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    2SA473

    Abstract: 2SA473 equivalent 2sc1173 ic 10w power amplifier 2SA473 O
    Text: Inchange Semiconductor Product Specification 2SA473 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1173 ·Collector current :IC=-3A ·Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ·Low frequency power amplifier


    Original     		PDF 2SA473 O-220 2SC1173 2SA473 2SA473 equivalent 2sc1173 ic 10w power amplifier 2SA473 O

    2SC1173

    Abstract: 2SA473
    Text: Product Specification www.jmnic.com 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier ・Power regulator


    Original     		PDF 2SC1173 O-220 2SA473 2SC1173 2SA473

    Untitled

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier ・Power regulator


    Original     		PDF 2SC1173 O-220 2SA473

    2sc1173

    Abstract: 2sc1173 equivalent 2sc1173 equivalent Silicon NPN Power Transistors 2SA473 ic 10w power amplifier
    Text: Inchange Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier


    Original     		PDF 2SC1173 O-220 2SA473 2sc1173 2sc1173 equivalent 2sc1173 equivalent Silicon NPN Power Transistors 2SA473 ic 10w power amplifier

    2sa473

    Abstract: 2SA473 O 2SC1173 2SA473 0
    Text: SavantIC Semiconductor Product Specification 2SA473 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1173 ·Collector current :IC=-3A ·Collector dissipation:PC=10W@TC=25 APPLICATIONS ·Low frequency power amplifier ·Power regulator


    Original     		PDF 2SA473 O-220 2SC1173 2sa473 2SA473 O 2SC1173 2SA473 0

    2SC1173

    Abstract: 2sc1173 equivalent Silicon NPN Power Transistors 2SA473 2sc1173 equivalent
    Text: SavantIC Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA473 ·Collector current :IC=3A ·Collector dissipation:PC=10W@TC=25? APPLICATIONS ·Low frequency power amplifier ·Power regulator


    Original     		PDF 2SC1173 O-220 2SA473 2SC1173 2sc1173 equivalent Silicon NPN Power Transistors 2SA473 2sc1173 equivalent

    2SC1173

    Abstract: 2SA473 2sa473 transistor transistor 2sa473 Transistor 2sC1173
    Text: 2SA473 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SC1173 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		PDF 2SA473 O-220 2SC1173 2SC1173 2SA473 2sa473 transistor transistor 2sa473 Transistor 2sC1173

    2sa467

    Abstract: 2SA431 2SA416 2SA422 2SA476 2SA468 2SA440 2SA401 2SA458 2SA417
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) PartNumber VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob ºñ°í (V) (V) (mA) (mW) (ºC) VCE(V) Ic(mA) (MHz) (pF) 2SA401 -30 -0.5 -40 130 85 30 3 2SA402 -35 -100 250 175 200 -6


    Original     		PDF 2SA401 2SA402 2SA403 2SA404 2SA405 2SA406 2SA407 2SA408 2SA409 2SA410 2sa467 2SA431 2SA416 2SA422 2SA476 2SA468 2SA440 2SA401 2SA458 2SA417

    2SC1124

    Abstract: 2SC1177 2SC1137 2SC1145 2SC1116A 2SC1130 2sc1127 2SC1147 2sc1186 2SC1111
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC1101 1100 5 1A 50W(Tc=25ºC) 150 60 15 500 2SC1102 300 7 100 11W(Tc=25ºC) 150


    Original     		PDF 2SC1101 2SC1102 2SC1103 2SC1103A 2SC1104 2SC1105 2SC1106 2SC1107 2SC1108 2SC1109 2SC1124 2SC1177 2SC1137 2SC1145 2SC1116A 2SC1130 2sc1127 2SC1147 2sc1186 2SC1111

    2SA473

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA473 POWER AMPLIFIER APPLICATIONS. CAR ''^1? AMD CAR STEREO OUTPUT STAGE APPLICATIONS FEATURES : . Good Linearity of tvpj?. . Complementary to 2SC1173- MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage SYMBOL RATING


    OCR Scan     		PDF 2SA473 2SC1173- -10mA, 2SA473

    2sc1173

    Abstract: 2SA473
    Text: SILICON NPN EPITAXIAL TYPE 2SC1173 U n i t 10.3 MAX. POWER AMPLIFIER APPLICATIONS, i tí m m 0 3 .6 ± 0 .2 CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpE• Complementary to 2SA473 and 5 Watts Output Applications.


    OCR Scan     		PDF 2SC1173 2SA473 O-220AE Ic-10mA, 2sc1173

    2SA554

    Abstract: 2sa584 2SA553 2SA564 2SA429GTM 2sa525 2SA552 2SA639S 2SC519A 2SC520A
    Text: 1A m % fö <Ta=25^,*EPiäTc=25t; m 2 SA 119 2SA429GTM 2SA473 2SA503 2SA504 2SA510 2SA512 2SA524 2SA553 2SA554 2SA558 2SA559 2SA559A 2SA562TM 2SA564 2SA564A 2SA580 2SA594 2SA6QSKNP 2SA608NP 2SA608SPA 2SA625 2SA638S 2SA639S 2SA656A 2SA657A 2SA658A 2SA6Î3 2SA673A


    OCR Scan     		PDF SA119 2SA429GTM 2SA473 2SA503 2SA504 2SA510 -1SA625 O-92JFÃ 2SA638S T0-92JB 2SA554 2sa584 2SA553 2SA564 2sa525 2SA552 2SA639S 2SC519A 2SC520A

    2SA473

    Abstract: 2SC1173 2SA473 O
    Text: AOK AOK Semiconductor Product Specification 2SA473 S ilicon PNP Power Transistors DESCRIPTION • W ith T 0 2 2 0 package • C om plem ent to type 2SC1173 • C ollector current :IC=-3A • C ollector dissipation:Pc =10W @ Tc=25‘C APPLICATIONS • Low frequency pow er am plifier


    OCR Scan     		PDF 2SA473 T0220 2SC1173 2SC1173 2SA473 O

    2s8698

    Abstract: 2SA634A 2sa1015 2sB1064 2SA715 2SA836 2SA970 2SA854 2S8834 2SA1039
    Text: 10 - s « Type No. *t * 2SA 635 * 2SA 636 * 2SA 636A < s a a a a * 2SA 637 «5 T 2SA 638 B 2SA 638S nr 03 2SA a « * 2 SA 633 * 2SA 634 ^ 2SA 639S £ H Manuf. a a a a a 2SA 640 ^ 0 a * 2SA 641 .✓ * 2SA 642 - * 2 SA 643 - 0 « a a s a * 2SA 644 M TO S H I B A


    OCR Scan     		PDF 2SB632 2SA715 2SA699 2SB1064 2SB632 2SA473 2SB631 2s8698 2SA634A 2sa1015 2sB1064 2SA715 2SA836 2SA970 2SA854 2S8834 2SA1039

    2SA934

    Abstract: 2sa933 2sa726 2sa999 2SA1005 2SA1115 2sb849 2SA999L 2SA715 2SB1314
    Text: - 12 - s « Type No. tt S a 2 SA 7 1 2 2 SA 7 1 3 r0 < 2 SA 7 1 5 2 SA 7 1 7 B h •>- s 2S A 719 , , fé 2 SA 7 2 0 , fé 2S A 7 2 0 A ♦2 2 SA 7 2 1 _ fé 2S A 7 2 2 — fé 2 SA 7 2 3 2S A 7 2 4 2 SA 72 5 2S A 728 - 2 SA 7 2 8 2SA 730 y ' 2SA 731 2SA 732 ✓


    OCR Scan     		PDF 2SA1768 2SA830 2SB849 2SB946 2SB1142 2SA473 2SB772 2SA699 2SB1314 2SB1009 2SA934 2sa933 2sa726 2sa999 2SA1005 2SA1115 2sb849 2SA999L 2SA715

    2SD525

    Abstract: No abstract text available
    Text: -3 7 TO-22QAB P A CK A G E S E R IE S O 1X1 TO-220AB X M OD 3> r*n W M ! H ri ' Application IC Type No. NPN T V Chroma Out O W *MAX. X v CE0 h'Ft; PC v C B 0 TcpS B ’C PNP <A) (V) 2SC1569 (W) f-pTYP. v CE(sat) M A X . V CE >c (V) (AJ •c •b <V) (A)


    OCR Scan     		PDF O-22QAB O-220AB 2SC1569 2SD525 2SB596 2SB595 BU407D 2SD1069 10MIN. 2SD525

    2SC789

    Abstract: 2sc1060 2SC1061 250314 2SD331 2SA473 2SA489 2SA490 2SA670 2SA671
    Text: TYPE NO. P O L A R IT Y Pow er Transistors CASE M A X IM U M r a t in g s 'c pd IW A) V CEO (V) V C E (S A T ) h fe min max 'c (A) VCE (V) max 'c (V) (A) fT min COM PLE­ (M Hz) TYPE 2SC789 2SC790 2SC1060 2SC1061 2 S C 1 17 3 2SC1626 N N N N N N T O -22 0


    OCR Scan     		PDF 2SC789 O-220 2SA489 2SC790 2SA490 2SC1060 2SA670 2SC1061 250314 2SD331 2SA473 2SA489 2SA490 2SA670 2SA671

    2sb526

    Abstract: 2sc1060 2SC789 2SD359 2SA816 2SB529 2SD331 2SD365 2SB513A 2SB514
    Text: Power Transistors TYPE POLA­ NO. RITY P Pd IC VCEO mW (A) (V) 25 20 3 2 20 10 10 min max 80 50 30 40 2 2 0.8 50 20 80 40 55 55 160 320 320 300 300 10 40* 30 25 25 2 2 20 60 60 40 50 55 60 40 40 35 300 200 240 240 320 35 40 70 40 40 320 400 240 240 2SB 513A


    OCR Scan     		PDF 2SB513A 2SB514 2SB515 2SB523 2SB526 2SB529 2SB566A 2SC789 2SC790 2SC1060 2SD359 2SA816 2SD331 2SD365

    2n6125

    Abstract: No abstract text available
    Text: Power Transistors TYPE POLA­ NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E ­ IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100


    OCR Scan     		PDF MH8100 MH8106 MH8108 MH8700 MH0810 MH0816 MH0818 2n6125

    2sa1015

    Abstract: 2SA933 2SA733 2SA620 2SA429 2SB558 Nec b 616 2SA1090 2SB596 2SA673
    Text: m Type * € tt € No. Manuf. SANYO 2SA 580 * ± « 2SA984 * 2SA 581 « ± a 2SA1450 * 2SA 594 — s s * * 2SA 597 s s 3K TOSHIBA m B NEC B ÍI HITACHI 2SA673 fâ T MATSUSHITA 2SA1096 2SA1283 — A ROHM 2SA935 2SA935 2SA933 2SA748 2SB1043 2SA1399 2SA 603


    OCR Scan     		PDF 2SA984 2SA673 2SA1096 2SA1283 2SA935 2SA1450 2SA1096 2SA1015 2sa1015 2SA933 2SA733 2SA620 2SA429 2SB558 Nec b 616 2SA1090 2SB596 2SA673

    2SB512P

    Abstract: tip318 TIP31N TIP308 MH0870 TIP298 2sb435 2sc1060 MH8106 MH8500
    Text: TYPE NO. P O L A R ITY Power Transistors M A X IM U M R A TIN G S Pd 'c W A) V C E(SA T) h fe V CEO (V) 'c min max (A) V CE (V) 1 0.5 0.2 0.2 1 1 max 'c fT min (V) (A) 2 2 2 2 2 2 0.8 0.8 0.5 0.5 1.2 0.8 2 2 0.5 0.5 3 2 5 30 50 50 5 5 (MHz) COMPLE­ M ENTARY


    OCR Scan     		PDF MH0870 O-220 MH8700 MH8100 O-22C MH0810 MH8106 MH0816 H8108 2SB512P tip318 TIP31N TIP308 TIP298 2sb435 2sc1060 MH8500

    2sd331

    Abstract: 2sc1061
    Text: Power Transistors TYPE POLA­ CASE NO. RITY MAXIMUM RATINGS P* VcEO Ic W (A) (V) Hre min max Ic (A) VCE (V) VcE(«ag max (V) Ic (A) fT COMPLE­ min MENTARY (MHz) TYPE . 2SD366 2SD366A 2SD330 2SD331 2SB513 2SB513A 2SB514 2SB515 2SB523 P P P P P TO-220 TO-220


    OCR Scan     		PDF 2SB513 2SB513A 2SB514 2SB515 2SB523 2SB526 2SB529 2SB566AK 2SC789 2SC790 2sd331 2sc1061

    2SC1173

    Abstract: Transistor 2sC1173 2SC 1173 2SC1173-0 IC0003 2SA473 AC75 Produced by Perfect Crystal Device Technology 2SC1173-Y
    Text: ^ 2 s c 1173 i/U D > N P N X ^ á F 2 /? ;U h ^ > 5 ;^ P C T S a : ^ I L IC O N NPN EPITAXIAL o « * « « « o P o w e r Ampl i f i e r A p p l i cations o Output Stage Application of Car Radio and Stereo TRANSISTOR 2 B A 4 73 <n =. V -7 V ^ y 9 V X-


    OCR Scan     		PDF 2sc1173 2SA473 T0-220AB 10AIA ftAC75 0/25j 100x100x2ml 50xs0x2mm 2SC1173 Transistor 2sC1173 2SC 1173 2SC1173-0 IC0003 AC75 Produced by Perfect Crystal Device Technology 2SC1173-Y

    2SA473

    Abstract: LEA-5A 2sa473-0 transistor 2sa473 2SA amplifier lineal 2SC1173 Produced by Perfect Crystal Device Technology transistor 2SA
    Text: 473 2SA * zj'j3ypNPT£9*ì;j>}bB^= ?yvz5> pcTm ^SILIC ON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) mm o * O ii- 7 * o o Power A m p l if i e r A p p l i c a t i o n s O u tp u t S t a g e A p p l i c a t i o n o f C ar R a d io an d C ar S t e r e o Z SC 1173


    OCR Scan     		PDF 2sa473 ZSC1173 2SC1173 00MM3N 100X100X2 2SA473 LEA-5A 2sa473-0 transistor 2sa473 2SA amplifier lineal 2SC1173 Produced by Perfect Crystal Device Technology transistor 2SA