2N7002E
Abstract: 2N7002EW
Text: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,
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2N7002E
O-236
OT-23)
2N7002Eerature
S-04279--Rev.
16-Jul-01
2N7002E
2N7002EW
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Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123
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2N7000
2N7002
2N7002E
2N7002K
2SJ574
2SK3240
BS170
BSH108
BSS123
BSS138
Siliconix
Siliconix mosfet guide
siliconix VN10KM
Power MOSFET Cross Reference Guide
FDC6323L
fdn5618p
2n7002 siliconix
BS170
equivalent of BS170
VN10KM equivalent
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sot 23 marking code
Abstract: No abstract text available
Text: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3 • • • • Low Threshold: 2 V (typ.)
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2N7002E
2002/95/EC
O-236
OT-23)
11-Mar-11
sot 23 marking code
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2N7002E
Abstract: No abstract text available
Text: SPICE Device Model 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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2N7002E
18-Jul-08
2N7002E
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2N7002E
Abstract: No abstract text available
Text: SPICE Device Model 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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2N7002E
0-to10V
13-Aug-03
2N7002E
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Untitled
Abstract: No abstract text available
Text: 2N7002E Vishay Siliconix N-Channel 60-V MOSFET New Product PRODUCT SUMMARY VDS V rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 250 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,
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2N7002E
O-236
OT-23)
S-60753--Rev.
15-Feb-99
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2N7002E-T1-E3
Abstract: marking code 7e marking 7E SOT-23 Diode 2N7002E 2N7002E-T1-GE3 "MARKING CODE" "7E"
Text: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3 • • • • Low Threshold: 2 V (typ.)
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2N7002E
2002/95/EC
O-236
OT-23)
2N7002E-T1-E3
2N7002E-T1-GE3
11-Mar-11
2N7002E-T1-E3
marking code 7e
marking 7E SOT-23 Diode
2N7002E
2N7002E-T1-GE3
"MARKING CODE" "7E"
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Untitled
Abstract: No abstract text available
Text: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3 • • • • Low Threshold: 2 V (typ.)
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2N7002E
2002/95/EC
O-236
OT-23)
2N7002E-T1-E3
2N7002E-T1-GEelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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marking 2N7002E-T1-E3
Abstract: sot 23 marking code 7e 2N7002E siliconix 2N7002E-T1-E3
Text: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3 • • • • Low Threshold: 2 V (typ.)
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2N7002E
2002/95/EC
O-236
OT-23)
18-Jul-08
marking 2N7002E-T1-E3
sot 23 marking code 7e
2N7002E siliconix
2N7002E-T1-E3
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marking 7E SOT-23 Diode
Abstract: marking code vishay SILICONIX sot-23
Text: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3 • • • • Low Threshold: 2 V (typ.)
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2N7002E
2002/95/EC
O-236
OT-23)
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
marking 7E SOT-23 Diode
marking code vishay SILICONIX sot-23
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2N7002E-T1-E3
Abstract: 2N7002E-T1-GE3 2N7002E marking 2N7002E-T1-E3
Text: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Available • Low On-Resistance: 3 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF
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2N7002E
O-236
OT-23)
2N7002E-T1-E3
18-Jul-08
2N7002E-T1-E3
2N7002E-T1-GE3
2N7002E
marking 2N7002E-T1-E3
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2N7002E
Abstract: 2N7002E-T1
Text: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage
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2N7002E
O-236
OT-23)
08-Apr-05
2N7002E
2N7002E-T1
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2N7002EW
Abstract: No abstract text available
Text: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage
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2N7002E
O-236
OT-23)
2N7002E
18-Jul-08
2N7002EW
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2N7002E
Abstract: 2N7002E-T1
Text: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage
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2N7002E
O-236
OT-23)
S-31987--Rev.
13-Oct-03
2N7002E
2N7002E-T1
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dale r15f
Abstract: transistor BC 536 24V DC to 5V 1A DC flyback converter C1608X7R1H104KT TDK zener diode 9.1v C2012X7R2A104KT GRM31CR72A105K S0D-80 MELF GLASS Schottky Blue TRANSISTOR BC 448
Text: MIC2196 Power Over Ethernet IEEE 802.3af PD Evaluation Board Non-Isolated General Description The MIC2196 Power Over Ethernet (POE) Powered Device (PD) Evaluation Board is designed to offer a complete IEEE802.3af compliant power solution. The evaluation board includes a low cost POE
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MIC2196
IEEE802
400KHz
M9999-052402
dale r15f
transistor BC 536
24V DC to 5V 1A DC flyback converter
C1608X7R1H104KT TDK
zener diode 9.1v
C2012X7R2A104KT
GRM31CR72A105K
S0D-80
MELF GLASS Schottky Blue
TRANSISTOR BC 448
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zener diode 9.1v
Abstract: DC DC isolated flyback eval board C2012X7R2A104K TDK flyback transformer R250-F Murata GRM32ER72A105KA01L 24V DC to 5V 1A DC flyback converter MIC9130 C1608X7R1H104KT CRCW080510R0FRT1
Text: MIC9130 Power Over Ethernet IEEE 802.3af PD Evaluation Board Isolated General Description The MIC9130 Power Over Ethernet (POE) Powered Device (PD) Evaluation Board is designed to offer a complete IEEE802.3af compliant power solution. The evaluation board includes a low cost POE
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MIC9130
IEEE802
M9999-052402
zener diode 9.1v
DC DC isolated flyback eval board
C2012X7R2A104K
TDK flyback transformer
R250-F
Murata GRM32ER72A105KA01L
24V DC to 5V 1A DC flyback converter
C1608X7R1H104KT
CRCW080510R0FRT1
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25CV100AX
Abstract: grm39f104z25 RK73G1J cm21w5r cm21w5r104k16 j07aa GRM39B GRM39F104Z 25SL22M r033f
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-71104-1E ASSP for Power Supply Applications Evaluation Board MB3887 • DESCRIPTIONS The MB3887 evaluation board is a surface mounted circuit board of a down-conversion circuit for Li-ion battery charge controller. This board is possible to be set from 1 cell to 4 cells, and controls charging voltage and charging
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DS04-71104-1E
MB3887
MB3887
F0305
25CV100AX
grm39f104z25
RK73G1J
cm21w5r
cm21w5r104k16
j07aa
GRM39B
GRM39F104Z
25SL22M
r033f
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25CV100AX
Abstract: MB3887 grm39f104z25 3887 charging IC GRM39B j07aa r033f PMDS R7 DIODE 3887 CHARGING Electrolytic Condenser
Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-71104-1Ea ASSP for Power Supply Applications Evaluation Board MB3887 • DESCRIPTIONS The MB3887 evaluation board is a surface mounted circuit board of a down-conversion circuit for Li-ion battery charge controller. This board is possible to be set from 1 cell to 4 cells, and controls charging voltage and charging
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DS04-71104-1Ea
MB3887
MB3887
25CV100AX
grm39f104z25
3887 charging IC
GRM39B
j07aa
r033f
PMDS R7 DIODE
3887 CHARGING
Electrolytic Condenser
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single phase thyristor controller ic
Abstract: 2 x 20w amplifier Peak and Hold PWM MOSFET Predriver sc70-5 mosfet driver 2N7002-SOT23 NCP1652 NCS2560 dpdt array circuit mosfet ac switch UDFN-8
Text: The information contained in this Quarterly Update represents ON Semiconductor’s current and planned new products. For additional information regarding any of these products, please visit our website at www.onsemi.com. Operational Amplifiers/Comparators
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NCS2001A
NCS2530A
NCS2560
NCS2561
NCS2561A
NCS2563
SOIC-14
SC88-6
SOI75
SGD503-29
single phase thyristor controller ic
2 x 20w amplifier
Peak and Hold PWM MOSFET Predriver
sc70-5 mosfet driver
2N7002-SOT23
NCP1652
NCS2560
dpdt array circuit
mosfet ac switch
UDFN-8
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c3207
Abstract: 20SVP10M c17f FUJITSU mosfet PMDS R7 PMDS R7 DIODE 2N7002 2N7002E C1608CH1H101J CDRH104R-150
Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-71105-1Ea ASSP for Power Supply Applications Evaluation Board MB39A104 • DESCRIPTION The MB39A104 evaluation board is a surface mount circuit board with 2 channels of down conversion circuit.Because output voltage set 5 V and 3.3 V, the current of Max 3 A is supplied from the power-supply voltage between
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DS04-71105-1Ea
MB39A104
MB39A104
c3207
20SVP10M
c17f
FUJITSU mosfet
PMDS R7
PMDS R7 DIODE
2N7002
2N7002E
C1608CH1H101J
CDRH104R-150
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PMDS R7 DIODE
Abstract: C1608JB1H102K Sanyo SMD L1 smd p-ch mosfet RR0816P203D 2L smd transistor C1608JB1H104K MB39A104 RB053L-30 TPC8102
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-71105-1E ASSP for Power Supply Applications Evaluation Board MB39A104 • DESCRIPTION The MB39A104 evaluation board is a surface mount circuit board with 2 channels of down conversion circuit.Because output voltage set 5 V and 3.3 V, the current of Max 3 A is supplied from the power-supply voltage between
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DS04-71105-1E
MB39A104
MB39A104
F0307
PMDS R7 DIODE
C1608JB1H102K
Sanyo SMD
L1 smd p-ch mosfet
RR0816P203D
2L smd transistor
C1608JB1H104K
RB053L-30
TPC8102
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top mark smd A12 5PIN
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A transistor npn c882 zener diode c531 FAIRCHILD AA32 smd diode zener DIODE D49 ALPHA&OMEGA DATE CODE U261 intel g31 motherboard CN17-4
Text: 5 3 2 1 First International Computer,Inc Portable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : DPUA 2. PCI & IRQ & DMA Description : Version : 0.3 3. Block Diagram : D C 4. Nat name Description :
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NO266
RS300M
SB200)
1/16W
top mark smd A12 5PIN
TRANSISTOR SMD CODE PACKAGE SOT89 52 10A
transistor npn c882
zener diode c531
FAIRCHILD AA32 smd diode
zener DIODE D49
ALPHA&OMEGA DATE CODE
U261
intel g31 motherboard
CN17-4
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2N7002E siliconix
Abstract: 2N7002E 2N7002EW WL MARKING CODE VISHAY sot23 marking code WL sot23
Text: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Vds(V) r D S (o n ) ( Q ) l0(mA) 60 3 @ V q s = 10 V 240 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers,
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2N7002E
O-236
OT-23)
2N7002E
S-04279--
16-Jul-01
2N7002E siliconix
2N7002EW
WL MARKING CODE VISHAY
sot23 marking code
WL sot23
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Untitled
Abstract: No abstract text available
Text: _ 2N7002E VISHAY Vishay Siliconix N-Channel 60-V MOSFET New Product PRODUCT SUM M ARY V ds V r DS(on) (-2) lD (mA) 60 3 @ VGS = 10 V 250 FEATU R ES B E N E F IT S A P P L IC A T IO N S • • • • • • • • • •
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2N7002E
O-236
OT-23)
25-Jan-99
2N7002E_
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