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    ROHM Semiconductor 2SB1198KT146Q

    TRANS PNP 80V 0.5A SMT3
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    CoreStaff Co Ltd 2SB1198KT146Q 110
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    2SB1198KT146Q 3,000
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    ROHM Semiconductor 2SB1198KT146R

    TRANS PNP 80V 0.5A SMT3
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    ROHM Semiconductor 2SB1198KL146Q

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    ROHM Semiconductor 2SB1198KFRAT146Q

    500 MA, 80 V, PNP, SI, SMALL SIGNAL TRANSISTOR
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    Quest Components 2SB1198KFRAT146Q 2,344
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    2SB1198KFRAT146Q 480
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    2SB1198KFRAT146Q 480
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    ROHM Semiconductor 2SB1198KFRAT146R

    500 MA, 80 V, PNP, SI, SMALL SIGNAL TRANSISTOR
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    Quest Components 2SB1198KFRAT146R 408
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    2SB1198K Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB1198K Kexin PNP Transistors Original PDF
    2SB1198K ROHM Low-frequency Transistor (-80V, -0.5A) Original PDF
    2SB1198K ROHM Low-frequency Transistor (-80V, -0.5A) Original PDF
    2SB1198K TY Semiconductor PNP Transistors - SOT-23 Original PDF
    2SB1198K Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1198K ROHM EM3, UMT, SMT Transistors Scan PDF
    2SB1198KT146Q ROHM TRANS PNP 80V 0.5A SOT-346 Original PDF
    2SB1198KT146Q ROHM Low-Frequency Transistor (-80 V, -0.5 A) Original PDF
    2SB1198KT146R ROHM Low-Frequency Transistor (-80 V, -0.5 A) Original PDF
    2SB1198KT146R ROHM TRANS PNP 80V 0.5A SOT-346 Original PDF

    2SB1198K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1198K

    Abstract: 2SD1782K T146 2SD1782K ROHM low capacitance NPN transistor
    Text: 2SD1782K Transistors Power Transistor 80V, 0.5A 2SD1782K zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) 2) High VCEO, VCEO=80V 3) Complements the 2SB1198K. 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1


    Original     		PDF 2SD1782K 2SB1198K. SC-59 2SB1198K 2SD1782K T146 2SD1782K ROHM low capacitance NPN transistor

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1198K SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low V CE sat .V CE(sat) =-0.2V 1 BVC EO=-80V 0.55 ● High berakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 V CE(sat)=-0.2V 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		PDF 2SB1198K OT-23 -100mA -50mA 100MHz

    2SB1198K

    Abstract: No abstract text available
    Text: 2SB1198K PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SC-59 A L S 2 FEATURES 3 Top View Dim Min Max A 2.70 3.10 B 1.30 1.70 C 1.00 1.30 B 1 D G Power dissipation : 0.2


    Original     		PDF 2SB1198K SC-59 -100mA -500mA -50mA 01-Jun-2002 2SB1198K

    npn 222

    Abstract: high hfe transistor NPN Transistor Characteristics NPN Silicon Epitaxial Planar Transistor transistor equivalent book 2SD1782K hFE is transistor NPN Transistor on 222 transistor Silicon NPN Epitaxial Planar Power Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE
    Text: Transistors Power Transistor 80V, 0.5A 2SD1782K FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


    Original     		PDF 2SD1782K 2SB1198K. 96-222-D93) npn 222 high hfe transistor NPN Transistor Characteristics NPN Silicon Epitaxial Planar Transistor transistor equivalent book 2SD1782K hFE is transistor NPN Transistor on 222 transistor Silicon NPN Epitaxial Planar Power Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE

    2SD1782K ROHM

    Abstract: No abstract text available
    Text: Transistors Power Transistor 80V, 0.5A 2SD1782K FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


    Original     		PDF 2SD1782K 2SB1198K. 96-222-D93) 2SD1782K ROHM

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP Transistors 2SB1198K SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low V CE sat .V CE(sat) =-0.2V 1 BVC EO=-80V 0.55 ● High berakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 V CE(sat)=-0.2V 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF 2SB1198K OT-23 -100mA -50mA 100MHz

    sot akr

    Abstract: No abstract text available
    Text: 2SB1198K SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 2.92 0.35 1.17 Features — — — 2.80 1.60 Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K 0.15 1.90 Dimensions in inches and (millimeters)


    Original     		PDF 2SB1198K OT-23-3L OT-23-3L -50mA) 2SD1782K -100mA -500mA, -50mA -50mA, 100MHz sot akr

    50256

    Abstract: 2SB1198K MJE50
    Text: SPICE PARAMETER 2SB1198K by ROHM TR Div. * 2SB1198K PNP BJT model * Date: 2006/12/15 .MODEL 2SB1198K PNP + IS=270.00E-15 + BF=202.53 + VAF=25 + IKF=4.9986 + ISE=270.00E-15 + NE=1.5975 + BR=6.4472 + VAR=100 + IKR=.718 + ISC=8.7772E-12 + NC=1.5323 + NK=1.2944


    Original     		PDF 2SB1198K Q2SB1198K 00E-15 7772E-12 08E-12 583E-12 31E-12 09E-9 50256 2SB1198K MJE50

    2SB1198K

    Abstract: 2SD1782K 2SD1782K ROHM
    Text: Transistors Low-frequency Transistor *80V, *0.5A 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm) FStructure Epitaxial planar type


    Original     		PDF 2SB1198K 2SD1782K. 96-136-B93) 2SB1198K 2SD1782K 2SD1782K ROHM

    Untitled

    Abstract: No abstract text available
    Text: Transistors AEC-Q101 Qualified Low-frequency Transistor *80V, *0.5A 2SB1198KFRA 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 2SD1782KFRA 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm)


    Original     		PDF AEC-Q101 2SB1198KFRA 2SB1198K 2SD1782KFRA 2SD1782K. 96-136-B93)

    bvceo

    Abstract: 231 transistor 2SB1198K 2SD1782K
    Text: Transistors Low-frequency Transistor *80V, *0.5A 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm) FStructure Epitaxial planar type


    Original     		PDF 2SB1198K 2SD1782K. 96-136-B93) bvceo 231 transistor 2SB1198K 2SD1782K

    Untitled

    Abstract: No abstract text available
    Text: 2SD1782K Transistors Power Transistor 80V, 0.5A 2SD1782K zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) 2) High VCEO, VCEO=80V 3) Complements the 2SB1198K. 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1


    Original     		PDF 2SD1782K 2SB1198K. SC-59

    transistor equivalent book 2SD1782K

    Abstract: 2SB1198K 2SD1782K
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1198K TRANSISTOR PNP FEATURES Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) z High breakdown voltage BVCEO=-80V z Complements the 2SD1782K 1. BASE


    Original     		PDF OT-23-3L OT-23-3L 2SB1198K -50mA) 2SD1782K -100mA -500mA, -50mA -50mA, 100MHz transistor equivalent book 2SD1782K 2SB1198K 2SD1782K

    sis m650

    Abstract: MIC5245 charger HC08 bluetooth keyboard and touchpad schematic CPC24 j3 SMD 20 pin connector sis 962 southbridge Preface Notebook Computer BR408 TI1410
    Text: Preface Notebook Computer D400S/D410S Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are


    Original     		PDF D400S/D410S sis m650 MIC5245 charger HC08 bluetooth keyboard and touchpad schematic CPC24 j3 SMD 20 pin connector sis 962 southbridge Preface Notebook Computer BR408 TI1410

    r305 finger print module

    Abstract: PCI7412 SP8K10S CLEVO JSPK1 samsung led tv power supply diagrams ALC260 amplifer 88e8038 Marvell 88E8038 TCD42A
    Text: Preface Notebook Computer M62NC Series Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are


    Original     		PDF M62NC C197D80 TZ3332 TZ3333 TZ3334 TZ3335 TZ3336 TZ3337 TZ3338 r305 finger print module PCI7412 SP8K10S CLEVO JSPK1 samsung led tv power supply diagrams ALC260 amplifer 88e8038 Marvell 88E8038 TCD42A

    Untitled

    Abstract: No abstract text available
    Text: 2SB1198K Transistor, PNP Features Dimensions Units: mm available in SMT3 (SMT, SC-59) package 2SB1198K (SMT3) 2.9 * 0-2 package marking: 2SB1198K; AK-*, where ★ is hFE code low collector saturation voltage, typically VCE(sat) = -0.2 V for Ic /Ib = -0.5 A/-50 mA


    OCR Scan     		PDF 2SB1198K SC-59) 2SB1198K; 2SD1782K

    Untitled

    Abstract: No abstract text available
    Text: 2SB1198K h 7 > y ^ $ / T ransistors 2SB 1198K Epitaxial Planar PNP Silicon Transistor <fi£Ji}J&^2J*8llifll/L o w Freq. Power Amp. • fcft i'W i vtiim/Dimensions Unit : mm 1) = ! U - 7 ^ t S i P VCE (sa t)= -0 .2 V (Typ.) (lc /lB = - 0 .5 A /- 5 0 m A )


    OCR Scan     		PDF 2SB1198K 1198K 2SD1782K A/--50mA) 2SD1782K.

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low-frequency Transistor -80V, - 0.5A 2SB1198K • Features 1) •E x te rn a l dim ensions (Unit:s mm) LOW VcE(sat). VcE(sat) = — 0.2V (Typ.) (I c / I b = 2) 2.9±0.2 1 1 + 0 -2 11- 0 1 1.0±O.2_ - 0 .5 A /- 5 0 m A ) . ± 0.1 08 0.950.95


    OCR Scan     		PDF 2SB1198K 2SD1782K. SC-59

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low-frequency Transistor -80V, - 0.5A 2SB1198K • Features 1) •E x te rn a l dimensions (Unit:s mm) LOW VcE(sat). 2.9+0.2 VcE(sat) = —0.2V (Typ.) (Ic / I b +0-2 L—i 1 11 1.9+0.2 = - 0 .5 A /-5 0 m A ) 0 .8 ± 0.1 □ 2) High breakdown voltage.


    OCR Scan     		PDF 2SB1198K 2SD1782K. SC-59 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low-frequency Transistor -80V, - 0.5A 2SB1198K •External dimensions (Unit:s mm) • F e a tu re s 1) LOW VcE(sat). VcE(sat) = — 0.2V (Typ.) ( I c / I b = -0.5A /-50m A ) 2) High breakdown voltage. B V ceo = — 8 0 V 3) Complements the 2SD1782K.


    OCR Scan     		PDF 2SB1198K /-50m 2SD1782K. -100m

    Untitled

    Abstract: No abstract text available
    Text: 2SB1198K Transistor, PNP Features Dimensions Units : mm available in SMT3 (SMT, SC-59) package 2SB1198K (SMT3) package marking: 2SB1198K; AK-*, where ★ is hFE code $ low collector saturation voltage, typically VCE(sat) = -0.2 V for lc/lB = -0-5 A/-50 mA


    OCR Scan     		PDF 2SB1198K SC-59) 2SB1198K; 2SD1782K stg25 2SB1198K

    761b nec

    Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
    Text: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338


    OCR Scan     		PDF 2SB927 2SB739 2SB1010 2SA1705 2SB740 2SA684 2SB1035 2SB1041 2SA133S 2SA1313 761b nec 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SB686 761-B

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    sot-23 MARKING CODE ZA

    Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
    Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same


    OCR Scan     		PDF OT-23, OT-89 OT-143 BZV49 OT-23 2SC2059K sot-23 MARKING CODE ZA b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23