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    2N60 POWER MOSFET Search Results

    2N60 POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    2N60 POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance


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    PDF QW-R502-053

    2N60C

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-C Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF 2N60-C 2N60-C QW-R502-A46 2N60C

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF 2N60-E 2N60-E QW-R502-974.

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-C Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF 2N60-C 2N60-C 2N60L-TA3-T 2N60G-TA3-T 2N60L-TF3-T QW-R502-A46

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


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    PDF QW-R502-053

    2N60G

    Abstract: 2N60 2N60 TO-251 UTC 2N60L TO-220F utc 2n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220 „ DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF O-220 O-220F O-220F1 O-262 O-251 O-252 QW-R502-053 2N60G 2N60 2N60 TO-251 UTC 2N60L TO-220F utc 2n60l

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF QW-R502-053

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF QW-R502-053

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF QW-R502-053

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF QW-R502-053

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  1 1 TO-220F TO-220 DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF O-220F O-220 O-220F1 O-262 O-252 O-251 QW-R502-053

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF 2N60-E 2N60-E QW-R502-974

    2N60E

    Abstract: 600V 2A SOT223 MOSFET N-channel
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF 2N60-E 2N60-E QW-R502-974 2N60E 600V 2A SOT223 MOSFET N-channel

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-CB Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF 2N60-CB 2N60-CB QW-R209-071

    2n60

    Abstract: 2N60G-TN3-R 2N60G UTC2N60 2n60 MOSFEt 2N60 TO-251 UTC
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220 „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    PDF O-220 O-220F O-220F1 O-262 O-251 O-252 QW-R502-053 2n60 2N60G-TN3-R 2N60G UTC2N60 2n60 MOSFEt 2N60 TO-251 UTC

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF QW-R502-053

    2n60

    Abstract: 2N60 TO-251 UTC 2n60 equivalent 2n60 MOSFEt 2N60-TA3-T 2N60L utc 2n60l 2N60-TF3-T 2N60-TM3-T 2N60-TA
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF O-220 QW-R502-053 2n60 2N60 TO-251 UTC 2n60 equivalent 2n60 MOSFEt 2N60-TA3-T 2N60L utc 2n60l 2N60-TF3-T 2N60-TM3-T 2N60-TA

    2n60 MOSFEt

    Abstract: 2n60 2n60 equivalent 2N60 power mosfet 2N60A CHARACTERISTICS DIODE 2n60 2N60B 2n60l 2N60L equivalent UTC 2N60L
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF O-220 O-251 O-220F O-220F1 O-252 QW-R502-053 2n60 MOSFEt 2n60 2n60 equivalent 2N60 power mosfet 2N60A CHARACTERISTICS DIODE 2n60 2N60B 2n60l 2N60L equivalent UTC 2N60L

    2n60

    Abstract: 2N60 TO-252 2n60 MOSFEt ET2N60 ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F
    Text: 2N60 N2 Amps,600Volts N-Channel MOSFET • Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


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    PDF Amps600Volts ET2N60 O-220 O-220F O-251 O-252 O220F 2n60 2N60 TO-252 2n60 MOSFEt ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F

    2n60b

    Abstract: 2N60A
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 TO-220F 1 TO-220F1 FEATURES * RDS ON = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability


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    PDF O-220 O-220F O-220F1 QW-R502-053 2n60b 2N60A

    2N60F

    Abstract: No abstract text available
    Text: 2N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 2 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the


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    PDF O-251) O-252) O-251 O-252 O-252 12-Apr-2011 2N60F

    2N60B

    Abstract: 2N60A 2N60 power mosfet 2N60 TO-251 UTC 2n60 2n60 MOSFEt 2N60G 2N60L equivalent utc 2n60l 2n60 equivalent
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 TO-220F 1 TO-220F1 FEATURES * RDS ON = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability


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    PDF O-220 O-220F O-220F1 QW-R502-053 2N60B 2N60A 2N60 power mosfet 2N60 TO-251 UTC 2n60 2n60 MOSFEt 2N60G 2N60L equivalent utc 2n60l 2n60 equivalent

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF O-220 QW-R502-053

    2n60 MOSFEt

    Abstract: 2n60 to-251 mosfet B2N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2A 600V N-CHANNEL MOSFET 1 TO-251 FEATURES * Typical RDS ON = 3.7Ω @VGS = 10V * Avalanche rugged technology * Low gate charge (typical 9.0 nC) * Low Crss (typical 5.0 pF) * 100% avalanche tested * Excellent switching characteristics


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    PDF O-251 O-252 O-220 O-220F 2N60L 2N60-TA3-0-T 2N60L-TA3-0-T O-220 2N60-TF3-0-T 2N60L-TF3-0-T 2n60 MOSFEt 2n60 to-251 mosfet B2N60