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    2SB126 Search Results

    2SB126 Result Highlights (5)

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    2SB1261(0)-Z-E1-AY Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SB1261(0)-Z-E2-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SB1261(0)-Z-E1-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SB1261-Z-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SB1261(0)-Z-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    2SB126 Price and Stock

    ROHM Semiconductor 2SB1260T100R

    TRANS PNP 80V 1A MPT3
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    DigiKey 2SB1260T100R Digi-Reel 1,000 1
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    Mouser Electronics 2SB1260T100R
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    Quest Components 2SB1260T100R 672
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    TME 2SB1260T100R 3
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    ComSIT USA 2SB1260T100R 3,000
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    Avnet Silica 2SB1260T100R 1,000 20 Weeks 1,000
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    ROHM Semiconductor 2SB1260T100Q

    TRANS PNP 80V 1A MPT3
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    DigiKey 2SB1260T100Q Cut Tape 606 1
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    2SB1260T100Q Digi-Reel 606 1
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    Quest Components 2SB1260T100Q 1,283
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    2SB1260T100Q 560
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    Ameya Holding Limited 2SB1260T100Q 40 1
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    Avnet Asia 2SB1260T100Q 24 Weeks 1,000
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    Avnet Silica 2SB1260T100Q 11 Weeks 1,000
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    Chip Stock 2SB1260T100Q 36,151
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    Micro Commercial Components 2SB1261-TP

    TRANS PNP 60V 3A DPAK
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    Rochester Electronics LLC 2SB1268R-E

    BIP PNP 5A 50V
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    DigiKey 2SB1268R-E Bulk 460
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    Rochester Electronics LLC 2SB1262-02-E

    BIPOLAR TRANSISTOR, 60V, 4A, PNP
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    DigiKey 2SB1262-02-E Bulk 219
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    2SB126 Datasheets (138)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB126 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB126 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB126 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB126 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB126 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB126 Unknown Cross Reference Datasheet Scan PDF
    2SB126 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB126 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB126 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB126 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB126 Unknown Vintage Transistor Datasheets Scan PDF
    2SB1260 Kexin Power Transistor Original PDF
    2SB1260 ROHM Power Transistor (-80V, -1A) Original PDF
    2SB1260 ROHM Power Transistor (- 80V, -1A) Original PDF
    2SB1260 ROHM Power Transistor Original PDF
    2SB1260 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SB1260 TY Semiconductor Power Transistor - SOT-89 Original PDF
    2SB1260 Unisonic Technologies POWER TRANSISTOR Original PDF
    2SB1260 Weitron PNP Plastic-Encapsulate Transistor Original PDF
    2SB1260 Unknown Transistor Substitution Data Book 1993 Scan PDF
    ...

    2SB126 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89


    Original     		PDF 2SB1260 2SB1260 OT-89 100ms QW-R208-017

    2SB1268

    Abstract: 2SB126 2sD190 3309ta EN226
    Text: Ordering number:EN2264B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1268/2SD1904 High-Current Switching Applicatons Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching


    Original     		PDF EN2264B 2SB1268/2SD1904 2049B 2SB1268/2SD1904] O-220MF 2SB1268 2SB1268 2SB126 2sD190 3309ta EN226

    2SB1261-Z

    Abstract: high hfe transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SB1261-Z TO-251 TRANSISTOR PNP FEATURES z z 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol 1 1. BASE High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V


    Original     		PDF O-251 2SB1261-Z O-251 -200mA -600mA -150mA 2SB1261-Z high hfe transistor

    2SB1260-P

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1260-P 2SB1260-Q 2SB1260-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SB1260-P 2SB1260-Q 2SB1260-R

    2SB1260

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1260 SOT-89 TRANSISTOR PNP FEATURES Power dissipation 0.5 PCM: Collector current -1 ICM: Collector-base voltage -80 V(BR)CBO: 1. BASE W (Tamb=25℃) 2. COLLECTOR


    Original     		PDF OT-89 2SB1260 OT-89 -50mA 30MHz 2SB1260

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1260-P 2SB1260-Q 2SB1260-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1


    Original     		PDF 2SB1260-P 2SB1260-Q 2SB1260-R

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated


    Original     		PDF 2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 SC-62 SC-63 2SB1241 2SD1733 2SD1863 2SD1898

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SB1261-Z TO-251 TRANSISTOR PNP FEATURES z z 1. BASE High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)


    Original     		PDF O-251 2SB1261-Z O-251 -200mA -600mA -150mA

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1898 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A DC *Good hFE linearity. *Low VCE(sat) *Complements the 2SB1260. 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL


    Original     		PDF 2SD1898 2SB1260. OT-89 200ms QW-R208-030

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1261   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x • • • PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage Execllent current-to-gain characteristics


    Original     		PDF 2SB1261

    SOD123 ZL marking

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 2SB1260 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers TRANSISTOR PNP


    Original     		PDF OT-89 OD-123+ FM120-M+ 2SB1260 FM1200-M+ OT-89 OD-123H 060TYP FM120-MH FM130-MH SOD123 ZL marking

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Dimensions (Unit : mm) Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type


    Original     		PDF 2SD1898 2SD1733 2SB1260 2SB1181 2SD1898 SC-62 SC-63 R1120A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 Dimensions (Unit : mm) 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type


    Original     		PDF 2SD1898 2SD1733 2SB1260 2SB1181 2SD1898 SC-62 R1120A

    2SB1260

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity.


    Original     		PDF 2SB1260 2SB1260 2SB1260L 2SB1260G 2SB1260-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-AB3-R 2SB1260L-x-TN3-R 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898 T100
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.4+0.1 −0.05 1.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 9.5±0.5 0.3 5.5+


    Original     		PDF 2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 2SD1898 2SD1863 2SB1241 2SD1733 T100

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features x x • • 2SB1261   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage Execllent current-to-gain characteristics


    Original     		PDF 2SB1261

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


    Original     		PDF 2SB1260 2SB1260 OT-89 O-252 2SB1260L 2SB1260-x-AB3-F-R 2SB1260L-x-AB3-F-R 2SB1260-x-TN3-F-R 2SB1260L-x-TN3-F-R 2SB1260-x-TN3-F-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES *High VCEO= 80V *High IC= 1A DC *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260. „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1898L-x-AB3-R


    Original     		PDF 2SD1898 2SB1260. OT-89 2SD1898L-x-AB3-R 2SD1898G-x-AB3-R QW-R208-030

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1898 PNP SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES *High VCEO= 80V *High IC= 1A DC *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260. „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1898L-x-AB3-R


    Original     		PDF 2SD1898 2SB1260. OT-89 2SD1898L-x-AB3-R 2SD1898G-x-AB3-R QW-R208-030

    2SB1261-Z

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1261-Z TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features 2.30 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2


    Original     		PDF 2SB1261-Z O-252 2SB1261-Z

    2SB1266

    Abstract: ICE 280 265
    Text: Transistors SMD Type AF Power Amplifier Applications 2SB1266 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Suitable for sets whose heighit is restricted. +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127


    Original     		PDF 2SB1266 O-252 2SB1266 ICE 280 265

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1260 TRANSISTOR PNP 1. BASE FEATURES z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements the 2SD1898


    Original     		PDF OT-89-3L OT-89-3L 2SB1260 2SD1898 -500mA -50mA -50mA, 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR PNP TO – 252 FEATURES z Low VCE(sat) z High DC Current Gain 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		PDF O-252 2SB1261

    ScansU9X27

    Abstract: No abstract text available
    Text: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)


    OCR Scan     		PDF 2SB1260/2SB1181/2SB1241 2SD1898/ 2SD1863/2SD1733. 2SB1260 2SB1241, 2SB1181 ScansU9X27