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    2N4062 TRANSISTOR Search Results

    2N4062 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    2N4062 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4058

    Abstract: No abstract text available
    Text: 2N4058 2N4061 2N4059 2N4062 2N4060 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4058 series devices are silicon PNP transistors designed for low level, low noise 2N4058 , low level, high gain (2N4059, 2N4060, 2N4061, 2N4062) applications.


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    PDF 2N4058 2N4061 2N4059 2N4062 2N4060 2N4058) 2N4059, 2N4060, 2N4061,

    2N3707

    Abstract: 2N3711 2N3709 2n3708+equivalent
    Text: 2N3707 2N3710 2N3708 2N3711 2N3709 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3707 series devices are silicon NPN transistors designed for low level, low noise 2N3707 , low level, high gain (2N3708, 2N3709, 2N3710, 2N3711) applications.


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    PDF 2N3707 2N3710 2N3708 2N3711 2N3709 2N3707) 2N3708, 2N3709, 2N3710, 2N3711 2N3709 2n3708+equivalent

    BC548

    Abstract: BC338 BC338-16 BC338-25 BC338-40 BC368 BC547C BC548A BC548B BC548C
    Text: Small Signal General Purpose Transistors Part No. and Polarity NPN BC547C BC548A BC548B BC548C BC338 BC338-16 BC338-25 BC338-40 BC368 MPS8099 KSP8099 MPSA06 KSP06 MPS8098 KSP8098 MPSA05 KSP05 MPS6602 MPS2222A KSP2222A MPS6513 MPSA10 MPSA20 MPS2222 KSP2222


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    PDF BC547C BC548A BC548B BC548C BC338 BC338-16 BC338-25 BC338-40 BC368 MPS8099 BC548 BC338 BC338-16 BC338-25 BC338-40 BC368 BC547C BC548A BC548B BC548C

    2N4058

    Abstract: 2N4061 2N4062 2N4060 2N3711 2N3707 2N4059
    Text: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4058 series types are Molded Epoxy Silicon PNP Transistors designed for low level, low noise 2N4058 and Low level, high gain (2N4059, 2N4060, 2N4061, 2N4062) applications. Recommended NPN complementary series is 2N3707 thru '


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    PDF 2N4058 2N4058) 2N4059, 2N4060, 2N4061, 2N4062) 2N3707 2N3711. 2N4058 100yA 2N4061 2N4062 2N4060 2N3711 2N4059

    2N4058

    Abstract: 2N3711 2N3708 2n3710 2N3707 MICRO ELECTRONICS 2N4062 2N4061 2N3709 2N370 2N3707
    Text: 2N 3707 through 2N 3711 2N 4058 through 2N 4062 NPN . PNP SILICON AF SMALL SIGNAL TRANSISTORS . ' '=••' ' 2N3707 THROUGH 2N37H NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED


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    PDF 2N5707 2N37H 2N4058 2N4062 O-92B 2N3707 2N3711 2N4062 200mA 2N3708 2n3710 2N3707 MICRO ELECTRONICS 2N4061 2N3709 2N370

    2n4058

    Abstract: 2N3707 2N4062 2N4061 2N3710 2N370 2N3708 2N3709 ic 4058 2N4059
    Text: 2N 3 7 0 7 through 2N 3711 2N 4 0 5 8 through 2N 4062 NPN. . PNP SILICON AF SMALL SIGNAL TRANSISTORS I THE 2N3707 THROUGH 2N3711 NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED


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    PDF 2N3707 2N37H 2N4058 2N4062 2N3707 2N37H 2N4058 200mA 100mA 2N4062 2N4061 2N3710 2N370 2N3708 2N3709 ic 4058 2N4059

    Untitled

    Abstract: No abstract text available
    Text: 2N 3 7 0 7 through 2N 3711 2N 4 0 5 8 through 2N 4 0 6 2 NPN. . PNP SILICON AF SMALL SIGNAL TRANSISTORS I •¡Hi THE 2N3707 THROUGH 2N3711 NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED


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    PDF 2N3707 2N3711 2N4058 2N4062 O-92B 2N37H 2N4058 2N3708

    2N4058

    Abstract: A5T4058 A8T4061 a5t37 IR 4062 2n4062
    Text: TYPES 2N4058 THRU 2N4062, A5T4058 THRU A5T4062, A8T4058 THRU A8T4062 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 2 . M A R C H 1973 S IL E C T t TR A N SISTO R S* • Ideal for Low-Level Amplifier Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil


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    PDF 2N4058 2N4062, A5T4058 A5T4062, A8T4058 A8T4062 100-mil A5T3707 5T3711, 8T3707 A8T4061 a5t37 IR 4062 2n4062

    2N4288

    Abstract: 2N4249 2N4059 2N4289 2N4291 2N4971 2N3702 2N3703 2N3905 2N3906
    Text: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. ^cao (V) Min ^CEO ^EBO (V) Min M Min 'c Pd (W) (A) Tc=25°c Max 'cBO m ^CB ®(V) 'c e s m Max ^CE »FE 9 « « Min 'c & (mA)


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    PDF 2N3702 O-92-1 2N3703 2N3905 2N3906 2N4291 2N4402 2N4288 2N4249 2N4059 2N4289 2N4971

    TO92 30v 800ma

    Abstract: 180NS
    Text: MOE T> " imiiirr i i V- n‘ T flS flW QQ032fil 3 BERHM ~~ ~F27-0 • P N P Transistors T O -92) General Purpose Small Signal Amplifiers Package BVceo (Fig. 1)' Min. TO-92 2N3702 (ECB) 40V MPS3702 (EBC) TO-92 2N3703 (ECB) 50V MPS3703 (EBC) TO-92 2N3058


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    PDF QQ032fil 2N3702 MPS3702 2N3703 MPS3703 2N3058 RN4058 2N40S9 RN4059 2N4060 TO92 30v 800ma 180NS

    2N4249

    Abstract: 2N4288 2n4058 2N4289 2N4971 2N3702 2N3703 2N3905 2N3906 2N4059
    Text: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. CBO CEO ^EBO Pd Min @Tc=25°c (V) (V) (V) Min Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (W) ICBO (A) ^CB ^ces ^ ce m @(v) (jA) Max Max h FE @ 6 (V) Min 'c * (mA)


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    PDF 2N3702 O-92-1 2N3703 2N3905 2N4964 2N4965 2N4971 2N4249 2N4288 2n4058 2N4289 2N3906 2N4059

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors PNP Maxim um Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd ^CBO ^CEO ^EBO (W) (A) (V) (V) (V) Min Min Min @Tc=25°c ^CES ^CE I'Ve @ (V) (PA) @ (V) Min Max Max Max IcBO m lc * (mA)


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    PDF 2N3702 O-92-1 2N3703 2N3905 2N4402 2N4403 2N4964 2N4965 2N4971

    silect

    Abstract: 2S503 N4060 bc182l 2N2483 2N3707 2N3709 2N929 2N930 2S501
    Text: Silicon Transistors T ype C ase No. C o ^ <u M axim um R a tin g s at25°C amb. S P E C IA L C h a ra c te ris tic s FEATURES p <0 c a> o « O w fT h FE V CE SAT ' V CB V CE V EB V V V A M in. P.o, w Max. mA mA M in. 'c *B Max. M c/s mA mA V N PN Low Level


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    PDF 2N929 2N930 2N2483 N2484 2S501 2S502 2S503 2N3707 2N3012 TIS50 silect N4060 bc182l 2N3709

    2N4288

    Abstract: 2N4062 2n4289 2N4248 2N4249 2N4250
    Text: «MMJ This PNP Transistors Material /> £ 3 S e m ic a r K J u c lo r Lo w m L e v e l A m P |i,ie r s 2 t-H Copyrighted Type No. Case Style 2N2605 TO-46 By 2N35S0 to -ib VCE(SAT VBE(SAT) VcbO VCEO Ve BO 'CB0 VCB l»FE - lc . VCE (V) (nA)@ “ (V) (V) Min Max (mA) (V)


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    PDF S01130 T-31-01 2N4288 2N4062 2n4289 2N4248 2N4249 2N4250

    2n4917

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. =13 D • Ü5DM33Ö OüaBS'iS 3 ■ ALGR S E M I C O N D S / ICS PLASTIC-CASE BIPOLAR TRANSISTORS 93D 03595 j _ PNP Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C


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    PDF 5DM33Ã TP3644 2N3702 2N3703 TP3798 TP3798A TP3799 TP3799A 2N3905 2N3906 2n4917

    PN4250

    Abstract: 2N4248 2N4288 2N4249 2N4250A 2N4250
    Text: This Material PNP Transistors Copyrighted 3> —3 LOW LEVEL AMPS C«a Style Vc b o V Min v CEO (V) Min vebo 2N2604 TO-46 60 45 6 By Type No. (V) Min •CBO VCB (nA) (V) Max 10 *>FE 'C » VCE Min Max (mA| (V) 350 45 10 VCE(SAT) VBE(SAT) (V) 8. (V) »


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    PDF bSD1130 0035M4E PN4250 2N4248 2N4288 2N4249 2N4250A 2N4250

    BC548 Texas Instruments

    Abstract: SX3711 BC182L complementary 2N3708 BC183L BC214 alternative BC182 BC547 2n4058 bc182l pin configuration pnp transistor BC557
    Text: 1 Silect Coding Silect transistors are coded on the indexing flat of the TO-92 outline. Pin Configurations The majority of Silect transistors shown are available in several alternative case outlines or pin configurations which include many pre-formed lead types. Devices are therefore available


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    PDF SX4061 2N4061T05 2N3709, 2N4062 SX4062 2N4062T05 2N3710, 2N3711 BC546 BC547 BC548 Texas Instruments SX3711 BC182L complementary 2N3708 BC183L BC214 alternative BC182 BC547 2n4058 bc182l pin configuration pnp transistor BC557

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SENICOND GROUP T3 D • ÖS13SS0 00035=15 8 5 1 4 0 1 9 S P R A G U E ’ S E M I C O N D S / ICS 4 ■ 9 3 D 0 3 5 9 5 J PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘2N’ and ‘T P ’ Device Types ELECTRICAL CHARACTERISTICS atTA = Z5°C


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    PDF S13SS0 TP3644 2N3702 2N3703 TP3798 TP3798A TP3799 TP3799A 2N3905 2N3906

    2N4288

    Abstract: 2N3605 2N4249 2N3606 2N3694 2N3111 2n3194 2N3417 2N3564 2N3662
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Vceo (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CEO V EBO (V) Min (V) Min PD 'c <W) (A) Tc=25"q 2N3417 50 50 5 0.625 0.1 2N3564 30 15 4 bßo VCB ' c e s V CE


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    PDF 2N3417 O-92-1 2N3564 2N3605 2N3606 2N36Q7 2N4291 2N4288 2N3605 2N4249 2N3606 2N3694 2N3111 2n3194 2N3662

    fr 3707 z

    Abstract: fr 3709 z fr 3709 2N3711 2N3707 a5t3707 2n3711 TY A5T3711
    Text: TYPES 2N3707 THRU 2N3711, A5T3707 THRU A5T3711, A8T3707 THRU A8T3711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 5 , M A R C H 1973 S I L E C T t T R A N S IS T O R S Ï • Ideal for Low-Level Amplifier Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil


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    PDF 2N3707 2N3711, A5T3707 A5T3711, A8T3707 A8T3711 100-mil 2N4058 2N4062, 5T4058 fr 3707 z fr 3709 z fr 3709 2N3711 2n3711 TY A5T3711

    NPN transistor 2n4400 beta value

    Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
    Text: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN


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    PDF 2N2711 2N2712 2N2924 2N2925 2N2926Â 2N4401 2N4402 2N4403 MPS2713 MPS2714 NPN transistor 2n4400 beta value TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644

    100ria

    Abstract: 25V6K RN5305 2N4494
    Text: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V


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    PDF 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 100ria 25V6K RN5305 2N4494

    2N4265

    Abstract: Sprague Electric 2N5832 2N3859 2N2926-1 660111 sprague TO92 2N3404 NPN 2N4062 2N2712
    Text: SPRAGUE BIPOLAR TRANSISTORS • BIPOLAR TRANSISTORS THE MARK OF RELIABILITY SERIES 2N TRANSISTORS • Sm all-signal TO-92 plastic transistors. JEDEC ‘2N’ registered types. Catalog Number Case Style PD , = 25°C mW 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2926 2N3395 2N3396 2N3397 2N3398 2N4265 Sprague Electric 2N5832 2N3859 2N2926-1 660111 sprague TO92 2N3404 NPN 2N4062

    sx3704

    Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
    Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are


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    PDF ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram