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    2N6710 Search Results

    2N6710 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6710 Continental Device India PNP SILICON PLANAR EPITAXIAL TRANSISTOR Original PDF
    2N6710 Continental Device India TO-237 Plastic Package Transistors Scan PDF
    2N6710 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N6710 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6710 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6710 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N6710 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6710 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6710 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6710 National Semiconductor Medium Power Transistors Scan PDF
    2N6710 National Semiconductor PNP Transistors Scan PDF
    2N6710 National Semiconductor Medium Power Transistors Scan PDF
    2N6710 National Semiconductor Medium Power Transistors Scan PDF
    2N6710 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF

    2N6710 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IT 237

    Abstract: 2N6710
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6710 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage


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    PDF ISO/TS16949 2N6710 O-237 C-120 IT 237 2N6710

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-237 Plastic Package 2N6710 PNP SILICON PLANAR EPITAXIAL TRANSISTOR This Device was Designed for General Purpose Medium Power Amplifier.


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    PDF O-237 2N6710 C-120

    TO-237

    Abstract: 2N6710
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6710 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC


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    PDF 2N6710 O-237 C-120 TO-237 2N6710

    Untitled

    Abstract: No abstract text available
    Text: 2N6710 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)500m


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    PDF 2N6710 Freq50M

    b0348

    Abstract: 2N5333 motorola B0238 SGS-Ates SML3511 NSOU56 2N5322 motorola B0818 MPS-U56 mpsu56
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 SML69503 SML69511 SML69603 SML69611 SML3503 SML3507 SML3511 SML3515 ~b~~~~4 25 30 SOT3554 SOT3554 B0638 SOT3551 SOT3551 SOT3551 SOT3577 SOT3577 ~~:g77 35 40 BLX40 BLX40 SOT69503 SOT69503 SOT69603 SOT69603


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    PDF ZTX751 B0378-25 BSS17 2N5322 NS06180 2N6181 SK3179 SML3551 b0348 2N5333 motorola B0238 SGS-Ates SML3511 NSOU56 2N5322 motorola B0818 MPS-U56 mpsu56

    2N6805

    Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab


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    PDF 2S81188 2S8891 2S8632K SML3552 SML3575 SML3578 SML69501 SML69509 2N6805 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


    Original
    PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910

    1N4548

    Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
    Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A


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    PDF 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428

    nsdu57

    Abstract: TO-237 2N6556 2N5415
    Text: NATL SEMICÔND DISCRETE ESE D • bSG113Q 0D377flfi 7 ■ T-2 7-01 PNP Medium Power Transistors by Ascending Vceo (Continued) H fe @ Ic/V ce Vce (sat) (V) Max Part No. Vceo (V) Min Max (mA/V) 2N4236 2N6710 2N6729 2N6732 92PE77C 92PU56 D41E7 D43C10 D43C11


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    PDF bSG113Q 0D377flfi 2N4236 2N6710 2N6729 2N6732 92PE77C 92PU56 D41E7 D43C10 nsdu57 TO-237 2N6556 2N5415

    NSDU57

    Abstract: NSD206 T0202 power 22E 2N4236 2N6710 2N6729 2N6732 92PE77C 92PU56
    Text: NATL SEfllCOND DISCRETE E2E D • bSQ113ü 0D377ÖÖ 7 ■ T- 27-ÙI PNP Medium Power Transistors by Ascending Vceo (Continued) Hfe Max Part No. Vceo (V) Min 2N4236 2N6710 2N6729 2N6732 92PE77C 92PU56 D41E7 D43C10 D43C11 D43C12 NSD204 NSD205 NSDU56 TN4033


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    PDF bSQ113Ã 0D377Ã 2N4236 2N6710 2N6729 2N6732 92PE77C 92PU56 D41E7 D43C10 NSDU57 NSD206 T0202 power 22E

    transistor 237

    Abstract: 2N6708 2N6709 2N6710 2N6726 2N6727 2N6728 2N6729 2N6730 2N6732
    Text: TO-237 Plastic Package Transistors PNP Maximum Ratings Type No. 2N6708 2N6709 2N6710 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Y cbo V CEO ^EBO (V) Min (V) Min (V) Min (W) @Tc=25”c (A) 60 45 5 0.75 1.5 80 100 60 80 5 5 0.75 0.75


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    PDF O-237 2N6708 O-237-1 2N6709 2N6710 2N6726 CIL916LA transistor 237 2N6727 2N6728 2N6729 2N6730 2N6732

    Untitled

    Abstract: No abstract text available
    Text: TO-237 Piastio Package Transistors PNP Maximum Ratings Type No. 2N6708 2N6709 2N6710 Electrical Characteristics (Ta=25”C, U n le ss Otherwise Specified) ^CfiO ^CEO V EB0 (V) Min (V) Min (V) Min PD (W) @Tc=25°c 'c (A) 60 45 5 0.75 1.5 80 100 60 80 5 5


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    PDF O-237 O-237-1 2N6708 CIL916LA CIL916MA CIL928A CIL928AO

    siemens

    Abstract: MXT2907A philips BD139-BD140 BD139 philips 92PE37B bd139 bd140 BD230 FXT651 BD139
    Text: CENTRE COLLECTOR E LINE CRO SS REFERENCE LISTS THROUGH HOLE CENTRE COLLECTOR Part No. 2N6705 2N6706 2N6707 2N6708 2N6709 2N6710 2N6711 2N6712 2N6713 BC368 BC369 BC635 BC636 BC637 BC638 BC639 BC640 BC875 BC877 BC879 BD135 B 0 136 BD137 BD138 BD139 BD140 BD226


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    PDF 2N6705 2N6706 2N6707 2N6708 2N6709 2N6710 2N6711 2N6712 2N6713 BC368 siemens MXT2907A philips BD139-BD140 BD139 philips 92PE37B bd139 bd140 BD230 FXT651 BD139

    T1P42C

    Abstract: No abstract text available
    Text: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN


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    PDF O-220 O-220 O-237-2 00014QÃ T1P42C

    G25CW

    Abstract: CIL10
    Text: cm tq^ pljwsic cr*oc Maxinlum Rfitings Type No. Electrical Characteristics Ta=25”C, Unless Otherwise Specified wCE(SAT) vv BE|S«T) a 'c c* 'c (V) S (V) 0 (mA) (pF) (MHz) (mA) Max Min Max Typ Max Min Typ Max KoH) (ns) Max COIl Case Style 'c ^ceo V EBO


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    PDF 2N6708 O-237-2 O-237-2 TN4235 TN4236 TN4314 G25CW CIL10

    2N6706

    Abstract: 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713
    Text: TO-237 DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 1,14 12,70 5.DEG MAX 5,33 5,20 4,19 0,55 0,50 0,55 1,40 2,54 - A L L DIM EN SIO N S A R E IN M.M. L L PIN CONFIGURATION AVAILABLE IN TO-237 CDIL Code Style 3 TO-237 PIN 1 PIN 2 PIN 3 Emitter Base


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    PDF O-237 O-237 O-237-1 O-237-2 TN4037 O-237-2 TN4234 2N6706 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713

    2N2907 SOT-23

    Abstract: 1N4004 SOD-123 BC517 "cross reference" BC8488 BAT16-046 1N4148 SOD-323 A BCS59 BC548 sot 2N2907 CROSS BC548 cross reference
    Text: SIEMENS Leaded Devices Cross Reference SMD-Packages SOD-123 SOD-323 SOT-23 SOT143 SOT-323 1N4001 1N4002 1N4003 1N4004 1N40Q1 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 SOT-89 SOT-223 BAW78A BAW78B BAW 78C BAW78D BAW79A BAW79B BAW79C BAW79D BAS78A BAS78B


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    PDF 1N4001 1N4002 1N4003 1N4004 1N40Q1 1N4002 1N4003 1N4004 1N4148 OD-123 2N2907 SOT-23 1N4004 SOD-123 BC517 "cross reference" BC8488 BAT16-046 1N4148 SOD-323 A BCS59 BC548 sot 2N2907 CROSS BC548 cross reference

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


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    PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G