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    2N6428 Search Results

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    2N6428 Price and Stock

    onsemi 2N6428ABU

    TRANS NPN 50V 0.2A TO-92-3
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    DigiKey 2N6428ABU Bulk 10,000
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    onsemi 2N6428ATA

    TRANS NPN 50V 0.2A TO-92-3
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    DigiKey 2N6428ATA Ammo Pack 2,000
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    Central Semiconductor Corp 2N6428-PBFREE

    TRANS NPN 50V 0.2A TO-92
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    DigiKey 2N6428-PBFREE Bulk 5,000
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    Central Semiconductor Corp 2N6428

    Bipolar Transistor NPN Low Noise 200mA 50V 3-Pin TO-92 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N6428)
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    Avnet Americas 2N6428 Box 2,500
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    Central Semiconductor Corp 2N6428 PBFREE

    Transistor GP BJT NPN 50V 200mA 3-Pin TO-92 Box - Boxed Product (Development Kits) (Alt: 2N6428 PBFREE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N6428 PBFREE Box 5,000
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    Mouser Electronics 2N6428 PBFREE 4,761
    • 1 $0.75
    • 10 $0.66
    • 100 $0.45
    • 1000 $0.329
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    2N6428 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6428 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    2N6428 Siemens Cross Reference Guide 1998 Original PDF
    2N6428 Central Semiconductor Leaded Small Signal Transistor General Purpose Scan PDF
    2N6428 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
    2N6428 Micro Electronics Medium Power Amps and Switches Scan PDF
    2N6428 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N6428 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6428 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6428 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6428 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6428 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6428 Samsung Electronics NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
    2N6428 Samsung Electronics NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
    2N6428 Samsung Electronics NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
    2N6428 USHA Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. Scan PDF
    2N6428A Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    2N6428A Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
    2N6428A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6428A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6428A Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N6428 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N6428

    Abstract: as dc hfe nv 2N6428A 2N5088
    Text: 2N6428/6428A 2N6428/6428A Amplifier Transistor • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    2N6428/6428A 625mW 2N5088 2N6428 as dc hfe nv 2N6428A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage


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    2N6428/6428A 625mW 2N5088 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6428A tm NPN Epitaxial Silicon Transistor Features • This device is designed for high gain, general purpose amplifier applications at collector currents from 1uA to 200 mA. TO92 1 2 3 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted


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    2N6428A 2N6428A 2N6428ABU 2N6428ATA PDF

    2N6428A

    Abstract: No abstract text available
    Text: 2N6428A tm NPN Epitaxial Silicon Transistor Features • This device is designed for high gain, general purpose amplifier applications at collector currents from 1uA to 200 mA. TO92 1 2 3 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted


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    2N6428A 2N6428A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage


    Original
    2N6428/6428A 625mW 2N5088 PDF

    BF963

    Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
    Text: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99


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    OD-123 1N4001 1N4002 1N4003 1N4004 1N4148 BF963 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • C ollector-E m itter Voltage: V C e o = 50V • C ollecto r D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage


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    2N6428/6428A z-10K 2N6428 2N6428A 100Hz PDF

    2sc498

    Abstract: 2SC875 2SA503 2sc1175 FT501 2N6428 2SA532 2SA606 2sa708 2N6714
    Text: Medium Power Amplifiers and Switches TYPE NO. RITY HFE MAXIMUM RATINGS POLA­ CASE Pd IC VCEO mW (A) (V) min VCE(sat) fT Cob COMPLE­ min max MENTARY IC VCE max max (mA) (V) (V) (A) (MHz) (PF> TYPE . 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237


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    2N6428 O-92A 2N6714 O-237 2N6726 2N6715 2N6727 2N6716 2sc498 2SC875 2SA503 2sc1175 FT501 2SA532 2SA606 2sa708 PDF

    6428A

    Abstract: 2N6428 2n5088 transistor 2N5088 2N6428A N6428
    Text: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • C ollector-E m itter Voltage: V Ceo= 50V • C ollector Dissipation: P c m a x = 62 5 m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage


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    2N6428/6428A 625mW 2N5088 100nA, 100HA 100mA, N6428 N6428A 100HA 100Hz 6428A 2N6428 2n5088 transistor 2N6428A N6428 PDF

    Usha

    Abstract: 2N6428
    Text: Transistors 2N6428 USHA INDIA LTD AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEo=50V • Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Symbol Rating Unit VcBO VcEO 60 50 6 200 625 150 -5 5 -1 5 0 V V


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    2N6428 625mW 100/jA, 100mA, 100Hz 50Kil. Usha 2N6428 PDF

    2N6428A

    Abstract: No abstract text available
    Text: Transistors 2N6428A USHA INDIA LTD AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEo=50V • Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Symbol Rating Unit VcBO VcEO 60 50 6 200 625 150 -5 5 -1 5 0 V V


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    2N6428A 625mW 100/jA, 100mA, 100MHz 100Hz 50Ktl, 2N6428A PDF

    2n5088 transistor

    Abstract: 2N5088 2N6428A
    Text: SAMSUNG S EM I CON DU C T CR INC 2N6428A J*4E D | 7^4142 □ 0 D 7 1 £i 3 fc, | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: V c e o = 5 0 V • Collector D issipation: P c m ax =625m W ABSO LUTE MAXIMUM RATINGS (Ta=25°C)


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    1b4l42 G0071T3 2N6428A 625mW 2N5088 T-29-21 100/iA, 100mA, 100MHz 2n5088 transistor PDF

    2N6428

    Abstract: 2n5088 transistor 2N6428A 2N5088
    Text: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V c e o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Symbol Rating Unit Vceo V ceo 60 50 6 200 625 150


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    2N6428/6428A 625mW 2N5088 100mA, 100MHz 10OfiA 100Hz 2N6428 2N6428A 10KHz 2N6428 2n5088 transistor 2N6428A PDF

    2n5088 transistor

    Abstract: 462 transistor 2N5088 2N6428 VCE-5V, VBE-5v
    Text: IME D I 7^1,4142 0 0 0 7 1 ^ SAMS UN G SE MICOND UCTOR INC 4 | NPN EPITAXIAL SILICON TRANSISTOR 2N6428 AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: Veto =50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic


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    2N6428 625mW 2N5088 10/iA, 100mA, 100MHz 100Hz 10KHz 500ii, 2n5088 transistor 462 transistor 2N6428 VCE-5V, VBE-5v PDF

    2N6428

    Abstract: No abstract text available
    Text: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Coilector-Emitter Voltage: V c e o * 50V • Collector Dissipation: Pc max ” 625mW ABSOLUTE MAXIMUM RATINGS Characteristic (T a» 2 5 1 ;) Rating Unit 60 50 6 200 625 150 -55 -150


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    2N6428/6428A 625mW 2N5088 100mA, 100jA 100Hz 50kfl, 10Hz-10KHz 2N6428 2N6428A PDF

    2N5832

    Abstract: 2n6008
    Text: ALLEGRO MICROSYSTEMS 8514019 INC SPRA G U E. =13 » • 0SD433Ô G 0 G 3 S Ô C1 Ô ■ S E M IC O N D S / I C S 93D 03589 ALGR D T 'ü - 1 - PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C


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    0SD433Ô TP5810 TP5812 TP5814 TP5816 TP5818 TP5820 TP5822 TP5824 TP5825 2N5832 2n6008 PDF

    bc5478

    Abstract: 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd
    Text: SMD w COMPONENT i w i h www.microelectronoc.co.yu i i S M D S E M IC O N D U C T O R S ON M A R K IN G ^ ^ ^ e l e c t r B n ic microe@ptt.yu M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L TY PE M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L


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    BZV49-C10 BZV85-C10 BZV49-C11 BZV85-C11 BZV49-C12 S0T89 BZV85-C12 BZV49-C13 BZV85-C13 bc5478 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd PDF

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


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    06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 PDF

    2N6428A

    Abstract: No abstract text available
    Text: 2 N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR T O -92 • C ollector-E m itter Voltage: VCeo= 50V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage


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    N6428/6428A 2N6428A PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H I L I P S / D I S C R E T E D BSE • T~-2’7~0I bl3S3T31 D O l b n a S ■ Small Signal Devices GENERAL PURPOSE AND SWITCHING TRANSISTORS - NPN TYPES TYPE PKG . bvc eo - te . • ^ /- : *T r >c - i _-iiiln : 2N1613 2N1711 2N1893 2N2218 2N2219


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    bl3S3T31 2N1613 2N1711 2N1893 2N2218 2N2219 2N2219A 2N2221A 2N2222 2N2222A PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    BAV90

    Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
    Text: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17


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    0D12DEÃ BA243 BC146/02 BC849B/C BC338 BC818 BA314 BAS17 BCF32/33 BCX20 BAV90 bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd PDF

    BD53A

    Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
    Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623


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    OT-23 KSC2223 KSC2715 KSC1623 KSC2715 KSC1674 BD53A KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10 PDF

    transistor 13003 AD

    Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)


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    OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v PDF