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    2SA1200 Price and Stock

    3M Interconnect 1U30A-MB2-SA1-200-CE

    USB3 VISON INDUSTRIAL CAMERA CAB
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    DigiKey 1U30A-MB2-SA1-200-CE Bulk 31 1
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    3M Interconnect 1U30G-MB2-SA1-200

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    DigiKey 1U30G-MB2-SA1-200 Bulk 21 1
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    Avnet Americas 1U30G-MB2-SA1-200 Bulk 25 19 Weeks, 1 Days 5
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    3M Interconnect 1U30A-MB2-SA1-200

    USB3 VISION INDUSTRIAL CAMERA
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    DigiKey 1U30A-MB2-SA1-200 Bulk 19 1
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    3M Interconnect 1U30S-MB2-SA1-200

    USB3 CABLE ASSEMBLY 2 METER
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    DigiKey 1U30S-MB2-SA1-200 Box 2 1
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    Mouser Electronics 1U30S-MB2-SA1-200 38
    • 1 $58.78
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    3M 1U30S-MB2-SA1-200 (ALTERNATE: 04550309218423)

    Cable, Plug to Plug, USB micro B to USB Standard A, Black, 2 Meters | 3M 1U30S-MB2-SA1-200
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    RS 1U30S-MB2-SA1-200 (ALTERNATE: 04550309218423) Bulk 106 Weeks 25
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    2SA1200 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1200 Kexin High Voltage Switching Applications Original PDF
    2SA1200 Toshiba PNP transistor Original PDF
    2SA1200 Toshiba TRANS GP BJT PNP 150V 0.05A 3(2-5K1A) Original PDF
    2SA1200 TY Semiconductor High Voltage Switching Applications - SOT-89 Original PDF
    2SA1200 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1200 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1200 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1200 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1200 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1200 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1200 Toshiba SOT-89 Transistors Scan PDF
    2SA1200 Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) Scan PDF
    2SA1200 Toshiba Silicon PNP transistor for high voltage switching applications Scan PDF
    2SA1200O Toshiba TRANS GP BJT PNP 150V 0.05A 3(2-5K1A) Original PDF
    2SA1200Y Toshiba TRANS GP BJT PNP 150V 0.05A 3(2-5K1A) Original PDF

    2SA1200 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SA1200

    Abstract: 2SC2880
    Text: 2SA1200 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1200 High Voltage Switching Applications • High voltage: VCEO = −150 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate)


    Original     		2SA1200 2SC2880 2SA1200 2SC2880 PDF

    2SA1200

    Abstract: 2SC2880
    Text: 2SA1200 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1200 High Voltage Switching Applications • High voltage: VCEO = −150 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on ceramic substrate)


    Original     		2SA1200 2SC2880 2SA1200 2SC2880 PDF

    2SA1200

    Abstract: smd marking Y 2SC2880 SMD B100
    Text: Transistors SMD Type High Voltage Switching Applications 2SA1200 Features High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2880 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage


    Original     		2SA1200 -150V 120MHz 2SC2880 -10mA -30mA 2SA1200 smd marking Y 2SC2880 SMD B100 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1200 Features High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2880 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO


    Original     		2SA1200 -150V 120MHz 2SC2880 -30mA -10mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1200 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1200 High Voltage Switching Applications • High voltage: VCEO = −150 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate)


    Original     		2SA1200 2SC2880 SC-62 PDF

    2SA1281

    Abstract: 2SA1281C 2NS401 2SA949Y 2SA429G 2SA1013-0 C 2N4888 2SA429GTM 2SA429 2SA778AK
    Text: LOW-POWER SILICON PNP Item Number Part Number S 10 >= AST5401 2NS401 S05401 TMPT5401 2SA429 2SA940 2SA778K 2SA949 2SA429G-TM-0 2SA12000 lS 20 2S 30 -40 45 SO ~:dl~~r:C PN4888 PN4888 PN4889 PN4889 PN4889 2N4888 2SA916 2SA916 FairchildSC CentralSemi FairchildSC


    Original     		samsun80 O-206AA O-236 OT-23 O-226AA O-92var O-126 2SA1281 2SA1281C 2NS401 2SA949Y 2SA429G 2SA1013-0 C 2N4888 2SA429GTM 2SA429 2SA778AK PDF

    2SC2880

    Abstract: 2SA1200
    Text: Transistors SMD Type High Voltage Switching Applications 2SC2880 Features High Voltage : VCEO = 150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1200 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage


    Original     		2SC2880 120MHz 2SA1200 2SC2880 2SA1200 PDF

    2SA1200

    Abstract: 2SC2880
    Text: 2SA1200 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1200 High Voltage Switching Applications • High voltage: VCEO = −150 V · High transition frequency: fT = 120 MHz (typ.) · Small flat package · PC = 1 to 2 W (mounted on ceramic substrate)


    Original     		2SA1200 2SC2880 2SA1200 2SC2880 PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


    Original     		2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960 PDF

    S500M

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1200 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 200 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm 1.6MAX. 4.6MAX. High Voltage 1.7MAX. : V q e o - - 150V 0.4 ±0.05 High Transition Frequency : fx = 120MHz (Typ.) P q = 1 ~ 2W (Mounted on Ceramic Substrate)


    OCR Scan     		2SA1200 120MHz 2SC2880 S500M PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 SA1200 DATA SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS (2SA1200) Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • • • High Voltage :V c e O = - 150V High Transition Frequency : fp= 120MHz (Typ.)


    OCR Scan     		SA1200 2SA1200) 120MHz 2SC2880 PDF

    2SA1200

    Abstract: 2SC2880 A1200
    Text: TO SH IBA 2SA1200 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 200 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm 1.6MAX. 4.6MAX. High Voltage 1.7MAX. : V q e o - - 150V 0.4 ±0.05 High Transition Frequency : fx = 120MHz (Typ.)


    OCR Scan     		2SA1200 120MHz 2SC2880 2SA1200 2SC2880 A1200 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1200 HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm FEATURES: 4 .6 M AX. . High Voltage : VcEO=-150V . High Transition Frequency : fx=120MHz . Pc= l ~ 2 W L.6 MA X . 1 .7 MAX . j a = Mounted on Ceramic Substrate . Small Flat Package


    OCR Scan     		2SA1200 -150V 120MHz 2SC2880 45-a05 250mm2x PDF

    2SA1146

    Abstract: 2SB1200 2SB764 2SB793 2SB605 2SB507 2SB744 NEC 2SA874 2SB1185 2SB1576
    Text: - Si % Type No. tt € Manuf. = m SANYO ill TOSHIBA 2 SB 1043 □— A 2SB764 2SB 1044 □— A 2SA1705 2SB 1045 U 2SA1415 2SA1200 2SB 1046 B ±L 2SA1415 2SA1384 2SB 1047 ±L 2SA1415 2SB1200 2SB 1048 i 2SB1126 T 2SA1783 T 2SA1702 2SB 1051 □— A 2SA1338


    OCR Scan     		2SB764 2SA1Q20 2SB605 2SA683 2SA1705 2SB793 2SA1415 2SA1200 2SA1173 2SA1146 2SB1200 2SB793 2SB605 2SB507 2SB744 NEC 2SA874 2SB1185 2SB1576 PDF

    2SA1200

    Abstract: 2SC2880 A1200
    Text: 2SA1200 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 200 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm 1.6MAX. —j- 4.6MAX. High Voltage : V^EO = —150V 1.7MAX. 0.4 + 0.05 High Transition Frequency : frp = 120MHz (Typ.)


    OCR Scan     		2SA1200 --150V 120MHz 2SC2880 2SA1200 2SC2880 A1200 PDF

    Untitled

    Abstract: No abstract text available
    Text: POWER M INI PACKAGE S E R IES ^ ! SOT-89 a.î'VîYw; 'S T T ITT Application Pc * Mounted on ceramic substratq o f 250mmJ x 0.8mm v CEO >C Pc PC* V) (A) (W) (W) 1.5 0.5 1 h FE Type No. NPN PNP f t TYP. v CE(sat) M AX- V CE >C 'c 'b V CE •e (V) Im A l


    OCR Scan     		OT-89 250mmJ 2SC2883 2SC2884 2SC2873 2SC2982 2SA1203 2SA1204 2SA1213 2SA1314 PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2880 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2880 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 1.6MAX. High Voltage : VCEO = 150V High Transition Frequency : fp = 120MHz P q = 0.8—2W (Mounted on Ceramic Substrate)


    OCR Scan     		2SC2880 120MHz 2SA1200 PDF

    2SC3301

    Abstract: 2sa120 2SC2880
    Text: llll Powered by 2 POWER MINI PACKAGE SERIES (S0T-89) ICminer.com Electronic-Library Application Pc * Mounted on ceramic substrat? of 250mma x 0.8mm v CE0 >C Pc PC* (V) (A) (W) (W) hFE Typo No. NPN PNP f-j- TYP. v CE(sat) M A X - V CE ic •c •b V CE >E


    OCR Scan     		2SC2880 2SC3301 2sa120 2SC2880 PDF

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2880 SILICON NPN TRIPLE DFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm 1.6 MAX 4.6M A X. FEATURES: . High Voltage 1.7 MAX. : V c e o =150V m . High Transition Frequency : fT=120MHz - . P c = l ~ 2 W Mounted on Ceramic Substrate . Small Flat Package


    OCR Scan     		2SC2880 120MHz 2SA1200 a45-ao5 250mroz PDF

    en220

    Abstract: DTA143ES 2SA1441 1658 NEC 2sa 1659 RT1P431S 2sa1265n 2SB1188 2SB1371 2SA1659
    Text: - m « Type No. 2SA 1648 . 2SA 1649 " 2SA 1650 , 2SA 165! 2SA 1652 2SA 1653 2SA 1654 -• 2SA 1655 2SA 1656 , 2SA 1657 2SA 1658 2SA 1659 2SA 1660 2SA 1661 2SA 1662 2SA 1663 2SA 1664 2SA 1665 2SA 1666 2SA 1667 • 2SA 1668 2SA 1669 2SA 1670 •" 2SA 1671 ^


    OCR Scan     		2sb1203 2SA1244 2SB933 2SB1204 2SB952 2SB945 2SB1294 2SB1018 2SB946 2SA145Z en220 DTA143ES 2SA1441 1658 NEC 2sa 1659 RT1P431S 2sa1265n 2SB1188 2SB1371 2SA1659 PDF