Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SB0788 Search Results

    2SB0788 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB0788 Panasonic PNP Transistor Original PDF
    2SB0788 Panasonic Silicon PNP epitaxial planar type small signal transistor Original PDF
    2SB0788 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB0788Q Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SB0788R Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF

    2SB0788 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm (1.0) (1.0) (1.5) Rating Unit VCBO −120 V Collector-emitter voltage (Base open) VCEO −120 V VEBO


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958)

    2SB788

    Abstract: 2SB0788 2SD0958 2SD958
    Text: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788) 2SB788 2SB0788 2SD0958 2SD958

    2SB0788

    Abstract: 2SB788 2SD0958 2SD958
    Text: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 2.4±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C Rating Unit


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788) 2SB0788 2SB788 2SD0958 2SD958

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planar type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 ● High collector to emitter voltage VCEO.


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788)

    2SB0788

    Abstract: 2SB788 2SD0958 2SD958
    Text: Transistor 2SB0788 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 6.9±0.1 1.0 0.85 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958) 2SB0788 2SB788 2SD0958 2SD958

    2SB0788

    Abstract: 2SB788 2SD0958 2SD958
    Text: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788) 2SB0788 2SB788 2SD0958 2SD958

    2SB788

    Abstract: 2SB0788 2SD0958 2SD958
    Text: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788) 2SB788 2SB0788 2SD0958 2SD958

    2SB788

    Abstract: 2SB0788 2SD0958 2SD958
    Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm (1.0) 4.1±0.2 2.0±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C 0.45±0.05 Parameter Symbol


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958) 2SB788 2SB0788 2SD0958 2SD958

    2SB0788

    Abstract: 2SB788 2SD0958 2SD958
    Text: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) (1.5) R 0.9 1.0±0.1 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 • Features • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788) 2SB0788 2SB788 2SD0958 2SD958

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) 4.5±0.1 3.5±0.1 4.1±0.2 (0.85) Parameter


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958)

    2SB788

    Abstract: 2SB0788 2SD0958 2SD958
    Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958) 2SB788 2SB0788 2SD0958 2SD958

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 (1.0) 4.1±0.2 2.4±0.2 1.0±0.1 (0.85) 0.55±0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958)

    2SB0788

    Abstract: 2SB788 2SD0958 2SD958
    Text: Transistor 2SB0788 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) 4.5±0.1 3.5±0.1 4.1±0.2 (0.85) Parameter Symbol


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958) 2SB0788 2SB788 2SD0958 2SD958

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    K 2411

    Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
    Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type


    OCR Scan     		PDF 3SK241 T0220F K 2411 k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019

    2SB0774

    Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)


    OCR Scan     		PDF O-126 2SC2258 2SC3063 2SC5340 O-202 T0-220 O-220F 2SC2923 2SC4714 2SC3942 2SB0774 2SA2004 2SB160 2SB642

    A1534

    Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin


    OCR Scan     		PDF T0-92 T092L: T0220F T0220 T092NL A1534 T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A

    2SC5224

    Abstract: 2SA1949 2SB1573 2SD2407 A1534A 2SB0774 2SB1576 2SB946 T0-92N 2SA1951
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions U Type (D36) TO-126 (D49 * , D50) MT3 Type (D40) MT4 Type (D41) TO-202 (D51) T0-220(a) (D52) TO-220F (D55) 2SC1398A


    OCR Scan     		PDF O-126 O-202 T0-220 2SC1398A 2SB1573 2SD2407 O-220F T0220F T0220 2SC5224 2SA1949 2SD2407 A1534A 2SB0774 2SB1576 2SB946 T0-92N 2SA1951