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    2N3261 Search Results

    2N3261 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3261 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    2N3261 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    2N3261 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N3261 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3261 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3261 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3261 Unknown Vintage Transistor Datasheets Scan PDF
    2N3261 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3261 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3261 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3261 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3261 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3261 Unknown Transistor Replacements Scan PDF
    2N3261 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3261 Semico High Speed Logic Switches / Core Drivers / Amplifiers Scan PDF
    2N3261 ZaeriX Short Form Data Catalogue 1972-73 Short Form PDF
    2N3261 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF

    2N3261 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2FP TRANSISTOR

    Abstract: 2N3261 ATML H
    Text: <£tml- 2oncluatoi ZPioJLat*, Una. TELEPHONE: (973 378-2022 (212) 227-6006 FAX: (973) 3764060 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA DIMENSIONAL OUTLINE JEOEC Ho.TO-52 2N3261 SILICON N-P-N HIGH-SPEED TRANSISTOR 1 h- :i?l "«• — i _,., , L .„


    Original     		2N3261 2FP TRANSISTOR 2N3261 ATML H PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3261 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.


    Original     		2N3261 Freq300M PDF

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


    Original     		PDF

    Stancor tp-3

    Abstract: CA3085 diagram CA3085 1N3193 2N3261 CA3085A CA3085B CA3085E CA3085S LM100
    Text: CA3085, CA3085A CA3085B S E M I C O N D U C T O R Positive Voltage Regulators from 1.7V to 46V at Currents Up to 100mA April 1994 Features Description • Up to 100mA Output Current The CA3085, CA3085A, and CA3085B are silicon monolithic integrated circuits designed specifically for service as voltage regulators at output


    Original     		CA3085, CA3085A CA3085B 100mA 100mA CA3085A, CA3085B LM100 Stancor tp-3 CA3085 diagram CA3085 1N3193 2N3261 CA3085A CA3085E CA3085S PDF

    2N3409

    Abstract: 2N2538 2N2539 2N3303 2N3723 2N27S 2N3426 2N4873 2N3444 2N2501
    Text: 8134693 40 S E M I CO A HIGH SPEED LOGIC SW ITCHES C ont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 2N703 2N560 2N2538 2N2539 2N2540 2N2787 PD Ambient mW VCB


    OCR Scan     		DD0013S 2N3059 0X5-46 2N5187 2N706B/46 2N2894 0X5-18 2N3011 2N3261 2N4873 2N3409 2N2538 2N2539 2N3303 2N3723 2N27S 2N3426 2N3444 2N2501 PDF

    Untitled

    Abstract: No abstract text available
    Text: 40 81 34 693 SEMICOA DE | 0134^3 00 D01 3S M HIGH SPEE D LOGIC SW ITCHES C e n t’d Maximum Ratings Type NPN PNP 2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 2N703 2N560 2N2538 2N2539 2N2540 2N2787 PD Ambient mW Electrical Characteristics @ 25°C


    OCR Scan     		2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 PDF

    transistor t2a

    Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25
    Text: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200


    OCR Scan     		BSY95A ZTX310, BSV23 ZTX311 BSV24 ZTX312, BSV25 ZTX313, BSV26 ZTX314, transistor t2a 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 PDF

    BD320C

    Abstract: 2N3725 tip122 tip127 BD321A TlPl22 2N3261 2N3512 2N3724 BD320A BD320B
    Text: CORE DRIVERS TABLE 9 - N P N SILICON PLANAR HIGH SPEED CORE DRIVER TRANSISTORS The devices shown in this table are designed fo r use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is o f prime importance.


    OCR Scan     		BSX59 BSX60 BSX61 2N3261 2N3512 O-390 TIP122 T0-220 TIP127 TIP121 BD320C 2N3725 tip122 tip127 BD321A TlPl22 2N3724 BD320A BD320B PDF

    2N3261

    Abstract: 2N3261A 2N3251A 2n3250A 2n3251
    Text: 2N3250, A 2N3251, A MAXIMUM RATINGS Sym bol Rating Collector-Emltter Voltage 2N32E0 2N3250A 2N3251 2N3251A V C EO 40 Collector-Base Voltage V cB O 50 Emlt1er»Bass Voltage vebo Vdc 60 Vdc 5.0 Vdc Collector Current ic 200 m Adc Total Device Dissipation @ T^ = 25°C


    OCR Scan     		2N3250, 2N3251, 2N32E0 2N3250A 2N3251 2N3251A 2N3261A O-206AA) 2N3250. 2N3261 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    BD320C

    Abstract: BD321A 2N3261 2N3512 2N3724 2N3725 BD320A BD320B BSX59 BSX60
    Text: CORE DRIVERS TABLE 10 - NPN SILICO N PLANAR HIGH SPEED CORE DRIVER T R A N SIST O R S The devices show n in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime importance.


    OCR Scan     		2N3725 BSX59 BSX60 BSX61 2N3512 BD320C BD321A BD321B BD321C BD321A-18 2N3261 2N3724 BD320A BD320B PDF

    2N2926

    Abstract: R-067 2N3055 2N3133 2N3404 x20a transistor 2N3819 2N3053 2N3054 2N3134
    Text: 58 T ran sisto rs Continued Notes 1> (2 <3> Minimum value Average value Max. unilateraiized power gain Max. frequency of oscillation (5) With heat sink Ptot: Max. total dissipation in free air at 25°C ambient temp. V » » : Max. collector-to-base voltage, emitter


    OCR Scan     		2N2926 200mW 120mc 120mcl2) 120mct2) 360mW R-067 2N3055 2N3133 2N3404 x20a transistor 2N3819 2N3053 2N3054 2N3134 PDF

    2N3261

    Abstract: 2N3512 2N3724 2N3725 BD320A BD320B BD320C BSX59 BSX60 BSX61
    Text: CORE DRIVERS TABLE 9 - N P N SILICON PLANAR HIGH SPEED CORE DRIVER TRANSISTORS The devices shown in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime importance.


    OCR Scan     		BSX59 BSX60 BSX61 2N3261 2N3512 O-39O-39 BD320C BD321A BD321B BD321C 2N3724 2N3725 BD320A BD320B PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    1.0 k mef 250

    Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
    Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a


    OCR Scan     		semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072 PDF

    transistor bd320c

    Abstract: 2N3261 BD320C 2N3512 2N3724 2N3725 BD320A BD320B BSX59 BSX60
    Text: CORE DRIVERS TA B LE9 NPN SILICON PLANAR HIGH S P E E D C O R E D RIV ER T R A N S IST O R S The devices shown in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime


    OCR Scan     		BSX59 BSX60 BSX61 2N3261 2N3512 BD320C BD321A BD321B BD321C BD322A transistor bd320c 2N3724 2N3725 BD320A BD320B PDF

    BD320C

    Abstract: 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89
    Text: NPN SWITCHING TABLE 3 - NPN SILICO N PLANAR M E D IU M A N D HIGH SPEED SW IT C H IN G T R A N S IS T O R S T h e d e v ice s s h o w n in this table are characterised for m edium and high speed sw itc h in g applications in C om m ercial, Industrial and M ilitary equipm ents.


    OCR Scan     		2N3262 T0-39 T0-18 BD320C BD321A BD321B BD321C BD321A-18 BD321B-18 BD321C-18 2N2102 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89 PDF

    transistor t2a

    Abstract: NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA BSV23
    Text: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics Maximum Ratings Type No. v CBO VCER Vebo Ptot 25°C smb. fT min. Storajje Time ts (i nax.) at lc mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200 200


    OCR Scan     		BSY95A ZTX310, BSV23 ZTX311 BSV24 ZTX312, BSV25 ZTX313, BSV26 ZTX314, transistor t2a NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA PDF

    BD320C pin

    Abstract: VHF power TRANSISTOR PNP TO-39 2N2221 2N2222 2N2483 FF2221E FF2221J FF2222E transistor 2n2907 FF2483E
    Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium


    OCR Scan     		FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J MoulO-39 BD320C pin VHF power TRANSISTOR PNP TO-39 2N2222 2N2483 transistor 2n2907 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    BSX19 equivalent

    Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small


    OCR Scan     		OT-23 BSX19 equivalent BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868 PDF