2N5087
Abstract: transistors catalog motorola rectifier catalog
Text: 2N5087 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5087 Availability Online Store
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2N5087
2N5087
STV3208
LM3909N
LM3909
transistors catalog
motorola rectifier catalog
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2N5087
Abstract: transistor 2N5086
Text: MOTOROLA Order this document by 2N5087/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor 2N5087 PNP Silicon COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage
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2N5087/D
2N5087
2N5087
transistor 2N5086
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MPS3905
Abstract: 2N5086 2N5087 2n5087 motorola MPS3906
Text: MOTOROLA Order this document by 2N5086/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5086 2N5087* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO
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2N5086/D
2N5086
2N5087*
2N5086/D*
MPS3905
2N5086
2N5087
2n5087 motorola
MPS3906
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2n5087
Abstract: 2n5086
Text: MOTOROLA Order this document by 2N5086/D SEMICONDUCTOR TECHNICAL DATA 2N5086 2N5087* Amplifier Transistors PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 50
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2N5086/D
2N5086
2N5087*
226AA)
2N5086/D*
2n5087
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor 2N5087 PNP Silicon COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage VCBO 50
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2N5087
226AA)
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PDF
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2N5087
Abstract: AN-569
Text: MOTOROLA Order this document by 2N5087/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistor PNP Silicon 2N 50 87 COLLECTOR 3 Motorola Preferred Device 2 / base " 1 EMITTER 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Em itter Voltage VCEO 50 Vdc
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OCR Scan
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2N5087/D
N5087
O-226AA)
2N5087
AN-569
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motorola an569 thermal
Abstract: 2N5087 motorola an569
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Tran sistor PNP Silicon 2N5087 COLLECTOR 3 Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage v CEO 50 Vdc C ollector-B ase Voltage VCBO 50 Vdc Vdc E m itter-B ase Voltage
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OCR Scan
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2N5087
AN-569.
motorola an569 thermal
2N5087
motorola an569
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PDF
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2N5086
Abstract: No abstract text available
Text: 2N5086 2N5087* M A XIM U M RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage v EBO 3.0 Vdc Collector Current — Continuous 'c 50 mAdc Total Device Dissipation @ T ^ = 25X Derate above 25°C
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OCR Scan
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2N5086
2N5087*
T0-92
O-226AA)
MPS3905
01Q3342
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PDF
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2n5087
Abstract: No abstract text available
Text: 2N5086 2N5087* MAXIMUM RATINGS Rating Symbol Value U n it C o lie ctor-E m itter Voltage v CEO 50 Vdc Collector-Base Voltage VCBO 50 Vdc Em itter-Base Voltage v EBO 3.0 Vdc C o lle ctor C urrent - C ontinuous 'c 50 m Adc Total Device D issipation d T ^ = 25°C
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OCR Scan
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2N5086
2N5087*
O-226AA)
2n5087
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PDF
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2N5086
Abstract: No abstract text available
Text: 2N5086 2N5087* M A X IM U M RATINGS Symbol Value Unit C o lluctor-E m itter Voltage VcEO -5 0 Vdc Collector-Base Voltage v CBO -5 0 Vdc E m iter-B ase Voltage Ve b O - 3 .0 Vdc ic -5 0 m Adc = 25°C PD 625 5.0 mW m w rc Tote l Device D issipation r'fi T q = 25’C
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OCR Scan
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2N5086
2N5087*
T-150
O-226AA)
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MPS4250A
Abstract: MPS6519 motorola MPS6522
Text: M O T O R O L A SC -CDIODES/OPTO} 6367255 MOTOROLA SC 34 DIODES/OPTO D eT | b 3 b 7 2 5 S , /r 37998 T ~ 2- 7 SILICON SM ALL-SIG NAL TR A N SISTO R D'CE (continued) •"/ 7 2C5087 DIE NO. — PNP LINE SOURCE — DMB150 This die provides performance similar to that of the following device types:
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DMB150
2C5087
2N5086
2N5087
MMT71
MPS4248
MPS4249
MPS4250
MPS5138
MPS6518
MPS4250A
MPS6519 motorola
MPS6522
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pmi dac08
Abstract: digital power factor meter circuit diagram 2N3904 TRANSISTOR using darlington amplifier Voltage to Current Converter dual 4-20mA circuit Voltage to Current Converter dual 4-20mA circuit diagram 4 to 20mA transmitter schematic PMI OP AMP Voltage to Current Converter dual 4-20mA 4020Q 0.5 4-20mA ic
Text: AN-21 APPLICATION NOTE ANALOG ► DEVICES ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 4-20 mA Digital to Process Current Transmitter This application note describes a three IC, 4-20mA process current, digital-to-analog converter that can be constructed
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AN-21
4-20mA
DAC-08,
REF-01,
OP-14,
REF-01
DAC-08CQ
OP-221
CK-104
pmi dac08
digital power factor meter circuit diagram
2N3904 TRANSISTOR using darlington amplifier
Voltage to Current Converter dual 4-20mA circuit
Voltage to Current Converter dual 4-20mA circuit diagram
4 to 20mA transmitter schematic
PMI OP AMP
Voltage to Current Converter dual 4-20mA
4020Q
0.5 4-20mA ic
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MOTOROLA 2N5179
Abstract: motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866
Text: Central Semiconductor - Cross Reference Competitor Discontinued Part Replacements EOL Part # Manufacturer Name Central Semi Part # A12FR10 International Rectifier CR20-010R A12FR100 International Rectifier CR20-100R A12FR120 International Rectifier CR20-120R
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A12FR10
CR20-010R
A12FR100
CR20-100R
A12FR120
CR20-120R
A12FR20
CR20-020R
A12FR40
CR20-040R
MOTOROLA 2N5179
motorola 2N2219
motorola 2N2222A
motorola mpq3904
MOTOROLA 2N2905A
MJ3001 equivalent
motorola 2N4427
motorola 2N2219A
2N3819 MOTOROLA
motorola 2N3866
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BC309 equivalent
Abstract: st 393 8-pin T0-226AE
Text: MOTOROLA SC XSTRS/R F MbE D • b3b?2S4 Oa'Obll b ■MOTb SMALL-SIGNAL BIPOLAR TRANSISTORS — PLASTIC-ENCAPSULATED TRANSISTORS (continued) 7 ^ jZ 7 - Cs5 Table 1. Plastic-Encapsulated General-Purpose Transistors (continued) Case 29-03 — T0-226AE (1-WATT T0-92)
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T0-226AE
T0-92)
BDC01D
BC309 equivalent
st 393 8-pin
T0-226AE
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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PDF
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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MSC2404
Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
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MSA1022-CT1
Emitte218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MPF3821
BC237
MPS8093
BCY72
MMBF4856
MAD130P
MPS3866
bcy71 ALTERNATIVE
BSS72
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