Contextual Info: FML9 Transistors General purpose transistor isolated transistor and diode FML9 A 2SB1689 and a RB461F are housed independently in a UMT package. !External dimensions (Units : mm) !Applications DC / DC converter Motor driver 2.9 1.1 (3) (4) 0.95 0.95 1.9

2SB1689

Abstract: T106
Contextual Info: 2SB1689 Transistors Genera purpose amplification −12V, −1.5A 2SB1689 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.

2SD2641

Abstract: 2SB1685
Contextual Info: Equivalent circuit 2SD2641 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1685 Unit V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA

2SD2643

Abstract: 2SB1687 transistor 2SB1687
Contextual Info: C Equivalent circuit 2SD2643 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1687 110 V ICBO VCEO 110 V IEBO VEBO 5 V V(BR)CEO IC 6 (Ta=25°C) Conditions Ratings Unit VCB=110V 100max µA VEB=5V 100max µA IC=30mA 110min V A hFE VCE=4V, IC=5A

2SD2642

Abstract: 2SB1686 FM20 2SD2642 equivalent transistor 2SB1686
Contextual Info: 7 0 Ω E 2SB1686 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2642) V ICBO VCEO –110 V IEBO VEBO –5 V V(BR)CEO IC –6 A IB –1 PC Tj Ratings Unit VCB=–110V –100max µA –100max µA –110min V hFE VCE=–4V, IC=–5A 5000min∗

2SB1688

Abstract: 2SB1688TZ-E PRSS0003DA-A SC-43A
Contextual Info: 2SB1688 Silicon PNP Epitaxial High voltage amplifier REJ03G0679-0300 Previous ADE-208-975A Rev.3.00 Aug.10.2005 Features • High breakdown voltage VCEO = -300V min Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector

IT0316

Abstract: 2SB1683 2SD2639
Contextual Info: Ordering number : ENN6960 2SB1683 / 2SD2639 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features • • Package Dimensions Wide ASO because of on-chip ballast resistance.

2SB1682

Abstract: B1682 2SD2636
Contextual Info: 2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington power transistor 2SB1682 Unit: mm ○ Power Amplifier Applications ○ High-Power Switching Applications • High-breakdown voltage: VCEO = −160 V (min) • Complementary to 2SD2636

2SB1689

Abstract: RB461F
Contextual Info: FML9 Transistors General purpose transistor isolated transistor and diode FML9 A 2SB1689 and a RB461F are housed independently in a UMT package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver 2.9 1.1 (3) (4) 0.95 0.95 1.9 (5)

Contextual Info: FML9 Transistors General purpose transistor isolated transistor and diode FML9 A 2SB1689 and a RB461F are housed independently in a UMT package. External dimensions (Unit : mm) Applications DC / DC converter Motor driver 2.9 1.1 (3) (4) 0.95 0.95 1.9 (5)

Contextual Info: 2SB1688 Silicon PNP Epitaxial High voltage amplifier REJ03G0679-0300 Previous ADE-208-975A Rev.3.00 Aug.10.2005 Features • High breakdown voltage VCEO = -300V min Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector

Contextual Info: FML9 Transistors General purpose transistor isolated transistor and diode FML9 A 2SB1689 and a RB461F are housed independently in a UMT package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver 2.9 1.1 (3) (4) 0.95 0.95 1.9 (5)

Contextual Info: 2SB1689 Transistors Genera purpose amplification −12V, −1.5A 2SB1689 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.

Contextual Info: 2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington power transistor 2SB1682 Unit: mm ○ Power Amplifier Applications ○ High-Power Switching Applications • High-breakdown voltage: VCEO = −160 V (min) • Complementary to 2SD2636

Contextual Info: 2SB1688 Silicon PNP Epitaxial High voltage amplifier REJ03G0679-0300 Previous ADE-208-975A Rev.3.00 Aug.10.2005 Features • High breakdown voltage VCEO = -300V min Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector

2SB1683

Abstract: 2SD2639 12AAF NPN transistor Electronic ballast
Contextual Info: Ordering number : ENN6960 2SB1683 / 2SD2639 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features • • Package Dimensions Wide ASO because of on-chip ballast resistance.

Contextual Info: 2SB1689 Transistors Genera purpose amplification −12V, −1.5A 2SB1689 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 External dimensions (Unit : mm) Application Low frequency amplifier Driver 1.25 Features 1) A collector current is large. 2) Collector saturation voltage is low.

2SC4793 2sa1837

Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
Contextual Info: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688

2sb1689 spice model

Abstract: 4406 transistor "BF 430" 2SB168 2SB1689 BF 500 transistor BF-430 Model 430 95012
Contextual Info: SPICE PARAMETER 2SB1689 by ROHM TR Div. * 2SB1689 PNP BJT model * Date: 2006/12/14 .MODEL 2SB1689 PNP + IS=500.00E-15 + BF=430.25 + VAF=8.5496 + IKF=1.1522 + ISE=500.00E-15 + NE=1.7681 + BR=62.537 + VAR=100 + IKR=.95012 + ISC=791.42E-15 + NC=2.9288 + NK=.62728

2SB1689

Abstract: T106
Contextual Info: 2SB1689 Transistors Genera purpose amplification −12V, −1.5A 2SB1689 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.

Contextual Info: 2SB1689 Datasheet PNP -1.5A -12V Low Frequency Amplifier Transistors lOutline Parameter Value VCEO IC 12V 1.5A UMT3 Collector Base Emitter 2SB1689 SOT-323 SC-70 lFeatures 1) A Collecotr current is large.General Purpose. 2) Collector saturation voltage is low.

d2636

Abstract: 2SD2636 2SB1682 2sd26
Contextual Info: 2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2636 Power Amplifier Applications High-Power Switching Applications • High-breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB1682 Unit: mm Maximum Ratings (Tc = 25°C)

2SB1688

Abstract: DSA003645
Contextual Info: 2SB1688 Silicon PNP Epitaxial High voltage amplifier ADE-208-975A Z 2nd. Edition Mar. 2001 Features • High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB1688 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

60w af applications Sanyo

Contextual Info: Ordering n um ber: ENN6960 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 Is m I yo i 140V / 12A, AF 60W Output Applications Features Package Dimensions . Wide ASO because of’ on-chip ballast resistance.