2SA20
Abstract: 2SA2047 2SC5729 T106
Text: 2SA2047 Transistor Medium power transistor −30V, −0.5A 2SA2047 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) 2.1 (1)Emitter (2)Base (3)Collector 0.1Min. 0.2 1.25 0.15 !Features 1) High speed switching. (Tf : Typ. : 40ns at IC = −500mA)
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2SA2047
-500mA)
-150mV
-100A,
-100mA)
2SC5729
2SA20
2SA2047
2SC5729
T106
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PDF
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2SA2047
Abstract: 2SC5729 T106
Text: 2SA2047 Transistor Medium power transistor −30V, −0.5A 2SA2047 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) 2.1 (1)Emitter (2)Base (3)Collector 0.1Min. 0.2 1.25 0.15 !Features 1) High speed switching. (Tf : Typ. : 40ns at IC = −500mA)
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Original
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2SA2047
-500mA)
-150mV
-100A,
-100mA)
2SC5729
2SA2047
2SC5729
T106
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC5729 Transistor Medium power transistor 30V, 0.5A 2SC5729 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)
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2SC5729
500mA)
150mV
100mA,
2SA2047
2SC5729
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PDF
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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PDF
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2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
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O-220FM
47P4869E
2SA2160
2SA2149
2SC6005
RQW200
rdx100n45
RQA200N03
rqw200n03
RLA130N03
rdx*100n45
2sc6027
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PDF
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2sc5922
Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability
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200mW
500mW
15Min.
85Max.
15Max.
2sc5922
2SC5734
2SC5917
2SC5989
2SA2054
2sc5919
2SC5987
2SC5734K
2SC5918
2SC5982
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PDF
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S78DM12Q
Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power
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SN431)
SUN0550F/D
O-220AB-3L
O-220F-3L
O-220F-4SL
DIP-14
DIP-20
DIP-18
S78DM12Q
Sf20d400
s78dM12
BA5810
sn7905
SF5A400
transistor AE code PNP smd
sf20a300
SF10A300
SF10D300
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2SA20
Abstract: 2SA2047 2SC5729 T106
Text: 2SC5729 Transistor Medium power transistor 30V, 0.5A 2SC5729 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)
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Original
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2SC5729
500mA)
150mV
100mA,
2SA2047
2SA20
2SA2047
2SC5729
T106
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PDF
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2SA2047
Abstract: 2SC5729 T106
Text: 2SC5729 Transistor Medium power transistor 30V, 0.5A 2SC5729 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 zExternal dimensions (Units : mm) zFeatures 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)
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Original
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2SC5729
500mA)
150mV
100mA,
2SA2047
2SA2047
2SC5729
T106
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PDF
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