Untitled
Abstract: No abstract text available
Text: ST 2SA1664U PNP Epitaxial Planar Transistor High Current Application The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 35
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2SA1664U
OT-89
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2SA1664
Abstract: No abstract text available
Text: ST 2SA1664 PNP Epitaxial Planar Transistor High Current Application The transistor is subdivided into two groups, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings Ta=25oC
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2SA1664
100mA
700mA
500mA
2SA1664
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2SA1664
Abstract: No abstract text available
Text: Transistors SMD Type PNP Transistor 2SA1664 Features Collector current IC=-0.8A Power dissipation PC=0.5W Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage
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2SA1664
-10mA
2SA1664
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Untitled
Abstract: No abstract text available
Text: 2SA1664 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)0.8 Absolute Max. Power Diss. (W)1.0# Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)500m
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2SA1664
Freq120MÃ
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Untitled
Abstract: No abstract text available
Text: Product specification 2SA1664 Features Collector current IC=-0.8A Power dissipation PC=0.5W Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V
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2SA1664
-10mA
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2SA1664
Abstract: sot marking RY
Text: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SA1664 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current : -0.8 A ICM Collector-base voltage V V(BR)CBO : -35
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OT-89
2SA1664
OT-89
-10mA,
-100mA
-700mA
-500mA,
-20mA
-10mA
2SA1664
sot marking RY
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SOT 89 RY
Abstract: 2SA1664 sot89 marking RY sot89 "TRANSISTOR"
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1664 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current : -0.8 A ICM Collector-base voltage
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OT-89
2SA1664
OT-89
-10mA,
-100mA
-700mA
-500mA,
-20mA
-10mA
SOT 89 RY
2SA1664
sot89 marking RY
sot89 "TRANSISTOR"
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2SA1664
Abstract: sot marking RY
Text: 2SA1664 2SA1664 TRANSISTOR PNP SOT-89 FEATURES Power dissipation PCM : 0.5 1. BASE W (Tamb=25℃) 2. COLLECTOR 1 2 Collector current ICM : -0.8 A Collector-base voltage V V(BR)CBO : -35 Operating and storage junction temperature range 3. EMITTER 3 TJ, Tstg: -55℃ to +150℃
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2SA1664
OT-89
-10mA,
-100mA
-700mA
-500mA,
-20mA
-10mA
2SA1664
sot marking RY
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1664 TRANSISTOR PNP 1. BASE FEATURES z Small Flat Package z High Current Application z High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-89-3L
OT-89-3L
2SA1664
-10mA
-100mA
-700mA
-500mA
-20mA
-10mA
-10mA,
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Untitled
Abstract: No abstract text available
Text: ST 2SA1664U PNP Epitaxial Planar Transistor High Current Application The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 35
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2SA1664U
OT-89
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3
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SC-59
SGSR809-A
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
SMBJ11CA
SM4005A
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
BZV55C6V2
BZV55C12
SMBJ13CA
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bq 8050
Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
Text: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管
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OD-123
OD-123
OD-323
OD-323
OD-523
OD-523
OT-23
OT-23
OT-323
OT-323
bq 8050
HF S4 13003
F6 13003
bL78L05
HF 13003
bq d882
2SC945
KJG BAV99
WG 13003
2SC945 AQ
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2SC3875S
Abstract: BC547 BC546 2Sc4370a 2SC3227 2sa1274 2SA1267 2SC3201 BC557 bc556 2sa1659a bc557
Text: This Transistors Electrical Characteristics T a=25°C Applications VCEO fT (TYP) MIN (TYP) MAX VCE f ratnage Its Respective (mA) (mW) (V) (mA) (MHz) (V) (dB) (V) (KHz) 50 150 150 70^700 6 2 0.25 100 10 80 10 1 10 6 0.1 1 10 SOT-23 H 2SA1269 120 100 200
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Ta-25
2SC3875S
2SA1S04S
OT-23
2SC3201
2SA1269
O-92M
2SC3199
2SA1267
BC547 BC546
2Sc4370a
2SC3227
2sa1274
BC557 bc556
2sa1659a
bc557
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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2SC4370A
Abstract: 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 2SA1267 bc557 2SA1504 BC337/BC327 2SC3202
Text: 1 Transistors Maximum Ratings KOREA Electrical Characteristics Ta—25°C Type No NPN PNP Ic Pc (V) (mA) (mW) 150 I’fe MAX ^CE (V) Ic (mA) (V) 7 0^700 6 2 0.25 100 fT I« (mA) (MHz) (TYP) MIN ^CE (V) NF IC (mA) (TYP) MAX (dB) VCE (V) •c (mA) f (KHz)
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2SC387SS
2SA1S04S
OT-23
2SC3201
2SA1269
O-92M
2SC3199
2SA1267
2SC3198A
2SC4370A
2SC3875S
2SA1504S
2SC3227
BC548 ,BC558
bc557
2SA1504
BC337/BC327
2SC3202
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