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    Panasonic Electronic Components 2SB11540Q

    TRANS PNP 80V 10A TOP-3F
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    2SB1154 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1154 Panasonic PNP Transistor Original PDF
    2SB1154 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB1154 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB1154 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1154 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1154 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1154 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1154 Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Scan PDF
    2SB11540Q Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 80VCEO 10A TOP-3F Original PDF
    2SB1154P Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF
    2SB1154Q Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF
    2SB1154R Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF

    2SB1154 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1154

    Abstract: 2SD1705
    Text: JMnic Product Specification 2SB1154 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1705 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications PINNING


    Original     		PDF 2SB1154 2SD1705 10MHz 2SB1154 2SD1705

    2SD1705

    Abstract: 2SB1154 2sd170
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 (0.7) 15.0±0.3 (3.2) Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SD1705 2SB1154 2SD1705 2SB1154 2sd170

    2SB1154

    Abstract: 2SD1705
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features


    Original     		PDF 2002/95/EC) 2SB1154 2SD1705 SC-92 2SB1154 2SD1705

    2SD1705

    Abstract: 2SB1154
    Text: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 Parameter Symbol Rating Unit


    Original     		PDF 2SD1705 2SB1154 2SD1705 2SB1154

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 Parameter


    Original     		PDF 2002/95/EC) 2SB1154 2SD1705 SC-92

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C 15.0±0.2 φ 3.2±0.1 2.0±0.2


    Original     		PDF 2002/95/EC) 2SD1705 2SB1154

    2SB1154

    Abstract: 2SD1705
    Text: SavantIC Semiconductor Product Specification 2SB1154 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1705 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLICATIONS ·For power switching applications


    Original     		PDF 2SB1154 2SD1705 10MHz 2SB1154 2SD1705

    2SB1154

    Abstract: 2SD1705
    Text: Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm • Features ● ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage


    Original     		PDF 2SB1154 2SD1705 2SB1154 2SD1705

    2SB1154

    Abstract: 2SD1705
    Text: Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2SB1154 2SD1705 SC-92 2SB1154 2SD1705

    2SD1705

    Abstract: 2SB1154
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 φ 3.2±0.1 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SB1154 2SD1705 2SD1705 2SB1154

    2SD1705

    Abstract: 2SB1154
    Text: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE


    Original     		PDF 2SD1705 2SB1154 2SD1705 2SB1154

    2SB1154

    Abstract: 2SD1705
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1154 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -6A ·Complement to Type 2SD1705


    Original     		PDF 2SB1154 2SD1705 -100V; 2SB1154 2SD1705

    2SD1705

    Abstract: 2SB1154
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 (0.7) 15.0±0.3 (3.2) Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SD1705 2SB1154 2SD1705 2SB1154

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SB1154 2SD1705

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE


    Original     		PDF 2SD1705 2SB1154

    2SD1705

    Abstract: 2SB1154
    Text: Power Transistors 2SB1154 Silicon PNP epitaxial planar type Unit: mm For power switching Complementary to 2SD1705 Rating Unit Collector to base voltage VCBO −130 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −7 V Peak collector current


    Original     		PDF 2SB1154 2SD1705 2SD1705 2SB1154

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 (0.7) 15.0±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SD1705 2SB1154

    2SD1705

    Abstract: 2SB1154
    Text: Power Transistors 2SB1154 Silicon PNP epitaxial planar type Unit: mm For power switching Complementary to 2SD1705 Rating Unit Collector to base voltage VCBO −130 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −7 V Peak collector current


    Original     		PDF 2SB1154 2SD1705 2SD1705 2SB1154

    2SB1154

    Abstract: 2SD1705
    Text: Inchange Semiconductor Product Specification 2SB1154 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1705 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications


    Original     		PDF 2SB1154 2SD1705 2SB1154 2SD1705

    2SD1705

    Abstract: 2SB1154
    Text: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE


    Original     		PDF 2SD1705 2SB1154 2SD1705 2SB1154

    pnp 222A

    Abstract: 2SB1154 2SB1254 2SD1705
    Text: Power Transistors 2SB1154 2SB1154 Silicon PNP Epitaxial Planar Type Power Switching Complementary Pair with 2S D 1705 Package Dimensions . - U n it : mm 5.2m ax. . 15.5m ax. • Features s “ ^ 3 .2 6.9m in. I- • Low collector-eim itter saturation voltage VcEtsatj


    OCR Scan     		PDF 2SB1154 2SD1705 2SB1254) pnp 222A 2SB1154 2SB1254 2SD1705

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SB1154 2SB1154 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1705 •Features • Low collector-eim itter saturation voltage • Good linearity of DC c u rre n t gain Unit : mm 5.2max. ^ 3 .2


    OCR Scan     		PDF 2SB1154 2SD1705

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1705 2SD1705 Silicon NPN Epitaxial Planar Type Package Dim ensions Power Sw itching C om plem entary Pair with 2SB1154 • Features Iife / 6.9min. 1 cu- - r ii • L o w c o l l e c t o r - e m i t t e r s a tu r a t io n v o lta g e (V c e m )


    OCR Scan     		PDF 2SD1705 2SB1154 bT32fl52

    2SB1531

    Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140


    OCR Scan     		PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SB1531 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A