DD 127 D TRANSISTOR
Abstract: transistor DD 127 D 2N6880 2N6798 2N6796 2n6796 jantx 2N6796 JANTXV 2N6802 2n6800 2N6798 JANTXV
Text: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These
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2N6796,
2N6798,
2N6800,
2N6802
MIL-PRF-19500/557
2N6798
2N67n
T4-LDS-0047,
DD 127 D TRANSISTOR
transistor DD 127 D
2N6880
2N6796
2n6796 jantx
2N6796 JANTXV
2N6802
2n6800
2N6798 JANTXV
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2N6880
Abstract: 2N6798 JANTXV
Text: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These
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2N6796,
2N6798,
2N6800,
2N6802
MIL-PRF-19500/557
2N6798
T4-LDS-0047,
2N6880
2N6798 JANTXV
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Untitled
Abstract: No abstract text available
Text: 2N6798 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.
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2N6798
O205AF)
11-Oct-02
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JANTX2N6796
Abstract: 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6798 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798
Text: 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, 2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor
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2N6796,
JANTX2N6796
JANTXV2N6796
2N6798,
JANTX2N6798
JANTXV2N6798
2N6800,
JANTX2N6800,
JANTXV2N6800
2N6802,
2N6798
transistor c 557
2N6800
2N6802
JANTX2N6800
JANTX2N6802
JANTXV2N6796
JANTXV2N6798
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6798 2N6798U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
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MIL-PRF-19500/557
2N6798
2N6798U
T4-LDS-0049
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2N6798
Abstract: 2N6798U
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6798 2N6798U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
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MIL-PRF-19500/557
2N6798
2N6798U
10Vdc,
77Vdc
T4-LDS-0049
2N6798
2N6798U
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2N6798
Abstract: 2N6798U
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6798 2N6798U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
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MIL-PRF-19500/557
2N6798
2N6798U
T4-LDS-0049
2N6798
2N6798U
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MOSFET cross-reference
Abstract: 2N6798 557h 2N6796 2N6796U 2N6798U 2N6800 2N6800U 2N6802 2N6802U
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 September 2010. MIL-PRF-19500/557H 24 June 2010 SUPERSEDING MIL-PRF-19500/557G 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
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MIL-PRF-19500/557H
MIL-PRF-19500/557G
2N6796,
2N6796U,
2N6798,
2N6798U,
2N6800,
2N6800U,
2N6802,
2N6802U
MOSFET cross-reference
2N6798
557h
2N6796
2N6796U
2N6798U
2N6800
2N6800U
2N6802
2N6802U
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2N6796
Abstract: 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 2N6802U c 2811 transistor irff130 marking
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 09 March 1998 INCH-POUND MIL-PRF-19500/557F 09 December 1997 SUPERSEDING MIL-S-19500/557E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
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MIL-PRF-19500/557F
MIL-S-19500/557E
2N6796,
2N6796U,
2N6798,
2N6798U,
2N6800,
2N6800U,
2N6802,
2N6802U
2N6796
2N6796U
2N6798
2N6798U
2N6800
2N6800U
2N6802
2N6802U
c 2811 transistor
irff130 marking
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DD 127 D transistor
Abstract: 2n6798u 2N6796U
Text: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These
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2N6796U,
2N6798U,
2N6800U,
2N6802U
MIL-PRF-19500/557
2N6798U
O-205AF
2N6796,
2N67mensions
T4-LDS-0047-1,
DD 127 D transistor
2N6796U
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Untitled
Abstract: No abstract text available
Text: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These
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2N6796U,
2N6798U,
2N6800U,
2N6802U
MIL-PRF-19500/557
2N6798U
O-205AF
T4-LDS-0047-1,
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2N6782 JANTX
Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE
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IRH7054
Oct-96
IRH7150
IRH7250
IRH7450SE
Nov-96
IRH8054
2N6782 JANTX
2N6758 JANTX
2N6756 JANTX
2N6766 JANTX
2N6792 JANTX
2N6796U
60022
2N7236
2n6806 jantx
2N6770 JANTX
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2N6764 JANTX
Abstract: 91447 IR2113L
Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450
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IRH7054
IRH7130
IRH7150
IRH7230
IRH7250
IRH7250SE
IRHF7330SE
IRHF7430SE
IRH7450
IRH7450SE
2N6764 JANTX
91447
IR2113L
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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2n6798 jantx
Abstract: 2N6798 IH0063 2N6756 QPL-19500
Text: Standard Power MOSFETs 2N6798 File Number 1903 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 5.5A, 200V TDSIonl = 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • m m ■ ■ SOA is power-dissipation limited
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2N6798
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2n6798 jantx
IH0063
2N6756
QPL-19500
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Untitled
Abstract: No abstract text available
Text: International sslRectifier Government and Space hexfet power m o sfets Hermetic Package N-Channel Part BV d s s Number V IRFF024 RDS(on) (Ohms) •d @ Tq = 100°C R thJC Max. Pd @ Tc = 25°C Outline (A) (A) (K/W) (W) Number (1) 60 0.15 8.0 IRFF110 100 0.60
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IRFF024
IRFF110
2N6782
JANTX2N6782
JANTXV2N6782
IRFF120
2N6788
JANTX2N6788
JANTXV2N6788
IRFF130
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406J
Abstract: JD 1801 irfc230 IRFC430 IRFC9230 IRFC130 2N6756 IRFC110 2N6847 irfc250
Text: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERHO USE All devices are available screened to TX, TXV, or S Level equivalent. Reference the High-Reliability Screening table for details. Contact your local Representative or STC
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2N6756
2N6758
2N6760
2N6762
2N6768
2N6770
IRFC130
IRFC230
IRFC330
IRFC430
406J
JD 1801
IRFC9230
IRFC110
2N6847
irfc250
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MO-D36AB
Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for
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MIL-S-19500
T0-254AA
T0-204AA/AE
MO-D36AB
IRF9510 SEC
IRF510 SEC
2n6845 jantx
D 10.7 A
IRF540 smd
irf740 STAND FOR
irfm9230
2N7237 JANTXV
BC 542
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UFN540
Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
Text: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State
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U2TA506
U2TA508
U2TA510
861-6S40
UFN540
UFN833
UPT613
UFNF130
UFN451
U2T105
U2T305
TQ-66
ufn432
UFN450
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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IRF1644
Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Text: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.
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100HF20-100HF160.
100JB05L-100JB12L.
10CTF10-10CTF40.
10CTQ140
10D05-10010.
10DF1100F8
10JF1-10JF4.
10JQ030-10JQ100.
1OJTF10-10JTF40
10MQ040-10MQ090.
IRF1644
12CTQ030-12CT0045
10JQ030-10JQ100
IRL0024
31D003-31D010
IRKT210-16
IRF1401
6cw 78
IRF140-143
IRFT003
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Untitled
Abstract: No abstract text available
Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical
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2N6802 JANTX
Abstract: No abstract text available
Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d es c rib e s 19 d ev ic e s , 12 N -C h a n n e l and 7 P -C h a n n e l, all c o n tain e d in the T 0 - 2 0 5 A F T O -3 9 p ac k a g e . This d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical
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I-200
2N6802 JANTX
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PA 0016 PIONEER
Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete
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J-23548
K28742
PA 0016 PIONEER
Pioneer PA 0016
transistors br 6822
MPF104
I9951D
Johnson motor 2 607 022 013
2SK109 equivalent
V01000J
DG5043CK
IRF4431
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