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    2N5178 Search Results

    2N5178 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N5178 Great American Electronics Silicon NPN High Power UHF Transistor Scan PDF
    2N5178 Great American Electronics Silicon NPN high power UHF transistor Scan PDF
    2N5178 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5178 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5178 Unknown Transistor Replacements Scan PDF
    2N5178 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5178 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

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    Untitled

    Abstract: No abstract text available
    Text: 2N5178 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)55 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.150


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    PDF 2N5178 Freq200M

    2N5178

    Abstract: 40w electronic ballast 20W power transistor
    Text: GAE GREAT AMERICAN ELECTROINCS 2N5178 Silicon NPN high power UHF transistor 2N5178 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . Output Power: Frequency Range: Voltage: Package Type:


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    PDF 2N5178 2N5178 FO-85 40w electronic ballast 20W power transistor

    2N5178

    Abstract: No abstract text available
    Text: GAE GREAT AMERICAN ELECTROINCS 2N5178 Silicon NPN high power UHF transistor 2N5178 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . Output Power: Frequency Range: Voltage: Package Type:


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    PDF 2N5178 2N5178 FO-85

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711