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    Keysight Technologies N6709C

    Racks & Rack Cabinet Accessories Rack Mount Kit for Low-Profile Modular Power System Mainframes
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    2N6709 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6709 Continental Device India 0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - hFE Original PDF
    2N6709 Continental Device India TO-237 Plastic Package Transistors Scan PDF
    2N6709 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N6709 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6709 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6709 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N6709 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6709 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6709 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6709 National Semiconductor PNP Medium Power Transistors Scan PDF
    2N6709 National Semiconductor Medium Power Transistors Scan PDF
    2N6709 National Semiconductor PNP Transistors Scan PDF
    2N6709 National Semiconductor Medium Power Transistors Scan PDF
    2N6709 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF

    2N6709 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-237 Plastic Package 2N6709 PNP SILICON PLANAR EPITAXIAL TRANSISTOR This Device was Designed for General Purpose Medium Power Amplifier.


    Original     		PDF O-237 2N6709 C-120

    TO-237

    Abstract: 2N6709
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6709 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage


    Original     		PDF ISO/TS16949 2N6709 O-237 C-120 TO-237 2N6709

    TO-237

    Abstract: 2N6709
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6709 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC


    Original     		PDF 2N6709 O-237 C-120 TO-237 2N6709

    2N6805

    Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab


    Original     		PDF 2S81188 2S8891 2S8632K SML3552 SML3575 SML3578 SML69501 SML69509 2N6805 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


    Original     		PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910

    1N4548

    Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
    Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A


    Original     		PDF 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    transistor 237

    Abstract: 2N6708 2N6709 2N6710 2N6726 2N6727 2N6728 2N6729 2N6730 2N6732
    Text: TO-237 Plastic Package Transistors PNP Maximum Ratings Type No. 2N6708 2N6709 2N6710 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Y cbo V CEO ^EBO (V) Min (V) Min (V) Min (W) @Tc=25”c (A) 60 45 5 0.75 1.5 80 100 60 80 5 5 0.75 0.75


    OCR Scan     		PDF O-237 2N6708 O-237-1 2N6709 2N6710 2N6726 CIL916LA transistor 237 2N6727 2N6728 2N6729 2N6730 2N6732

    Untitled

    Abstract: No abstract text available
    Text: TO-237 Piastio Package Transistors PNP Maximum Ratings Type No. 2N6708 2N6709 2N6710 Electrical Characteristics (Ta=25”C, U n le ss Otherwise Specified) ^CfiO ^CEO V EB0 (V) Min (V) Min (V) Min PD (W) @Tc=25°c 'c (A) 60 45 5 0.75 1.5 80 100 60 80 5 5


    OCR Scan     		PDF O-237 O-237-1 2N6708 CIL916LA CIL916MA CIL928A CIL928AO

    siemens

    Abstract: MXT2907A philips BD139-BD140 BD139 philips 92PE37B bd139 bd140 BD230 FXT651 BD139
    Text: CENTRE COLLECTOR E LINE CRO SS REFERENCE LISTS THROUGH HOLE CENTRE COLLECTOR Part No. 2N6705 2N6706 2N6707 2N6708 2N6709 2N6710 2N6711 2N6712 2N6713 BC368 BC369 BC635 BC636 BC637 BC638 BC639 BC640 BC875 BC877 BC879 BD135 B 0 136 BD137 BD138 BD139 BD140 BD226


    OCR Scan     		PDF 2N6705 2N6706 2N6707 2N6708 2N6709 2N6710 2N6711 2N6712 2N6713 BC368 siemens MXT2907A philips BD139-BD140 BD139 philips 92PE37B bd139 bd140 BD230 FXT651 BD139

    T1P42C

    Abstract: No abstract text available
    Text: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN


    OCR Scan     		PDF O-220 O-220 O-237-2 00014QÃ T1P42C

    ksd113

    Abstract: NSDU57 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92
    Text: PNP Transistors V cbo V Min v CEO (V) Min Vebo (V) Min 2N4030 TO-39 60 60 5 2N4031 TO-39 80 60 80 60 5 5 50 50 50 50 60 50 TO-39 80 80 5 50 60 also Avail. JA N /T X /V Versions 2N4036 TO-39 90 85 TO-39 60 40 2N4314 TO-39 90 65 7 20 60 10 25 40 30 40 70 100


    OCR Scan     		PDF bS01130 D0B70fll NSD206 O-202 NSDU56 NSDU57 ksd113 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92

    G25CW

    Abstract: CIL10
    Text: cm tq^ pljwsic cr*oc Maxinlum Rfitings Type No. Electrical Characteristics Ta=25”C, Unless Otherwise Specified wCE(SAT) vv BE|S«T) a 'c c* 'c (V) S (V) 0 (mA) (pF) (MHz) (mA) Max Min Max Typ Max Min Typ Max KoH) (ns) Max COIl Case Style 'c ^ceo V EBO


    OCR Scan     		PDF 2N6708 O-237-2 O-237-2 TN4235 TN4236 TN4314 G25CW CIL10

    NSDU51

    Abstract: D43C8 NSD6181 0410 2N4234 2N6726 2N6727 92PU51 92PU51A D41D1
    Text: NATL SEMICOND DISCRETE S5E D • bSG113Q 0G377fl7 5 ■ T '21-0t PNP Medium Power Transistors by Ascending Vceo Part No. Vceo \»l Max (mA/V) V « (sat) (V) Max 150 300 10/1 100/1 100/2 100/2 1A/1 500/1 0.5 0.5 0.5 0.5 0.7 0.7 1000 1A 500 500 1000 1000 TO-237


    OCR Scan     		PDF 0G377fl7 T-21-0t 2N6726 O-237 92PU51 D41D1 O-202 D41D2 NSDU51 D43C8 NSD6181 0410 2N4234 2N6727 92PU51A

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    D43C8

    Abstract: nsd6181 NSDU51
    Text: NATL SEflICOND DISCRETE E2E D • bS D113Q 0037767 5 ■ T-27-0/ PNP Medium Power Transistors by Ascending Vce0 Part No. Max (m A /V) Vce (sat) (V) Max 150 300 10/1 100/1 100/2 100/2 1A/1 500/1 0.5 0.5 0.5 0.5 0.7 0.7 1000 1A 500 500 1000 1000 TO-237 TO-237


    OCR Scan     		PDF D113Q T-27-0/ 2N6726 92PU51 D41D1 D41D2 NSDU51 TN5023 2N4234 2N6727 D43C8 nsd6181

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G