2N5461 MOTOROLA
Abstract: 2N5460 MOTOROLA 2N5460 2n5462 2N5461
Text: MOTOROLA Order this document by 2N5460/D SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers P–Channel — Depletion 2N5460 thru 2N5462 2 DRAIN 3 GATE 1 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IG f 10 mAdc
|
Original
|
2N5460/D
2N5460
2N5462
226AA)
2N5461 MOTOROLA
2N5460 MOTOROLA
2N5460
2n5462
2N5461
|
PDF
|
2n5462 replacement
Abstract: motorola JFET 2N3819 bf245 equivalent transistor equivalent 2n5551 2N5461 replacement transistor equivalent book 2N5401 BC237 EQUIVALENT TRANSISTOR bc109c 2N2222, 2N2222A J-FET 2N3819
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers P–Channel — Depletion 2N5460 2N5461 2N5462 2 DRAIN 3 GATE 1 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IG f 10 mAdc Total Device Dissipation @ TA = 25°C
|
Original
|
2N5460
2N5461
2N5462
226AA)
V218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2n5462 replacement
motorola JFET 2N3819
bf245 equivalent
transistor equivalent 2n5551
2N5461 replacement
transistor equivalent book 2N5401
BC237
EQUIVALENT TRANSISTOR bc109c
2N2222, 2N2222A
J-FET 2N3819
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s
|
Original
|
2N5460
|
PDF
|
MFQ5460P
Abstract: 2N5460 DS46
Text: MFQ5460P o QUAD DUAL-IN-LINE P-CHANNEL JUNCTION FIELD-EFFECTTRANSISTORS . . . depletion mode Type A junction field-effect transistors signed for use in general-purpose amplifier applications. . de- High Gate-Source Breakdown Voltage — V(BR)GSS = 40 Vdc (Min)
|
Original
|
MFQ5460P
2N5460
MFQ5460P
2N5460
DS46
|
PDF
|
e175 Siliconix
Abstract: E175 fet MMBFJ174 2N5475 u301 siliconix InterFET u301 2N5114 motorola 55T175 2N5798 InterFET
Text: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) g.a Min (S) Max VGS(off) Max (V) IGSS Max (A) C'sa Max (F) PD Max (W) Derate at (WrC) Toper Max (DC) Package Style P-Channel JFETs, (Co nt' d) 5 10 - 15 20 2N3386 5MPJ271 TMPFJ271 E175
|
Original
|
2N3386
5MPJ271
TMPFJ271
J175-18
MMBFJ175
5MPU305
5MP5115
TMPFU305
TMPF5115
e175 Siliconix
E175 fet
MMBFJ174
2N5475
u301 siliconix
InterFET u301
2N5114 motorola
55T175
2N5798
InterFET
|
PDF
|
NPD5564
Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Text: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership
|
Original
|
IntegraU404
LSU405
LSU406
LS841
LS842
LS421
LS422
LS423
LS424
NPD5564
NPD5566
BFY91
IMF3958
2N3050
NF5458
Fairchild E212
MP842
J9100
SST5638
|
PDF
|
2N3797
Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide
|
Original
|
AN211A/D
AN211A
2N3797
MPF102 equivalent transistor
MPF102 JFET
mpf102 fet
2N3797 equivalent
2N4221 motorola
MPF102 Transistor
mpf102 application note
P-Channel Depletion Mode FET
JFET TRANSISTOR REPLACEMENT GUIDE
|
PDF
|
AN211A
Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide
|
Original
|
AN211A/D
AN211A
AN211A
MPF102 JFET
MPF102 equivalent transistor
MPF102 Transistor
MPF102 JFET data sheet
2N3797
2N3797 equivalent
mpf102 fet
mpf102 equivalent P channel
2N4221 motorola
|
PDF
|
2N5460
Abstract: 2N5460 MOTOROLA 2N5461 MOTOROLA 2N5462
Text: MOTOROLA Order this document by 2N5460/D SEMICONDUCTOR TECHNICAL DATA J F E T A m p lifiers P-Channel — Depletion 2N5460 thru 2N5462 2 DRAIN MAXIMUM RATINGS Rating D rain-G ate Voltage Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc Forward Gate Current 'G f 10
|
OCR Scan
|
2N5460/D
2N5460
2N5462
10RAdc,
2N5460 MOTOROLA
2N5461 MOTOROLA
2N5462
|
PDF
|
2N5463
Abstract: 2N5463 MOTOROLA 2N5465 2N5460 2N5465 MOTOROLA 2N5464 2N5460 MOTOROLA 2N5464 equivalent 2N5461 MOTOROLA
Text: MOT OR OL A SC XSTRS/R F 13E D | b3h7S54 GOflbbM? 3 | 2N5460 thru 2N5465 CASE 29-04, STYLE 7 TO-92 TO-226AA M A X I M U M R A T IN G S Rating DrairvGate Voltage Reverse Gate-Source Voltage Sym bol 2N5460 2N5461 2NS462 2N5463 2N5464 2N5465 Unit Vd G 40 60
|
OCR Scan
|
b3h7S54
2N5460
2N5465
O-226AA)
2N5460
2N5461
2NS462
2N5463
2N5464
2N5465
2N5463 MOTOROLA
2N5465 MOTOROLA
2N5460 MOTOROLA
2N5464 equivalent
2N5461 MOTOROLA
|
PDF
|
2N5460
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N5460/D SEMICONDUCTOR TECHNICAL DATA JF E T A m p lifie rs 2N 5460 th ru 2N 5462 P-Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit VdG 40 Vdc V g SR 40 Vdc 'G f 10 mAdc Total Device Dissipation @ T /\ = 25°C
|
OCR Scan
|
2N5460/D
O-226AA)
2N5460
|
PDF
|
2N5482
Abstract: 2N5461 2N5480 2ns460 2N5460 2N5462 MOTOROLA 2N
Text: 2N5460 thru 2N5462* CASE 29-04, STYLE 7 TO-92 TO-226AA M A X I M U M R A T IN G S Rating Sym bol Value U nit VdG 40 Vdc V g SR 40 Vdc Drain-Gate Voltage Reverse Gate-Source Voltage 3 'Gift 10 m Adc Total Device Dissipation @ T a - 25°C Derate above 25°C
|
OCR Scan
|
2N5460
2N5462*
O-226AA)
2N5460,
2N5462
2N5482
2N5461
2N5480
2ns460
2N5462
MOTOROLA 2N
|
PDF
|
2N5460
Abstract: 2N5462 N5460 2n5461
Text: 2N5460 thru 2N5462* CASE 29-04, STYLE 7 TO-92 TO-226AA MAXIMUM RATINGS Symbol Value Unit VdG 40 Vdc V g SR 40 Vdc 'G if) 10 m Adc Total Device D issipation (a T ^ = 25°C Derate above 259C Pd 350 2.8 mW m W "C Ju n ctio n T em p erature Range Tj - 6 5 to +135
|
OCR Scan
|
2N5460
2N5462*
O-226AA)
2N5462
N5460
2n5461
|
PDF
|
5461 AB
Abstract: 2N5460
Text: 2N5460 thru 2N5462* CASE 29-04, STYLE 7 TO-92 TO-226AA MAXIMUM RATINGS Rating Unit Sym bol Value V DG 40 Vdc VGSR 40 Vdc D rain-G ate Voltage R e v e rse G ate-S ource Voltage 3 'G(f> 10 m A dc Total D evice D issip a tio n ut T a - 2 5 X Derate ab o ve 2 5 X
|
OCR Scan
|
2N5460
2N5462*
O-226AA)
5461 AB
2N5460
|
PDF
|
|
|
2N5457 equivalent
Abstract: JFET 2N5457 2N5486 MOTOROLA 2c003 2N5486 equivalent 2n5484 equivalent 2NS457 2N5460 transistor jfet 2N5457 2N5461
Text: 2N5457* CA SE 29-04, STYLE 5 TO-92 TO-226AA 1 Drain M A X IM U M RA TIN G S Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Sym bol Value Unit Vd s 25 Vdc V DG 25 Vdc Vdc 2 Source V G SR -2 5 Gate Current IG 10 mAdc Total Device Dissipation @ Ta = 25°C
|
OCR Scan
|
2N5457*
O-226AA)
-10iiAtlc
2N5484
2N5486
18-S11g
VDG-15Vdc
S12fl
20-S21j
-S22g
2N5457 equivalent
JFET 2N5457
2N5486 MOTOROLA
2c003
2N5486 equivalent
2n5484 equivalent
2NS457
2N5460
transistor jfet 2N5457
2N5461
|
PDF
|
2N4360
Abstract: 2N4342 motorola 2n4360 2n5270 2N5268 2N3909 2N5463 MOTOROLA 2NS462 2n5265 2n4340 motorola
Text: motorola i sc - cdiodes/optoj 6367255 34 MOTOROLA SC DËT|b3t.72S5 003Ö03T 7 DIO DES/OPTO 34C 38039 f - z f * 2 D r FIELD-EFFECT TRANSISTORS DICE (continued) 2C5462 DIE NO. UNE SOURCE — DFM125 This die provides performance equal to or better than that of
|
OCR Scan
|
DFM125
2N2608
2N2609
2N3330
2N3909
2N4338
2N4339
2N4340
2N4341
2N4342
2N4360
motorola 2n4360
2n5270
2N5268
2N5463 MOTOROLA
2NS462
2n5265
2n4340 motorola
|
PDF
|
MPF3330
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 15E D | b3b7554 0001.705 T I T"Ä! MPF990 For Specifications, See MPF930 _ _ _ _ . MPF3330 CASE 29-04, STYLE 5 TO-92 TO-226AA M A X I M U M R A T IN G S Sym bol Valu» U nit Drain-Gate Voltage Vdg 20 Vdc Gate-Source Voltage Vq s 20
|
OCR Scan
|
b3b7554
MPF990
MPF930
MPF3330
O-226AA)
2N5460
MPF3330
|
PDF
|
MFQ5460P
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 12E D I t»3b?a5M 00flfci758 1 | *p#3~25 QUAD DUAL-IN-LINE P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS MFQ5460P ' . . . d e p le tio n m o de Type A ju n c tio n fie id -e ffe c t tra n s is to rs d esig n ed fo r use in g en e ra l-p u rp o se a m p lifie r a pp licatio n s.
|
OCR Scan
|
00flfci758
2N5460
MFQ5460P
MFQ5460P
|
PDF
|
2N3330
Abstract: JFET 2N3330
Text: M OT O R O L A SC X S T R S /R F 12E D 1 b3b7g5t| OOflbbOb 2N3330 0 1 ' CASE 20-03, STYLE 5 TO-72 TO-206AF MAXIMUM RATINGS Symbol Valus Unit Vdg 20 Vdc Vgsr 20 Vdc Gate Current Ig 10 mAdc Total Device Dissipation @ T/\ = 25°C Derate above 25CC Pd 300 1.7
|
OCR Scan
|
2N3330
O-206AF)
2N5460
2N3330
JFET 2N3330
|
PDF
|
2N3909
Abstract: 2N3909A
Text: MOTORGLA SC XSTRS/R F 12E 0 I b3b?SS4 OQflbblb 3 | 2N3909, A CASE 20-03, STYLE 5 TO-72 TO-206AF 3 Drain MAXIMUM RATINGS Symbol Value Drain-Source Voltage Rating Vd S -2 0 Vdc Drain-Gate Voltage Vd G -2 0 Vdc Vg SR 20 Vdc Reverse Gate-Source Voltage Forward Gate Current
|
OCR Scan
|
2N3909,
O-206AF)
2N5460
2N3909
2N3909A
2N3909A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMBF5460LT1* M A X IM U M RATINGS Rating Symbol Value Unit Vdc Drain-Gate Voltage CASE 318-07, STYLE 10 SOT-23 TO-236AB V DG 40 V GSR 40 Vdc *GF 10 mAdc Symbol Max Unit Pd 225 mW 1.8 mW rc r »j a 556 °C/W TJ- Tsta - 5 5 to +150 °c Reverse Gate-Source Voltage
|
OCR Scan
|
MMBF5460LT1*
OT-23
O-236AB)
2N5460
MMBF5460LT1
|
PDF
|
2N3909
Abstract: 2N5460 2N3909A To-206AF
Text: MOTORGLA SC XSTRS/R 1 2 E D I b 3b 7 2 5 >f o o a t t . i t 3 F 2N3909, A C A SE 20-03, STYLE 5 TO-72 TO-206AF 3 Drain M A X IM U M RATIN G S Rating Symbol Value Drain-Source Voltage Vos -2 0 Vdc Drain-Gate Voltage Vd G -2 0 Vdc V g SR 20 Vdc Ig f 10 mAdc
|
OCR Scan
|
2N3909,
O-206AF)
2N5460
2N3909
2N3909A
2N3909A
To-206AF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMBF5460LT1* M A X I M U M R A T IN G S Rating S ym bol Value U n it Vdc Drain-G ate Voltage CASE 318-07, STYLE 10 SOT-23 TO-236AB vdg 40 V g SR 40 Vdc 'gf 10 m Adc S ym bol M ax U n it pd 225 mW 1.8 m W -cC R«j a 556 ’C/W T j ' Tstq - 5 5 to +150 =C
|
OCR Scan
|
MMBF5460LT1*
MMBF5460LT1
OT-23
O-236AB)
2N5460
|
PDF
|
mpf3002
Abstract: MPF4093 Motorola 2N4393 2N4393 MOTOROLA MPF4092 2N3971 2N5463 MOTOROLA 2N5639 MOTOROLA MPF4392 BF246A
Text: FIELD-EFFECT TRANSISTORS continued Switches and Choppers (continued) N-Channel JFETs rds(on) Package TO - Device (Q) MAX VGS(0ff) •d s s 0/) (m A) V(BR)GSS v (BR)GDO ^ is s ^rss *on *off @ (D (HA) MIN MAX MIN MAX (V) MIN (pF) MAX (pF) MAX (ns) MAX (ns)
|
OCR Scan
|
2N4860A
2N4857
2N4860
N4092
MPF4092
2N4392
MPF4392
2N4858A
2N4861A
2n3909
mpf3002
MPF4093
Motorola 2N4393
2N4393 MOTOROLA
2N3971
2N5463 MOTOROLA
2N5639 MOTOROLA
BF246A
|
PDF
|
