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    2N5551CN Datasheets (1)

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    2N5551CN AUK NPN Silicon Transistor Original PDF

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    2N5551C

    Abstract: 2N5551CN
    Text: 2N5551CN Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) Ordering Information


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    2N5551CN 2N5551C O-92N KSD-T0C061-000 2N5551C 2N5551CN PDF