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    2N5302 TRANSISTOR Search Results

    2N5302 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
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    2N5302 TRANSISTOR Price and Stock

    Microchip Technology Inc 2N5302

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5302
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    • 100 $54.36
    • 1000 $54.36
    • 10000 $54.36
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    2N5302 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5302

    Abstract: 2N5303 jantx 2n5302 adc ic 1000C
    Text: TECHNICAL DATA 2N5302 JANTX, TXV 2N5303 JANTX, TXV MIL-PRF Processed per MIL-PRF-19500/456 DEVICES QPL NPN SILICON HIGH-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB PT 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C Collector-Emitter Voltage


    Original     		PDF 2N5302 2N5303 MIL-PRF-19500/456 2N5302 2N5303 1000C O-204-AA) 2N5302; jantx 2n5302 adc ic

    2N5302

    Abstract: 2N5303 2n5302 transistor TRANSISTOR 2n5302 1000C 2N5302 JANTXV
    Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage


    Original     		PDF MIL-PRF-19500/456 2N5302 2N5303 1000C O-204AA) 2N5302; 2N5302 2N5303 2n5302 transistor TRANSISTOR 2n5302 2N5302 JANTXV

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage


    Original     		PDF MIL-PRF-19500/ 2N5302 2N5303 1000C O-204AA) 2N5302;

    2N5302

    Abstract: No abstract text available
    Text: 2N5302 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER ! ! High Current Capability TO-3 High Power Dissipation ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage


    Original     		PDF 2N5302 2N5302

    Untitled

    Abstract: No abstract text available
    Text: 2N5302 High−Power NPN Silicon Transistor High−power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http://onsemi.com • Low Collector−Emitter Saturation Voltage − • VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc


    Original     		PDF 2N5302 2N5302/D

    2N5301

    Abstract: 2N5302 2N5303 2n53
    Text: SavantIC Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N4398/4399/5745 ·Low collector/saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in power amplifier and switching


    Original     		PDF 2N5301 2N5302 2N5303 2N4398/4399/5745 2N5301 2N5302 2N5303 2n53

    TRANSISTOR 2n5302

    Abstract: 2N5302
    Text: ON Semiconductort High-Power NPN Silicon Transistor 2N5302 . . . for use in power amplifier and switching circuits applications. • Low Collector–Emitter Saturation Voltage – 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc


    Original     		PDF 2N5302 r14525 2N5302/D TRANSISTOR 2n5302 2N5302

    2N5301

    Abstract: 2N5303 2N5302 53-02V 2N5302 data sheet 2N5302 inchange
    Text: Inchange Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N4398/4399/5745 ・Low collector/saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching


    Original     		PDF 2N5301 2N5302 2N5303 2N4398/4399/5745 2N5302 2N5301 2N5303 53-02V 2N5302 data sheet 2N5302 inchange

    BU108

    Abstract: 2SA1046 2SC7 BD129 mje13003 equivalent BU323A equivalent BU326 BU100 bd237 equivalent TIP32C equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS 200 WATTS • High Collector–Emitter Sustaining Voltage —


    Original     		PDF 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2N5301 2N5302 BU108 2SA1046 2SC7 BD129 mje13003 equivalent BU323A equivalent BU326 BU100 bd237 equivalent TIP32C equivalent

    2n5302 transistor

    Abstract: 2N5302 2N5302G MS5302
    Text: 2N5302 High−Power NPN Silicon Transistor High−power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http://onsemi.com • Low Collector−Emitter Saturation Voltage − • VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc


    Original     		PDF 2N5302 2N5302/D 2n5302 transistor 2N5302 2N5302G MS5302

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort High−Power NPN Silicon Transistor 2N5302 . . . for use in power amplifier and switching circuits applications. • Low Collector−Emitter Saturation Voltage − 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc


    Original     		PDF 2N5302

    2N5301

    Abstract: 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745
    Text: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS


    Original     		PDF 2N5301/D* 2N5301/D 2N5301 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745

    2N5301

    Abstract: 2N5302 2n5302 transistor 2N4398 2N4399 2N5303 2N5745
    Text: ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40–60–80 VOLTS


    Original     		PDF 2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5301 2N5302 2n5302 transistor 2N4398 2N5303 2N5745

    Untitled

    Abstract: No abstract text available
    Text: 2N5302+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N5302

    Untitled

    Abstract: No abstract text available
    Text: 2N5302+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N5302

    2N5301

    Abstract: No abstract text available
    Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS 3 J CD H m C < < — r* m « in w FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 2N5301, 2N5302 DESIGNED FOR COMPLEMENTARY USE WITH 2N4398, 2N4399 I. g w S On 200 W at 25°C Case Temperature


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2NS303) 2N5301

    2N5302

    Abstract: 2N5303 2N4398 2N4399 2N5301 2N5745 N5303
    Text: ÆàMOS PEC NPN SILICON HIGH-POWER TRANSISTORS NPN General Purpose use in power amplifier and switching circuit applications. 2N5301 2N5302 2N5303 FEATURES: * DC Current Gain Specified- 1.0 to 30 A * Low Collector-Emitter Saturation Voltage v CE<sat = °-75 v M ax) @ lc = 10 A - 2N5301, 2N5302


    OCR Scan     		PDF 2N5301, 2N5302 2N5303, 2N4398 2N4399 2N5745 2N5301 2N5303 2N5745 N5303

    Untitled

    Abstract: No abstract text available
    Text: Microsemi NPN Transistors Part Number JAN2N633S JANS2N6338 JANTX2N6338 JANTXV2N6338 JAN2N6339 JANS2N6339 JANTX2N6339 JANTXV2N6339 JAN2N6340 JANS2N6340 JANTX2N6340 JANTXV2N6340 JAN2N6341 JANS2N6341 JANTX2N6341 JANTXV2N6341 2N6686 2N6687 2N5301 2N5302 2N6326


    OCR Scan     		PDF O-120 NPN-21

    TIP 110 transistor

    Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
    Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2N5303) TIP 110 transistor TIP 22 transistor TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055

    2N5301

    Abstract: 2N5302 2N5303 RCA-2N5301
    Text: ÏÏÏ 3875081 G E SOLID D!T“|3fl75Dfll 0G173fii t^ | ~ STATE 01E 17384 D J~ - 2 3 - / S ' General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 RCA-2N5301, 2N5302 2NB301, 2NS303. 2N5301 RCA-2N5301

    2n5253

    Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
    Text: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321


    OCR Scan     		PDF OGOG43e! 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2n5253 2N5596 2N5321 2N5357 2N5498 lta 301

    Untitled

    Abstract: No abstract text available
    Text: ÏÏÏ 3875081 G E SOLID D!T“| 3 f l 7 5 D f l l STATE 01E 0G173fii 17384 t^ | ~ J~- 2 3 - / S ' D General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power


    OCR Scan     		PDF 0G173fii( 2N5301, 2N5302, 2N5303 TQ-204AA RCA-2N5301, 2N5302 2N5303 2N53Q2, 2NS303.

    2N5301

    Abstract: 2N5302 2N5301-1
    Text: 2N5301 2N5302 200 WATT NPN SILICON POWER TRANSISTOR Solid State Devices Incorporated 1 4 830 V alley V iew Avenue La Mirada, California 9 0 6 3 8 Telephone 213 9 2 1 -9 6 6 0 TW X -910-5 83-480 7 Xooa.^.s" • H F E .1 5 -6 0 @ 15 Amps


    OCR Scan     		PDF 2N5301 2N5302 2N5302 2N5301-1

    Untitled

    Abstract: No abstract text available
    Text: File Number 1029 HARRIS SEMICOND SECTOR 2N5301, 2N5302, 2N5303 SbE ]> High-Current High-Power High-Speed N-P-N Power Transistors • 43D2271 GGHOiiS^ 387 H H A S _ TERMINAL DESIGNATIONS F e a tu m : ■ Specification to r /ife and VcE saf up to 30 A ■ Current gain-bandw idth product h = 2 MHz min. a t 1 A


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 43D2271 O-204AA 2N5302 2N5303