2N3879 Search Results

k 3878

Abstract: 2N3879 2N650A 2n5202 2N3879A
Contextual Info: P o w e r Tran sistors File Num ber 766 2N3878, 2N3879, 2N5202, 2N6500 HARRIS SEMICOND SECTOR 27E D • 4302E71 OOnflBl 0 * H A S ~ r - 3 3 - i / High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors F o r H ig h -S p e e d S w itc h in g and L in e a r-A m p lifie r A p p lic a tio n s

2N1724A

Abstract: TO61 2N3442 2N1724 2N1725 2N3773 2N3878 2N3879 2N3446 2N5326
Contextual Info: _1 4 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE

2N3907

Contextual Info: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028

2N3879

Abstract: MIL-PRF-19500/526 2N3879 JANTXV
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/526 Devices Qualified Level 2N3879 JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation

2n3878

Abstract: TA7285 2N3879 2N5202
Contextual Info: File N u m b e r 2N3878, 2N3879, 2N5202 766.1 High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors For H ig h -S p ee d S w itchin g and L in ea r-A m p lifie r A p p licatio n s Features: • ■ ■ M a x im u m -a re a -o f-o p e ra tio n c u rv e s l o r d c a n d p u ls e o p e r a tio n

Contextual Info: 2N3879+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)75 V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25m÷ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)4.0

Contextual Info: 2N3879+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)75 V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25m÷ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)4.0

2N3492

Abstract: 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879
Contextual Info: Device Type 2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N5427 2N5428 2N5429 2N5430 2N6077 2N6078 2N6079 VCEO V 75 60 80 100 60 80 100 200 250 300 80 80 100 100 275 250 350 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/80 4.0

ta8932

Abstract: 2N3879 TA7285 P602I 2N5202 2N3878 2N6500 2N3679 RCA Solid State Power Transistor PT3535
Contextual Info: "üï »F|3fl7SGfll D0171QS 7 01E 17105 171Q_ _01E D High-Speed Power l 1u ° u 7^_ L— 3875081 G E SOLID STATE 2N3878, 2N3879, 2N5202, 2N6500 File N u m b e r

2N3879

Contextual Info: SavantIC Semiconductor Product Specification 2N3879 Silicon NPN Power Transistors DESCRIPTION With TO-66 package •Wide area of safe operation ·High sustaining voltage · APPLICATIONS ·For high-speed switching and linearamplifier applications PINNING See Fig.2

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3879 • High Power • Hermetic TO-66 Metal Package • Ideally suited for High Current, High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

transistors 1U

Abstract: 2N3879 2N3878
Contextual Info: 01 » E ^ 3 f l ? S D a i 0017105 " 0 1 E 171Q5 _ 0 1E 1 7 11u0 5 High-Speed Power Transistors-— D 3875081 G E SOLID 7 STATE 2N3878, 2N3879, 2N5202, 2N6500 D u Tz. L — U File Number

2n3879

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3879 • High Power • Hermetic TO-66 Metal Package • Ideally suited for High Current, High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

TO-213AA

Abstract: 2N3879 2N3879 JANTX TO213AA
Contextual Info: 2N3879 NPN POWER SILICON TRANSISTOR IN A HERMETICALLY SEALED METAL PACKAGE MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. 11.94 (0.470) 12.70 (0.500) 2 FEATURES 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590)

2n3879

Abstract: 2n5202 101075A 2N3679 P602I TA7285 rdf1
Contextual Info: File Number 766.1 2N3878, 2N3879, 2N5202 HARRIS S E m C O N D SECTOR ShE D M302E71 QQMDMMl 147 • HAS ■ High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors For High-Speed Switching and Linear-Amplifier Applications Features: ■ M axim um -area-of-operatlon curves fo r d c and pulse operation

Contextual Info: 2N3879+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)75 V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25m÷ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)4.0

RCA1A19

Abstract: rca 40362 40362 RCA 40319 40391 RCA RCA1A08 2n4314 RCA1A02 2N6496 RCA rca 2N4314
Contextual Info: High-Speed-Switching n-p-n and p-n-p Type Selection Charts cont'd "FE v C E O (sus) V C E X V (sus) V 'C mA V V (sat)-V •CEO-MA CE V CE Temp.—°C ^CE 'c 25 V mA 2N3879 FAMILY (n-p-n) High Cu f = 60MHzmin;P = 35W T 0-213MA Package T 85* 75* 65+ 90* 110*

Contextual Info: 2N3879 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

2H2904

Abstract: 2NI483-86
Contextual Info: QPL DEVICES DEVICE TYPE JAN JANTX 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714-Ì7 2N1722 2N1724 2N2015.16 2H2812.14 2N2880 2N3418-21.S 2N3439.40.L 2N3506.Û7.L 2N3584.85 M 715J6 2N3739 2N3740,41 2N3749 2H 376Ï67 2N3846.47 2N3867.68.S 2N3879

2N3879SMD05

Contextual Info: 2N3879SMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount

Contextual Info: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232

Contextual Info: Ic = 7.0 AMPS DEVICE TYPE PACKAGE 2N3878 2N3879 2N5346 2N5347 2N5348 BVCbo VOLTS BVebo VOLTS P0 @ 100°C WATTS h FE @ VcE Min. Max. AMPS VOLTS TO-66 50 TO-66 75 TO-59/lso 80 TO-59/lso 80 TO-59/lso 100 120 120 80 80 100 7.0 7.0 6.0 6.0 6.0 20.0 20.0 34.0 34.0

2N2814 JAN

Abstract: 2n3442 2N1724A 2N2812 TO61 2N1724 2N1725 2N3773 2N3878 2N3879
Contextual Info: _1 4 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE

Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 526 Devices Qualified Level 2N3879 JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation