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    2SA1106 PNP TRANSISTOR Search Results

    2SA1106 PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SA1106 PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1106

    Abstract: 2sc2581 amplifer 2sa110
    Text: Inchange Semiconductor Product Specification 2SA1106 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·High frequency ·Complement to type 2SC2581 APPLICATIONS ·Audio power amplifer applications ·DC-DC converters PINNING PIN DESCRIPTION 1


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    PDF 2SA1106 2SC2581 -25mA -140V; 2SA1106 2sc2581 amplifer 2sa110

    2sa1106

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SA1106 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·High frequency ·High power dissipation APPLICATIONS ·Audio power amplifer applications ·DC-DC converters PINNING PIN DESCRIPTION 1 Base


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    PDF 2SA1106 -25mA -140V; 2sa1106

    2SA1106

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SA1106 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High frequency ・High power dissipation APPLICATIONS ・Audio power amplifer applications ・DC-DC converters PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    PDF 2SA1106 -25mA -140V; 2SA1106

    2SA1106 PNP Transistor

    Abstract: 2sc2581 transistor 2sA1106 2SA1106 2sA1106 transistor transistor 2sc2581
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -140V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Complement to Type 2SC2581 APPLICATIONS ·Designed for audio and general purpose applications.


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    PDF 2SA1106 -140V 2SC2581 -50mA; -140V; 2SA1106 PNP Transistor 2sc2581 transistor 2sA1106 2SA1106 2sA1106 transistor transistor 2sc2581

    transistor 2sc2581

    Abstract: 2sc2581 2SA1106 SC-65
    Text: 2SA1106 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! High Current Capability ! High Power Dissipation ! Complementary to 2SC2581 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    PDF 2SA1106 SC-65 2SC2581 -100V transistor 2sc2581 2sc2581 2SA1106 SC-65

    transistor bI 340

    Abstract: 2SA1106 PNP Transistor 2sc2581 2SA1106 tr/transistor bI 340
    Text: <3zmi- 2ondu<2toi ^P10 duct i, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1106 Silicon PNP Power Transistor ft ^ DESCRIPTION • Collector-Emitter Breakdown Voltage- , v .' VK V(BR)CEo= -140V(Min)


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    PDF 2SA1106 -140V 2SC2581 -50mA; -140V; transistor bI 340 2SA1106 PNP Transistor 2sc2581 2SA1106 tr/transistor bI 340

    Untitled

    Abstract: No abstract text available
    Text: 2SA1106 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)140è V(BR)CBO (V)140 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2SA1106 Freq20M

    transistor 2SB618

    Abstract: 3A/fllnm 80
    Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


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    PDF 2SA733 2SJ74 2SK170 2SJ76 2SK213 2SJ77 2SK214 2SJ103 2SK246 2SJ109 transistor 2SB618 3A/fllnm 80

    2SA1106 SANKEN

    Abstract: TO247s BD141 PNP 2sc1116A sanken 2SA1186 SANKEN BU124 texas SDT7605 2sA747A sanken BU124 2SB705
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE fT ON) Min (Hz) ICBO *ON r Max Max (A) (s) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . -10 -15 20 . .


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    PDF BDX22 TIP33E TIP34E 2SC409 2SC410 2SA1106 2SA747A 2SC2837 2SA1007A 2SC2337A 2SA1106 SANKEN TO247s BD141 PNP 2sc1116A sanken 2SA1186 SANKEN BU124 texas SDT7605 2sA747A sanken BU124 2SB705

    c5287

    Abstract: c4381 c3852a c4138 D2494 c4131 transistor c3835 C4020 TO220 transistor c3856 npn c3852
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


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    PDF n66to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 c5287 c4381 c3852a c4138 D2494 c4131 transistor c3835 C4020 TO220 transistor c3856 npn c3852

    C3679 equivalent

    Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
    Text: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.


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    PDF T01EE0 H1-T01EE0-0107020SB C3679 equivalent transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220

    d2494

    Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


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    PDF n6to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 d2494 c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    c5287 equivalent transistor

    Abstract: transistor d2495 c4131 TRANSISTOR REPLACEMENT GUIDE B1560 equivalent Sanken Power Transistors C3679 equivalent shinetsu G746 C3834 transistor c4468 power transistor equivalent 2SC3854 equivalent
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


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    PDF 2SA1693 2SA1694 2SA1695 2SA1725 2SA1907 2SA1908 2SA1909 2SC3179 2SC3852 2SC4511 c5287 equivalent transistor transistor d2495 c4131 TRANSISTOR REPLACEMENT GUIDE B1560 equivalent Sanken Power Transistors C3679 equivalent shinetsu G746 C3834 transistor c4468 power transistor equivalent 2SC3854 equivalent

    SK 18752

    Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
    Text: Bulletin No O03ED0 (May, 2008) SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,


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    PDF O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751

    2SA1106

    Abstract: No abstract text available
    Text: AOK AOK Semiconductor Product Specification 2SA1106 Silicon PNP P o w er Transistors DESCRIPTIO N • W ith TO -3PN package • High frequency • High power dissipation A P P LIC A T IO N S • A ud io pow er am plifer applications • D C -D C converters


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    PDF 2SA1106 -140V; Vce-12V

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711