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    2N5486 NS Search Results

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    2N5486

    Abstract: 2N5484 2N5485 CBVK741B019 MMBF5484 MMBF5485 MMBF5486
    Text: 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G S G S TO-92 SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching


    Original     		2N5484 MMBF5484 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 OT-23 2N5486 2N5485 CBVK741B019 MMBF5485 MMBF5486 PDF

    5485 transistor

    Abstract: DATASHEET OF TRANSISTOR 2N5485 MMBF5484 OF TRANSISTOR 2N5485 2N5485 equivalent 2N5484 2N5485 2N5486 CBVK741B019 MMBF5485
    Text: 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G S G S TO-92 SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching


    Original     		2N5484 MMBF5484 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 OT-23 5485 transistor DATASHEET OF TRANSISTOR 2N5485 OF TRANSISTOR 2N5485 2N5485 equivalent 2N5485 2N5486 CBVK741B019 MMBF5485 PDF

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


    Original     		PDF

    2N3819 equivalent

    Abstract: 2N5247 2N3971 2N4393 2N5640 2n5484 jfet 2N4341 2N5485 2N5640 equivalent 2n5952 equivalent
    Text: P-Channel Power MOSFET’s Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS V ID(ON)(mA) J174 30.00 1.00 85 J175 30.00 .50 125 Operating Temperature: -55 o C to 150oC Part No. RDS(ON)(Ω) Drain-Source Min. On-State


    Original     		150oC 2N4858 2N4858A 2N4393 2N4859 2N4860 2N4860A 2N4861 2N3819 equivalent 2N5247 2N3971 2N4393 2N5640 2n5484 jfet 2N4341 2N5485 2N5640 equivalent 2n5952 equivalent PDF

    FET package TO-71

    Abstract: SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L
    Text: Transistors Siliconix Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) Max (V) tON Max (ns) Ciss Typ (pF) ID Max (A) PD Max (W) –80 –100 –120 –200 –200 –200 –240 5 5 20 20 20 20 10 –4.5 –4.5 –2.4 –2.8 –2.5 –2.4 –2.5 55 55 25


    Original     		O-226AA VP0808L VP1008L TP1220L BSS92 VP2020L TP2020L VP2410L O-206AF 3N164 FET package TO-71 SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L PDF

    2N3904 SOT-23 MARKING CODE

    Abstract: TO226AA Philips TO-92 MARKING CODE BC327 NATIONAL SEMICONDUCTOR AGt marking code nte 2n3904 DALLAS SEMICONDUCTOR 2501 to-226aa BC547C SOT23 NATIONAL SEMICONDUCTOR MARKING CODE sot
    Text: Transistors Manufacturer’s Code Log AGT ANA ADV AVX BNS CRY DLS Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Bourns Crydom Company Dallas Semiconductor EPC FSC FJS GIS HVP IRF INT EPCOS Fairchild Semiconductor Fuji Semiconductor General Semiconductor


    Original     		751B-SO-16) 2N5485 2N5486 O-226AA) 2N3904 SOT-23 MARKING CODE TO226AA Philips TO-92 MARKING CODE BC327 NATIONAL SEMICONDUCTOR AGt marking code nte 2n3904 DALLAS SEMICONDUCTOR 2501 to-226aa BC547C SOT23 NATIONAL SEMICONDUCTOR MARKING CODE sot PDF

    N-Channel JFET FETs

    Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
    Text: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are


    Original     		O-226AA O-220AB MTP6P20E MTP12P10 OT-223) MTP50P03HDL MMFT960T1 FT960 N-Channel JFET FETs Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17 PDF

    JFET TRANSISTOR REPLACEMENT GUIDE j201

    Abstract: J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET
    Text: LLC 2002 Short Form Catalog ANALOG SOLUTIONS: Amplifiers & Buffers Power Management MOSFETs High Speed Lateral & Vertical DMOS Switches & MOSFETs JFETs MOSFET Drivers Custom Solutions Calogic LLC, 237 Whitney Place, Fremont, CA 94539 • http://www.calogic.net


    Original     		OT-23 JFET TRANSISTOR REPLACEMENT GUIDE j201 J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET PDF

    hp2810

    Abstract: LM163 MJE2955 power amplifier circuit HP2-810 LT1010CT MJE3055 equivalent LT1210 as buffer lm10 de transistor MJE3055 LT1010
    Text: LT1010 Fast ±150mA Power Buffer U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1010 is a fast, unity-gain buffer that can increase the output capability of existing IC op amps by more than an order of magnitude. This easy-to-use part makes fast


    Original     		LT1010 150mA 20MHz O-220) LT1206 250mA, 60MHz LT1210 35MHz LT1795 hp2810 LM163 MJE2955 power amplifier circuit HP2-810 LT1010CT MJE3055 equivalent LT1210 as buffer lm10 de transistor MJE3055 LT1010 PDF

    Instruments

    Abstract: AN13F IC 7404 GP ttl ceramic oscillator using 7404 HP-HEMT-6000 precision Sine 1Mhz Wave Generator sinewave-generator of ic 7475 used in fastest finger first ttl 7474 sine wave 7404 ttl inverter photos
    Text: Application Note 13 April 1985 High Speed Comparator Techniques Jim Williams INTRODUCTION Comparators may be the most underrated and underutilized monolithic linear component. This is unfortunate because comparators are one of the most flexible and universally applicable components available. In large


    Original     		2N2369 HP5082-2810 2N3866 2N5160 LT1016 2N2369 an13f AN13-32 Instruments AN13F IC 7404 GP ttl ceramic oscillator using 7404 HP-HEMT-6000 precision Sine 1Mhz Wave Generator sinewave-generator of ic 7475 used in fastest finger first ttl 7474 sine wave 7404 ttl inverter photos PDF

    ISS400

    Abstract: BC857BM3T5G BAS16XV2T1 MPSA42 168 BC237 MMBT2907AM3T5G BC856BM3T5G BC847BPDW1T1 Series 2n3904 409 BC847CPDW1T1
    Text: CHAPTER 4 Index http://onsemi.com 1681 Small−Signal Device Index Device Number Page Device Number Page BAS20LT1 2N3819 43, 53 BAS21DW5T1 2N3903 59 BAS21HT1 49, 174 2N3904 25, 35, 59 BAS21LT1 48, 168, 176 BC213 272 2N3906 25, 35, 65 BAS21SLT1 48, 178 BC237


    Original     		1SS383T1 2N3819 2N3903 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5089 ISS400 BC857BM3T5G BAS16XV2T1 MPSA42 168 BC237 MMBT2907AM3T5G BC856BM3T5G BC847BPDW1T1 Series 2n3904 409 BC847CPDW1T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: LT1010 Fast ±150mA Power Buffer FTEATURES n n n n n n n n n DESCRIPTION 20MHz Bandwidth 75V/µs Slew Rate Drives ±10V Into 75Ω 5mA Quiescent Current Drives Capacitive Loads > 1µF Current and Thermal Limit Operates from Single Supply ≥ 4.5V Very Low Distortion Operation


    Original     		LT1010 150mA 20MHz O-220 LT1206 250mA, 60MHz LT1210 35MHz PDF

    HP2810

    Abstract: ltc1010 ltc1010ct MJE3055 equivalent LT1010 application notes LT1010CT LBWZ 2 way video splitter circuit drawing LTC1010CN8 LT1010
    Text: LT1010 Fast ±150mA Power Buffer FEATURES DESCRIPTION n The LT 1010 is a fast, unity-gain buffer that can increase the output capability of existing IC op amps by more than an order of magnitude. This easy-to-use part makes fast amplifiers less sensitive to capacitive loading and reduces


    Original     		LT1010 150mA 20MHz O-220 O-220 LT1206 250mA, 60MHz 00V/s, HP2810 ltc1010 ltc1010ct MJE3055 equivalent LT1010 application notes LT1010CT LBWZ 2 way video splitter circuit drawing LTC1010CN8 LT1010 PDF

    2N5484-2N5486

    Abstract: 2NS484
    Text: _ N-Channel JFET High Frequency Amplifier CGHOQIC CORPORATION 2N5484-2N5486 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Up to 400MHz Operation • Economy Packaging • Crss <1 .OpF Drain-Gate Voltage . 25V


    OCR Scan     		2N5484-2N5486 400MHz 4432E 2NS484 300jis, 2N5485 2N5486 100MHz 2N5484-2N5486 PDF

    2N5486

    Abstract: BF5484 2n5485 2N5484 transconductance 2N5485
    Text: M IC Ü N D U C T Q R ^ MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 Mark: 6B / 6M / 6H N-Channel RF Amplifier T his device is designed prim arily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.


    OCR Scan     		2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 2N5486 BF5484 transconductance 2N5485 PDF

    SST5484

    Abstract: No abstract text available
    Text: 2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number -0 .3 to - 3 -2 5 3 loss Min mA 1 2N/SST5485 -0 .5 to - 4 -2 5 3.5 4 2N/SST5486 -2 1 0 -6 -2 5 4 8 V G S (off) (V) V (B R )G S S Min (V)


    OCR Scan     		2N/SST5484 2N5484 2N5485 2N5486 2N/SST5485 2N/SST5486 SST5484 SST5485 SST5486 PDF

    2N3819 NATIONAL SEMICONDUCTOR

    Abstract: National 2N3819 2n3819 surface mount 2N5247 MMBFJ304 MMBFJ305 N CHANNEL JFET 2N3819 2N5951 PN4416 2N5246
    Text: bflE D • bSD113D □Q3cm cn 5S7 NSCS NATL SEMICOND DISCRETE TO -52 N Channel DG V p @ V DslB D ¥ GSS Device m (V) Min (V) Min Max 2N3819 25 RelYfsl Re(Yos) (mmho) @ f (nmho) @ f im Ciss Crss (PF) (PF) Max Max Min (MHz) Max (MHz) 8 15 2 1.6 100 NF (dB)@ Rg = 1k


    OCR Scan     		bSD113D D3I14ci, 2N3819 T0-92 2N4416 PN4416 MMBF4416 O-236* 2N5245 2N3819 NATIONAL SEMICONDUCTOR National 2N3819 2n3819 surface mount 2N5247 MMBFJ304 MMBFJ305 N CHANNEL JFET 2N3819 2N5951 2N5246 PDF

    J2N5457

    Abstract: MPF105 MPF103 MPF106 U1897E 2N4303 J2N5458 MPF104 2N4302 mpf102
    Text: National Semiconductors F.E.T.'s-N-Channel Semiconductor General Purpose Amplifiers Epoxy Package REFERENCE TA B LE BVg ss ’BVd g o V (M in) Code E101 M P F1 03 M P F1 04 M P F1 05 M P F1 09 M P F1 10 MPF111 2N3819 2N4302 2N4303 2N 5457 2N5458 2N5459 30


    OCR Scan     		30779x MPF103 30882x MPF104 30783h MPF105 31330f MPF109 31334r MPF110 J2N5457 MPF106 U1897E 2N4303 J2N5458 2N4302 mpf102 PDF

    SMD Code 12W SOT23

    Abstract: 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc
    Text: SMD Transistors SOT-89 Case 1.2W TYPE NO. CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 CXT5551 CXTA14 CXTA42 CXTA64 CXTA92 DESCRIPTION NPN HIGH CURRENT PNP HIGH CURRENT NPN AMPL'SWITCH PNP AMPt/SWITCH NPN HIGH CURRENT NPN AM PL/SWITCH


    OCR Scan     		OT-89 CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 SMD Code 12W SOT23 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc PDF

    PN4360

    Abstract: pn3687
    Text: Junction FETs' RF Amplifiers TO-72 N-Channel CASE TYPE NO. ReH ^OSl R e n ffsl C |SS c rss IF @ @ TO-92 V BR GSS VGS (O ff) (V y •ds >S PIN OUT (mmho) f Qimho) f <PF> (PF) W ) RG=1K 00 MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX . 8.0


    OCR Scan     		2N2608 2N2609 2N3820 2N5020 2N5460 2N5461 2N5462 PN4360 PN4360 pn3687 PDF

    PN4416

    Abstract: BF98 BF991 BF998 BF909WR BF1105WR
    Text: Philips Semiconductors Small-signal field-effect transistors Selection guide N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER PACKAGE ±VDs V •g (mA) •d s s iytsl (mS) ~V(P)GS (V) min - max (mA) Crs (PF) PAGE General purpose analog applications


    OCR Scan     		PMBFJ210 PMBFJ211 PMBFJ212 BF245A BF245B BF245C BF545A BF545B BF545C BF556A PN4416 BF98 BF991 BF998 BF909WR BF1105WR PDF

    2N5458

    Abstract: TP4221
    Text: ALLEGRO MICROSYSTEMS INC blE D • 0504338 0 0 D b 3 f l T b b S * A L G R N-CHANNEL JFETs ■■"T-27'ts T O -9 2 /T O -2 2 6 A A ELECTRICAL CHARACTERISTICS a t TA = 25°C V GSfoff Device Type *gss Limits Max. @ VDS V) <nA) Min. Max. V.BR)GSS Min. Conditions


    OCR Scan     		2N3819 TP3821 TP3822 TP3823 TP3824 TP4091 TP4092 TP4093 TP4117 TP4118 2N5458 TP4221 PDF

    2N4360

    Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
    Text: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.


    OCR Scan     		MFE2001 MFE2C04 MFE2005 MFE2006 MFE2133 MPF102 MPF108 MPF109 MPF111 MPF112 2N4360 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451 PDF

    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


    OCR Scan     		O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet PDF