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    2N7509

    Abstract: transistor 1020 2N7510 FSGJ264 FSGJ160
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 3 January 2009. INCH-POUND MIL-PRF-19500/687B 3 October 2008 SUPERSEDING MIL-PRF-19500/687A 12 July 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND


    Original     		MIL-PRF-19500/687B MIL-PRF-19500/687A 2N7509, 2N7510, 2N7511, MIL-PRF-19500. 2N7509 transistor 1020 2N7510 FSGJ264 FSGJ160 PDF