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    2n7563

    Abstract: 2N7565 2N764 ISO 3161 JESD22-A101 JESD22-A102
    Text: INCH-POUND MIL-PRF-19500/715 23 February 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, ENCAPSULATED PLASTIC, N-CHANNEL, SILICON, TYPE 2N7563, 2N764, 2N7565, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments


    Original     		PDF MIL-PRF-19500/715 2N7563, 2N764, 2N7565, MIL-PRF-19500. O-247Aertaining 2n7563 2N7565 2N764 ISO 3161 JESD22-A101 JESD22-A102

    2n7465

    Abstract: IRHY7330CMSE 2n7465u3 676c 2n7566 2N7466 irhy7430cmse SMD transistor 23 TO-276 irhy7430
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 March 2008. MIL-PRF-19500/676D 11 December 2007 SUPERSEDING MIL-PRF-19500/676C 22 December 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


    Original     		PDF MIL-PRF-19500/676D MIL-PRF-19500/676C 2N7465T3 2N7466T3 MIL-PRF-19500. 2n7465 IRHY7330CMSE 2n7465u3 676c 2n7566 2N7466 irhy7430cmse SMD transistor 23 TO-276 irhy7430