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    2N3250 SOT23 Search Results

    2N3250 SOT23 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation

    2N3250 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF441

    Abstract: BF440 224AA G-T40N KT361 A5T3906 BFW90 LOW-POWER SILICON PNP 75n80 2N601
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 2N3905 2N5382 BC126A BC126A BC126A BSX36 PH2907R SOR2907 (A) HSE402 MMBT4403 MMBT440~ 15 20 25 30 MMBT4403 A5T4403 2N4403 SF106 P2N2907 MPS6517 TMPT2907 TMPT4403 A5T3905 SF222 SF322 2N4143 B5W75


    Original     		PDF 2N3905 2N5382 BC126A BSX36 PH2907R SOR2907 HSE402 MMBT4403 BF441 BF440 224AA G-T40N KT361 A5T3906 BFW90 LOW-POWER SILICON PNP 75n80 2N601

    TRANSISTOR BC337 SMD

    Abstract: transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139
    Text: • Transistors • • • • • Small Signal Medium Power Power Darlington MOSFET CDIL Semiconductors ~ Worldwide Reach Product Profile Transistors Product Range • • Chips/Dice – Diffused Silicon Wafers Surface Mount and Leaded Semiconductor Devices


    Original     		PDF MPSA45 P2N2369 PN2222 MPSA05 MPSA55 P2N2369A PN2222A MPS2907A MPSA06 MPSA56 TRANSISTOR BC337 SMD transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139

    SO930

    Abstract: SO918 BSX28 BCW67B SOT-223 SO5400 low noise transistors vhf So642 2n2222a SOT223 BCY70 bfx40
    Text: TRANSISTORS SMALL SIGNAL TO-18 TO-39 TO-72 SOT-223 TO-126/SOT-32 SOT-23 TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Max rating Polarity VCEO V NPN NPN NPN PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN 15 12 15 25 25 25 25 20 30 15 15 20 30 20 IC Type Ptot


    Original     		PDF O-126/SOT-32 OT-223 OT-23 2N2857 2N5179 BFX89 BFR99A BFR99 BFW16A BFW17A SO930 SO918 BSX28 BCW67B SOT-223 SO5400 low noise transistors vhf So642 2n2222a SOT223 BCY70 bfx40

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


    Original     		PDF MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    BC237

    Abstract: MPSA06 346
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste


    Original     		PDF MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


    Original     		PDF MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    2N643

    Abstract: BC237 MARKING DP SOT-363 DO204AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		PDF MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA

    BC237

    Abstract: MMBD2005T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		PDF MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    MPS5771

    Abstract: MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3640 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage


    Original     		PDF MPS3640 226AA) U218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPS5771 MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic

    BC237

    Abstract: TRANSISTOR bc177b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel


    Original     		PDF BAW156LT1 BAW156LT3 inch/10 BAW156LT1 236AB) Junc218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 TRANSISTOR bc177b

    MPS6520 equivalent

    Abstract: BC237 transistor Vbe 2n2222 Characteristic curve BC107
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW01 MPSW01A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage MPSW01 MPSW01A VCEO Collector – Base Voltage


    Original     		PDF MPSW01 MPSW01A* MPSW01A 226AE) Junc218A MSC1621T1 MSC2404 MPS6520 equivalent BC237 transistor Vbe 2n2222 Characteristic curve BC107

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA CATV Transistor MPSH17 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15


    Original     		PDF MPSH17 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    MPS2369 equivalent

    Abstract: BC237 2N5551 circuit 2N2369A MOTOROLA t1 bc140 BS107 "direct replacement"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MPS2369 MPS2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Emitter Voltage


    Original     		PDF MPS2369 MPS2369A* 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPS2369 equivalent BC237 2N5551 circuit 2N2369A MOTOROLA t1 bc140 BS107 "direct replacement"

    motorola p1f

    Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 unit218A MSC1621T1 motorola p1f hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363

    BC237

    Abstract: marking CODE N3 SOT223 marking N3
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE


    Original     		PDF MGSF1N03LT1 Sur218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 marking CODE N3 SOT223 marking N3

    MV104 "direct replacement"

    Abstract: 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning.


    Original     		PDF MV104) MV104 226AA) Curren218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV104 "direct replacement" 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION

    2N3819

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package which is designed for


    Original     		PDF OT-416/SC 7-inch/3000 2SC4617 SURFAC218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2N3819 BC237 BCY72

    code marking 6z sot-23

    Abstract: BC237 H2A transistor BF245 6z sot223 marking MMBV2104 j112 fet BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor MMBF170LT1 DRAIN 3 N–Channel  1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage — Continuous


    Original     		PDF MMBF170LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 code marking 6z sot-23 BC237 H2A transistor BF245 6z sot223 marking MMBV2104 j112 fet BCY72

    2608 surface mount transistor

    Abstract: BC237 high hfe darlington transistor sc70
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Darlington Transistors NPN Silicon MPS6724 MPS6725 COLLECTOR 3 BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol MPS6724 MPS6725 Unit Collector – Emitter Voltage VCES 40 50 Vdc Collector – Base Voltage VCBO 50


    Original     		PDF MPS6724 MPS6725 MPS6725 226AE) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2608 surface mount transistor BC237 high hfe darlington transistor sc70

    hie for bc547b

    Abstract: bc109 2n2222a SOT223 BC237 MPS3563 2N2904 BF256 BSS89 APPLICATION BCY72 mps5771
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6428 NPN Silicon COLLECTOR 3 2 BASE 1 1 EMITTER 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage


    Original     		PDF MPS6428 226AA) Unit218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 hie for bc547b bc109 2n2222a SOT223 BC237 MPS3563 2N2904 BF256 BSS89 APPLICATION BCY72 mps5771

    mps2907 replacement

    Abstract: BC237 motorola 2n4033 Transistor 2N3019
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors MPS2907 MPS2907A* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol MPS2907 MPS2907A Unit Collector – Emitter Voltage VCEO –40 –60 Vdc


    Original     		PDF MPS2907 MPS2907A* MPS2907 MPS2907A 226AA) Therma218A MSC1621T1 MSC2404 MSD1819A MV1620 mps2907 replacement BC237 motorola 2n4033 Transistor 2N3019

    j305 replacement

    Abstract: BC237 mps2907 replacement BC109C replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical


    Original     		PDF MMBV3102LT1 236AB) t218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 j305 replacement BC237 mps2907 replacement BC109C replacement

    MPSW06 equivalent

    Abstract: BC237 Motorola MPSA42
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector – Emitter Voltage VCEO 60 80 Vdc Collector – Base Voltage


    Original     		PDF MPSW05 MPSW06* MPSW06 226AE) Thermal218A MSC1621T1 MSC2404 MSD1819A MV1620 MPSW06 equivalent BC237 Motorola MPSA42

    BSX19 equivalent

    Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small


    OCR Scan     		PDF OT-23 BSX19 equivalent BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868