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    2N5109 TRANSISTOR Search Results

    2N5109 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N5109 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n5109

    Abstract: transistor 2N5109
    Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR. 1 of 1 Home Part Number: 2N5109 Online Store 2N5109 Diodes RF & M IC RO WAVE DISC RETE LO W PO WER TRANSISTO RS Transistors Enter code INTER3 at


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    PDF 2N5109 com/2n5109 2N5109 transistor 2N5109

    2N5109

    Abstract: 19500/453 2N5109 JAN 2n5109 transistor transistor 2n5109
    Text: Data Sheet No. 2N5109 Generic Part Number: 2N5109 Type 2N5109 Geometry 1007 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/453 Features: • VHF-UHF amplifier silicon transistor. • Housed in TO-39 case. • Also available in chip form using the 1007 chip geometry.


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    PDF 2N5109 MIL-PRF-19500/453 MIL-PRF-19500/398 2N5109 19500/453 2N5109 JAN 2n5109 transistor transistor 2n5109

    2N5109

    Abstract: No abstract text available
    Text: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER


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    PDF 2N5109 2N5109 200MHz 23-June

    2n5109

    Abstract: transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor
    Text: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER


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    PDF 2N5109 CP214 2N5109 transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor

    2N5109

    Abstract: No abstract text available
    Text: DATA SHEET 2N5109 NPN SILICON RF TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MAXIMUM RATINGS TA=25°C unless otherwise noted


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    PDF 2N5109 200MHz 200MHz 2N5109

    2N5109

    Abstract: high frequency transistor
    Text: 2N5109 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N5109 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCE 20 V PDISS 1.0 W @ TA = 25 C O 2.5 W @ TC = 75 C O CHARACTERISTICS


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    PDF 2N5109 2N5109 100mA high frequency transistor

    2n5109

    Abstract: Transistor 2N5109 VCE-15V
    Text: 2N5109 SILICON NPN RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.


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    PDF 2N5109 100mA, 360mA 200MHz Transistor 2N5109 VCE-15V

    2N5109

    Abstract: No abstract text available
    Text: DATA SHEET 2N5109 NPN SILICON RF TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MAXIMUM RATINGS TA=25°C unless otherwise noted


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    PDF 2N5109 200MHz 200MHz 2N5109

    RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •


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    PDF 2N5109 To-39 2N5109 MRF559 MRF4427, 2N4427 MRF553 MRF553T MRF607 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553

    JANTX 2N5109

    Abstract: 2N510
    Text: 2N5109 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109J


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    PDF 2N5109 MIL-PRF-19500 2N5109J) 2N5109JX) 2N5109JV) 2N5109JS) MIL-STD-750 MIL-PRF-19500/453 -10dB JANTX 2N5109 2N510

    JANTX 2N5109

    Abstract: 2N5109 2N5109J 2N5109JS 2N5109JV 2N5109JX
    Text: 2N5109 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109J


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    PDF 2N5109 MIL-PRF-19500 2N5109J) 2N5109JX) 2N5109JV) 2N5109JS) MIL-STD-750 MIL-PRF-19500/453 -10dB JANTX 2N5109 2N5109 2N5109J 2N5109JS 2N5109JV 2N5109JX

    JANTX 2N5109

    Abstract: No abstract text available
    Text: 2N5109 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109J


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    PDF 2N5109 MIL-PRF-19500 2N5109J) 2N5109JX) 2N5109JV) 2N5109JS) MIL-STD-750 MIL-PRF-19500/453 -10dB JANTX 2N5109

    RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2N5109 RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 2n3866 2N3866 application note RF NPN POWER TRANSISTOR 2.5 GHZ S-parameter 2N5179
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •


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    PDF 2N5109 To-39 2N3866A MRF559 MRF904 MRF5943C 2N4427 MRF4427, RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2N5109 RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 2n3866 2N3866 application note RF NPN POWER TRANSISTOR 2.5 GHZ S-parameter 2N5179

    2N5109

    Abstract: transistor 2N5109 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ for transistor bfr96 2n5109 transistor
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •


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    PDF 2N5109 To-39 Volta12, 2N3866A MRF559 MRF904 MRF5943C 2N4427 MRF4427, 2N5109 transistor 2N5109 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ for transistor bfr96 2n5109 transistor

    RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ
    Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA • 1. Emitter 2. Base 3. Collector Maximum Unilateral Gain = 12dB typ @ 200 MHz TO-39 DESCRIPTION:


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    PDF 2N5109 To-39 MRF545 MRF544 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ

    Untitled

    Abstract: No abstract text available
    Text: 2N5109 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF 2N5109

    Untitled

    Abstract: No abstract text available
    Text: 2N5109+JAN Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF 2N5109

    Untitled

    Abstract: No abstract text available
    Text: 2N5109+JANTX Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF 2N5109

    Untitled

    Abstract: No abstract text available
    Text: 2N5109+JANTXV Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF 2N5109

    JANTX2N5109

    Abstract: JANTX2N3735 23219 2n2107 jantx2n3866
    Text: Microsemi NPN Transistors Part Number 2N5109 JAN2N5109 JANTX2N5109 JANTXV2N5109 2N3866A JAN2N3866A JANTX2N3866A JANTXV2N3866A 2N2106 2N2107 2N2108 2N3498 2N3499 JAN2N3498 JAN2N3499 JANTX2N3498 JANTX2N3499 JANTXV2N3498 JANTXV2N3499 2N2726 2N2727 2N4000 2N4001


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    PDF

    2N5109 SGS

    Abstract: 2n5109 Max17550 transistor Z2
    Text: 3QE » • 7^2=1237 Q 0 312E5 T ■ ' T i 2 \*Z'2 > r = 7 S G S -T H O M S O N ^ 7 # ^ a œ @ |L i O r a ô [ M D O i 2N5109 Y T ^ s - thom son EPITAXIAL PLANAR NPN C A T V U L T R A -L IN E A R HIGH G AIN T R A N ­ SISTO R The 2N5109 is a multi-emitter silicon planar epitaxial


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    PDF 312E5 2N5109 2N5109 T-31-23 200MHz 2N5109 SGS Max17550 transistor Z2

    2N5109 motorola

    Abstract: transistor 2N5109 c0851 2n5109
    Text: 4b E D • h3b?2S4 OOcmOb b 1 ■ flOTb T -3 3 -n MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 2N5109 MOTOROLA SC XSTRS/R F The RF Line 1.2 GHz 50 mAdc HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed specifically for broadband applications requiring good


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    PDF 2N5109 abo2-46 2N5109 motorola transistor 2N5109 c0851 2n5109

    2N5109

    Abstract: rca 2N5109 RCA-2N5109 TA2800 2n5109 rca CF-102-Q1 IN5109 transistor 2N5109 rca 0190 transistor field strength meter
    Text: File No. 281 RF Power T ran sisto rs Solid State Division 2N5109 Silicon N-P-N Overlay Transistor High G ain fo r Line A m p lifie rs in C A T V and M A T V E q uip m en t Features: • High gairvbandwidth product ■ Large dynam ic range ■ Low distortion


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    PDF 2N5109 RCA-2N5109* 2N5109 TA2800. rca 2N5109 RCA-2N5109 TA2800 2n5109 rca CF-102-Q1 IN5109 transistor 2N5109 rca 0190 transistor field strength meter

    2N5109

    Abstract: multi-emitter transistor transistor 2n5109 P15V 2n5109 transistor
    Text: 3 0E D • 7TET237 0031225 T " P 3 ì^ > S C S -T H O M S O N n O M H IL liO T n ^ O lM D O l 2 N 5 1 0 9 S fi S-THOMSON EPITAXIAL PLANAR NPN CA TV U LTR A -LIN EA R HIGH GAIN T R A N ­ SISTO R - The 2N5109 is a multi-emitter silicon planar epitaxial N PN transistor in Jedec TO-39 metal case. It is desi­


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    PDF 7TET237 2N5109 2N5109 2TS37 T-37-23 200MHz multi-emitter transistor transistor 2n5109 P15V 2n5109 transistor