RB461F are housed independently in a UMT package. External dimensions (Unit : mm) Applications DC / DC converter Motor driver 2.9 1.1 (3) (4) 0.95 0.95 1.9 (5)


    Original     		PDF 2SB1689 RB461F SC-74A

    Untitled

    Abstract: No abstract text available
    Text: 2SB1688 Silicon PNP Epitaxial High voltage amplifier REJ03G0679-0300 Previous ADE-208-975A Rev.3.00 Aug.10.2005 Features • High breakdown voltage VCEO = -300V min Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector


    Original     		PDF 2SB1688 REJ03G0679-0300 ADE-208-975A) -300V PRSS0003DA-A

    Untitled

    Abstract: No abstract text available
    Text: FML9 Transistors General purpose transistor isolated transistor and diode FML9 A 2SB1689 and a RB461F are housed independently in a UMT package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver 2.9 1.1 (3) (4) 0.95 0.95 1.9 (5)


    Original     		PDF 2SB1689 RB461F SC-74A

    Untitled

    Abstract: No abstract text available
    Text: 2SB1689 Transistors Genera purpose amplification −12V, −1.5A 2SB1689 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.


    Original     		PDF 2SB1689 200mV 500mA SC-70 OT-323

    Untitled

    Abstract: No abstract text available
    Text: 2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington power transistor 2SB1682 Unit: mm ○ Power Amplifier Applications ○ High-Power Switching Applications • High-breakdown voltage: VCEO = −160 V (min) • Complementary to 2SD2636


    Original     		PDF 2SB1682 2SD2636 2-16C1A 100ms*

    Untitled

    Abstract: No abstract text available
    Text: 2SB1688 Silicon PNP Epitaxial High voltage amplifier REJ03G0679-0300 Previous ADE-208-975A Rev.3.00 Aug.10.2005 Features • High breakdown voltage VCEO = -300V min Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector


    Original     		PDF 2SB1688 REJ03G0679-0300 ADE-208-975A) -300V PRSS0003DA-A

    2SB1683

    Abstract: 2SD2639 12AAF NPN transistor Electronic ballast
    Text: Ordering number : ENN6960 2SB1683 / 2SD2639 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features • • Package Dimensions Wide ASO because of on-chip ballast resistance.


    Original     		PDF ENN6960 2SB1683 2SD2639 2SB1683 2010C 2SD2639] 2SD2639 12AAF NPN transistor Electronic ballast

    Untitled

    Abstract: No abstract text available
    Text: 2SB1689 Transistors Genera purpose amplification −12V, −1.5A 2SB1689 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 External dimensions (Unit : mm) Application Low frequency amplifier Driver 1.25 Features 1) A collector current is large. 2) Collector saturation voltage is low.


    Original     		PDF 2SB1689 200mV 500mA SC-70 OT-323

    2SC4793 2sa1837

    Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
    Text: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688


    Original     		PDF 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC4793 2sa1837 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303

    2sb1689 spice model

    Abstract: 4406 transistor "BF 430" 2SB168 2SB1689 BF 500 transistor BF-430 Model 430 95012
    Text: SPICE PARAMETER 2SB1689 by ROHM TR Div. * 2SB1689 PNP BJT model * Date: 2006/12/14 .MODEL 2SB1689 PNP + IS=500.00E-15 + BF=430.25 + VAF=8.5496 + IKF=1.1522 + ISE=500.00E-15 + NE=1.7681 + BR=62.537 + VAR=100 + IKR=.95012 + ISC=791.42E-15 + NC=2.9288 + NK=.62728


    Original     		PDF 2SB1689 Q2SB1689 00E-15 42E-15 000E-3 668E-3 302E-12 215E-12 2sb1689 spice model 4406 transistor "BF 430" 2SB168 2SB1689 BF 500 transistor BF-430 Model 430 95012

    2SB1689

    Abstract: T106
    Text: 2SB1689 Transistors Genera purpose amplification −12V, −1.5A 2SB1689 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.


    Original     		PDF 2SB1689 -200mV -500mA -25mA SC-70 OT-323 2SB1689 T106

    Untitled

    Abstract: No abstract text available
    Text: 2SB1689 Datasheet PNP -1.5A -12V Low Frequency Amplifier Transistors lOutline Parameter Value VCEO IC 12V 1.5A UMT3 Collector Base Emitter 2SB1689 SOT-323 SC-70 lFeatures 1) A Collecotr current is large.General Purpose. 2) Collector saturation voltage is low.


    Original     		PDF 2SB1689 OT-323 SC-70) 200mV 500mA, 2SD2652 R1102A

    d2636

    Abstract: 2SD2636 2SB1682 2sd26
    Text: 2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2636 Power Amplifier Applications High-Power Switching Applications • High-breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB1682 Unit: mm Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SD2636 2SB1682 100ms* d2636 2SD2636 2SB1682 2sd26

    2SB1688

    Abstract: DSA003645
    Text: 2SB1688 Silicon PNP Epitaxial High voltage amplifier ADE-208-975A Z 2nd. Edition Mar. 2001 Features • High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB1688 Absolute Maximum Ratings (Ta = 25°C) Item Symbol


    Original     		PDF 2SB1688 ADE-208-975A -300V 2SB1688 DSA003645

    60w af applications Sanyo

    Abstract: No abstract text available
    Text: Ordering n um ber: ENN6960 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 Is m I yo i 140V / 12A, AF 60W Output Applications Features Package Dimensions . Wide ASO because of’ on-chip ballast resistance.


    OCR Scan     		PDF ENN6960 2SB1683 2SD2639 2SB1683 2010C 60w af applications Sanyo