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    Solid State Inc 2N6341

    TRANS NPN 150V 25A TO3
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    Microchip Technology Inc 2N6341

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    onsemi 2N6341

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    onsemi 2N6341G

    TRANS NPN 150V 25A TO-3
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    Microchip Technology Inc JAN2N6341

    TRANS NPN 150V 25A TO3
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    2N6341 Datasheets (49)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6341 Microsemi NPN Power Silicon Transistor Original PDF
    2N6341 On Semiconductor Silicon NPN Transistor Original PDF
    2N6341 On Semiconductor POWER TRANSISTORS NPN SILICON - Pol=NPN / Pkg=TO3 / Vceo=150 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200 Original PDF
    2N6341 ON Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN 150V 25A TO-3 Original PDF
    2N6341 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6341 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan PDF
    2N6341 API Electronics 25 Amp Transistors Scan PDF
    2N6341 Boca Semiconductor HIGH-POWER NPN SILICON TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=150 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200 Scan PDF
    2N6341 Diode Transistor Transistor Short Form Data Scan PDF
    2N6341 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N6341 Mospec POWER TRANSISTOR(25A,200W) - Pol=NPN / Pkg=TO3 / Vceo=150 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200 Scan PDF
    2N6341 Motorola The European Selection Data Book 1976 Scan PDF
    2N6341 Motorola European Master Selection Guide 1986 Scan PDF
    2N6341 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6341 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6341 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6341 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6341 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6341 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6341 Unknown Shortform Transistor Datasheet Guide Short Form PDF

    2N6341 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6339

    Abstract: 2N6340 2N6338 2N6341 2N6436
    Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION •With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier


    Original     		PDF 2N6338 2N6339 2N6340 2N6341 2N6436 2N6338 2N6339 2N6340 2N6341

    2N6341X

    Abstract: No abstract text available
    Text: 2N6341X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6341X O204AA) 31-Jul-02 2N6341X

    2N3265

    Abstract: 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858
    Text: Device Type 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 VCEO V 90 60 60 80 100 120 140 150 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/55 15.0 1.00 20.0 20/80 15.0 1.60 20.0 20/100 10.0 1.00 15.0 20/100 10.0 1.00 15.0 30/120 10.0 1.00


    Original     		PDF 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858

    equivalent to tip162

    Abstract: 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) — 2N6338


    Original     		PDF 2N6338 2N6339 2N6340 2N6341 2N6436 Continu32 TIP73B TIP74 TIP74A TIP74B equivalent to tip162 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632

    Untitled

    Abstract: No abstract text available
    Text: 2N6341+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)150 V(BR)CBO (V)180 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25


    Original     		PDF 2N6341 Freq40M time300n

    2N6341

    Abstract: 2N6338G 2N6338 2N6341G
    Text: 2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO sus = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341


    Original     		PDF 2N6338, 2N6341 2N6338 2N6341 2N6338/D 2N6338G 2N6338 2N6341G

    2N6339

    Abstract: motorola 2n6338 2N6338 2N6340 20Vdc 1N4933 2N6341 2N6436 2N6338-D
    Text: MOTOROLA Order this document by 2N6338/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage —


    Original     		PDF 2N6338/D 2N6338 2N6339 2N6340 2N6341* 2N6341 2N6436 2N6339 motorola 2n6338 2N6338 2N6340 20Vdc 1N4933 2N6341 2N6338-D

    1N4933

    Abstract: 2N6338 2N6341
    Text: ON Semiconductort High-Power NPN Silicon Transistors 2N6338 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage – VCEO sus = 100 Vdc (Min) – 2N6338


    Original     		PDF 2N6338 2N6341* 2N6341 r14525 2N6338/D 1N4933 2N6338 2N6341

    Untitled

    Abstract: No abstract text available
    Text: 2N6341X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6341X O204AA) 16-Jul-02

    1N4933

    Abstract: 2N6338 2N6341
    Text: ON Semiconductort High−Power NPN Silicon Transistors 2N6338 2N6341* . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO sus = 100 Vdc (Min) − 2N6338


    Original     		PDF 2N6338 2N6341* 2N6341 2N6338/D 1N4933 2N6338 2N6341

    2N6341

    Abstract: 2n6338
    Text: 2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO sus = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341


    Original     		PDF 2N6338, 2N6341 2N6338 2N6338/D 2N6341 2n6338

    2N6436

    Abstract: 2N6437 2N6438 2N6338 2N6341
    Text: SavantIC Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High DC current gain ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6338~2N6341 APPLICATIONS


    Original     		PDF 2N6436 2N6437 2N6438 2N6338 2N6341 2N6436 2N6437 2N6438 2N6341

    2N6437

    Abstract: 2N6438 2N6436 2n6438a 2N6338 2N6341 power transistors
    Text: Inchange Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Fast switching times ・Low collector saturation voltage ・Complement to type 2N6338~2N6341 APPLICATIONS


    Original     		PDF 2N6436 2N6437 2N6438 2N6338 2N6341 2N6436 2N6437 2N643current 2N6438 2n6438a 2N6341 power transistors

    Untitled

    Abstract: No abstract text available
    Text: 2N6341X MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1


    Original     		PDF 2N6341X O204AA) 2N6341X O-204AA

    JANTX 2N6341

    Abstract: ADC 0803 datasheet adc-ic 2N6338 2N6341 all ic data all ic datasheet 1000C 2000C
    Text: TECHNICAL DATA 2N6338 JANTX, JTXV 2N6341 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/509 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


    Original     		PDF 2N6338 2N6341 MIL-PRF-19500/509 1000C 2N6338 2N6341 2000C 87Adc, JANTX 2N6341 ADC 0803 datasheet adc-ic all ic data all ic datasheet 1000C 2000C

    2N5330

    Abstract: 2N5672 2N6258 2N2823 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846
    Text: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts


    OCR Scan     		PDF 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N6273 2N6322 2N6323 2N5330 2N5672 2N6258 2N2824 2N2825 2N3771 2N3846

    2N2820

    Abstract: 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340
    Text: "i T _ 0043592 A P I ELECTRONICS INC p I ELECTRONICS INC 26C 0 0 2 3 6 “ 7k D 7^.3? Je|WsÍ1mD53iT D | CO LLECTO R CURRENT = 2 5 AMPS NPN TY PE S D evice No C ase v CBO Volts 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 TO -63


    OCR Scan     		PDF 000D53J 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6320 2N6339 2N6340

    2N6341

    Abstract: 2N6338 2N6339 2N6340 High-Power NPN Silicon Power Transistor
    Text: HIGH-POWER NPN SILICON TRANSISTORS NPN 2N6338 2N6339 2N6340 2N6341 . designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=30-120 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage


    OCR Scan     		PDF 2N6436-38 2N6338 2N6339 2N6340 2N6341 10MHz) High-Power NPN Silicon Power Transistor

    2N5330

    Abstract: No abstract text available
    Text: 18 u J j i Ê ELE C TR O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES D evice No C ase v CBO V olts 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 TO -63 TO-63 TO-3 TO - 3 TO-3 TO-3 150 85 120 140 160 180 hFF v EBO V olts ""OTn" Max VCEO V olts 90 60 100


    OCR Scan     		PDF 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 2N2823 2N2824 2N2825 2N3771 2N5330

    Untitled

    Abstract: No abstract text available
    Text: "73 GENERAL SEMICONDUCTOR DË"| 3=1105^0 -Oüdl'lB'l H | ~ 3918590 GENERAL SE MI CO N DU CT OR . ^ 72C 01939 D " 7 '-3 3~¿><T ik . General Semiconductor Industries, Inc. S q U H R E n COMPANY Typical Device Types: 2N6249-2N6251, 2N6338-2N6341, GSTU30020


    OCR Scan     		PDF 2N6249-2N6251, 2N6338-2N6341, GSTU30020 30nsec 150nsec 1500nsec 280nsec TWX910-950-1942

    2N6583

    Abstract: 2N6736
    Text: -Jfantran Ä TTM , i [continued] STANDARD PART LIST Devices, inc. 2N NUMBER (BIPOLAR CHIP SELECTIONS JEDEC 2N6276 2N6277 2N6278 2N6279 2N6280 CHIP 179 179 179 179 179 JEDEC 2N6341 2N6359 2N6360 2N6371 2N6372 CHIP 144 331 331 345 116 JEDEC 2N6438 2N6469


    OCR Scan     		PDF 2N6276 2N6277 2N6278 2N6279 2N6280 2N6281 2N6314 2N6338 2N6339 2N6340 2N6583 2N6736

    Untitled

    Abstract: No abstract text available
    Text: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts


    OCR Scan     		PDF 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N2824 2N2825 2N3771

    2N2823

    Abstract: 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846 2N6338 2N6339 2N6340
    Text: I - 18 E i l M l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts


    OCR Scan     		PDF 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N6273 2N6322 2N6323 2N2824 2N2825 2N3771 2N3846

    2N6339

    Abstract: 2N6338 2N6340 2N6341
    Text: Æà MOS PEC HIGH-POWER NPN SILICON TRANSISTORS NPN 2N6338 2N6339 2N6340 2N6341 . designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=30-120 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage


    OCR Scan     		PDF 2N6436-38 2N6338 2N6339 2N6340 2N6341 10MHz)