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    2SB1241 Price and Stock

    ROHM Semiconductor 2SB1241TV2R

    TRANS PNP 80V 1A ATV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1241TV2R Ammo Pack 2,500
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    ROHM Semiconductor 2SB1241TV2Q

    TRANS PNP 80V 1A ATV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1241TV2Q Ammo Pack 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.20967
    		Buy Now

    2SB1241 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1241 ROHM Power Transistor (- 80V, -1A) Original PDF
    2SB1241 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1241 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1241 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1241 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1241 ROHM Power Transistor (-80V, -1A) Scan PDF
    2SB1241 ROHM ATR, ATV Transistors Scan PDF
    2SB1241 ROHM ATR / ATV Transistors Scan PDF
    2SB1241TV2Q ROHM Power Transistor (-80 V, -1 A) Original PDF
    2SB1241TV2Q ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 80V 1A ATV Original PDF
    2SB1241TV2R ROHM Power Transistor (-80 V, -1 A) Original PDF
    2SB1241TV2R ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 80V 1A ATV Original PDF

    2SB1241 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated


    Original     		2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 SC-62 SC-63 2SB1241 2SD1733 2SD1863 2SD1898 PDF

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898 T100
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.4+0.1 −0.05 1.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 9.5±0.5 0.3 5.5+


    Original     		2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 2SD1898 2SD1863 2SB1241 2SD1733 T100 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 9.5±0.5 0.9 0.4+0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 1.5 0.9 5.5+0.3 −0.1 4.0 ±0.3 2.5+0.2 −0.1 (3)


    Original     		2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 2SB1260 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated


    Original     		2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 2SB1260 PDF

    transistor b54

    Abstract: transistor 222 2sB1241 2SB1181 2SB1260 2SD1733 2SD1863 2SD1898 high hfe transistor
    Text: Transistors Power Transistor *80V, *1A 2SB1260 / 2SB1181 / 2SB1241 FFeatures 1) High breakdown voltage and high current. VCEO = *80V, IC = *1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. FExternal dimensions (Units: mm)


    Original     		2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 96-123-B54) transistor b54 transistor 222 2sB1241 2SD1733 high hfe transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD1898 Features • • • • • High VCEO, VCEO=80V High IC, IC=1.0A DC Good hFE linearity Low VCE(sat) Complements the 2SB1260/2SB1241/2SB1181


    Original     		2SD1898 2SB1260/2SB1241/2SB1181 50uAdc) 80Vdc) 500mA/20mA) 10Vdc, 50mAdc, 100MHz) PDF

    silan

    Abstract: No abstract text available
    Text: 2SB124100MA 2SB124100MA SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB124100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø


    Original     		2SB124100MA 2SB124100MA 2SB124100MAYY 161dice/wafer silan PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB124100ML 2SB124100ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB124100ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching


    Original     		2SB124100ML 2SB124100ML 2SB124100MLYY PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD1898 Features • • • • • High VCEO, VCEO=80V High IC, IC=1.0A DC Good hFE linearity Low VCE(sat) Complements the 2SB1260/2SB1241/2SB1181


    Original     		2SD1898 2SB1260/2SB1241/2SB1181 OT-89 500mA/20mA) 10Vdc, 50mAdc, 100MHz) 40x40x0 PDF

    2SB1241

    Abstract: No abstract text available
    Text: SPICE PARAMETER 2SB1241 by ROHM TR Div. * 2SB1241 PNP BJT model * Date: 2006/12/04 .MODEL 2SB1241 PNP + IS=220.00E-15 + BF=140.43 + VAF=23.200 + IKF=7.9366 + ISE=220.00E-15 + NE=1.6291 + BR=30.282 + VAR=100 + IKR=13.783 + ISC=274.44E-12 + NC=1.5976 + NK=.83042


    Original     		2SB1241 Q2SB1241 00E-15 44E-12 000E-3 85E-12 315E-12 69E-12 2SB1241 PDF

    NPN transistor 2sd1863

    Abstract: 80V 1A NPN Transistor 2SB1260 2SD1733 2SD1768S 2SD1898 2SB1181 2SD1863 Vceo 80V Ic 1A 2SB1241
    Text: Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F FFeatures 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181. FExternal dimensions (Units: mm)


    Original     		2SD1898 2SD1733 2SD1768S 2SD1863 2SD1381F 2SB1260 2SB1241 2SB1181. 96-739-D54) 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F NPN transistor 2sd1863 80V 1A NPN Transistor 2SB1181 Vceo 80V Ic 1A PDF

    80V 1A NPN Transistor

    Abstract: 2SD1898 2SD1768S NPN transistor 2sd1863 2SD1768 2SD1863 2SB1181 2SD1733 2SB1241 2SB1260
    Text: Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F FFeatures 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181. FExternal dimensions (Units: mm)


    Original     		2SD1898 2SD1733 2SD1768S 2SD1863 2SD1381F 2SB1260 2SB1241 2SB1181. 96-739-D54) 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F 80V 1A NPN Transistor NPN transistor 2sd1863 2SD1768 2SB1181 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated


    Original     		2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 SC-62 SC-63 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.4+0.1 −0.05 1.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 9.5±0.5 0.3 5.5+


    Original     		2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 2SB1260 PDF

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated


    Original     		2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 SC-62 SC-63 2SB1241 2SD1733 2SD1863 2SD1898 PDF

    SC 2502

    Abstract: 2SB1181 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898 T100
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 (3) 0.4+0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 9.5±0.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 1.5 0.9 0.3


    Original     		2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 2SD1898 2SD1863 SC 2502 2SB1241 2SD1733 T100 PDF

    transistor 0401

    Abstract: 2SB1241
    Text: Power Transistor 80V, 1A 2SB1260 / 2SB1181 / 2SB1241 Dimensions (Unit : mm) 2SB1260 2SB1181 1.0±0.2 Structure Epitaxial planar type PNP silicon transistor 0.4+0.1 9.5±0.5 2.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 1.5 0.9 5.5+0.3 (3) 0.5±0.1


    Original     		2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 2SB1260 2SB1181 SC-62 SC-63 transistor 0401 2SB1241 PDF

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898 T100
    Text: Power Transistor 80V, 1A 2SB1260 / 2SB1181 / 2SB1241 Dimensions (Unit : mm) 2SB1260 2SB1181 1.0±0.2 Structure Epitaxial planar type PNP silicon transistor (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.4+0.1 −0.05 9.5±0.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1


    Original     		2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 2SD1898 2SD1863 2SD1733. R0039A 2SB1241 2SD1733 T100 PDF

    2SD1733

    Abstract: 2SB1181 2SB1241 2SB1260 2SD1768S 2SD1863 2SD1898 SC-72
    Text: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V


    Original     		2SD1898 2SD1733 2SD1768S 2SD1863 2SD1898 2SB1260 2SB1181 2SB1241 2SD1863 SC-72 PDF

    ScansU9X27

    Abstract: No abstract text available
    Text: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)


    OCR Scan     		2SB1260/2SB1181/2SB1241 2SD1898/ 2SD1863/2SD1733. 2SB1260 2SB1241, 2SB1181 ScansU9X27 PDF

    BH rn transistor

    Abstract: ROHM 2SD1733 2sb1241
    Text: Transistors Power Transistor -80V, -1A 2SB1260/2SB1181/2SB1241 current. •E x te rn a l dimensions (Units: mm) 2SB1260 2SB1181 co V oeo = - 8 0 V , to = - 1 A C0.5 / lO 2) Good hFE linearity. 3) 21 6 . 5 ± 0 .2 +0.2 2 3 ~ 0.1 0 .5 + 0 .1 c + 0 .2 5 - 0 .1


    OCR Scan     		2SB1260/2SB1181/2SB1241 2SB1260 2SB1181 2SD1898/ 2SD1863/2SD1733. SC-62 SC-63 2SB1260) 2SB1241) BH rn transistor ROHM 2SD1733 2sb1241 PDF

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1898
    Text: 2SB1260 / 2SB1181 /2SB1241 Transistors Power Transistor -80V, -1 A 2SB1260 / 2SB1241 •External dimensions (Units : mm) •Features 1) High breakdown voltage and high current. B V ceo = -8 0 V , lc = -1 A 2) Good hFE linearity. 3 ) LOW VcE(sat).


    OCR Scan     		2SB1260 2SB1181 /2SB1241 2SB1260/2SB1181 2SD1898 2SD186312SD1733. 2SB1260 2SB1181 SC-62 2SB1241 PDF

    b1241

    Abstract: 2SD189
    Text: Transistors Power Transistor -80V , -1A 2SB1260/2SB1181/2SB1241 # F e a tu re s • E x te rn a l dim ensions (Units: mm) 1) H igh breakdow n voltage and high current. V ceo = —80V, Ic = —1A 2) G ood hFE linearity. 3) Low VcE(sat). 4) C om plem ents the 2SD189 8/


    OCR Scan     		2SB1260/2SB1181/2SB1241 --80V, 2SD189 2SD1863/2SD1733. 96-123-B54) 2SB126 O-220, 0Dlb713 O-220FN b1241 PDF

    2SB909M

    Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
    Text: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p


    OCR Scan     		2SA937AMLN 2SC2021MLN 2SA937AM 2SA1547A 2SC2021M 2SC4010 2SC4776M 2SC4778 2SA874M 2SA1548 2SB909M 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2Sc4776 2SB1130 PDF