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    2N3055 Price and Stock

    onsemi 2N3055G

    TRANS NPN 60V 15A TO204
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    DigiKey 2N3055G Tray 201 1
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    2N3055G Bulk 16 Weeks, 4 Days 1
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    Mouser Electronics 2N3055G 6,292
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    Rochester Electronics 2N3055G 36 1
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    onsemi 2N3055AG

    TRANS NPN 60V 15A TO204
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    DigiKey 2N3055AG Tray 154 1
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    Avnet Americas 2N3055AG Bulk 18 Weeks, 1 Days 1
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    2N3055AG Tray 15 Weeks 100
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    Mouser Electronics 2N3055AG 183
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    Avnet Asia 2N3055AG 15 Weeks 300
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    Solid State Inc 2N3055

    TRANS NPN 60V 15A TO3
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    Microchip Technology Inc 2N3055

    TRANS NPN 70V 15A TO3
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    Verical 2N3055 55 1
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    Arrow Electronics 2N3055 55 36 Weeks 1
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    Microchip Technology Inc 2N3055 1
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    Onlinecomponents.com 2N3055
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    NAC 2N3055 Tray 7
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    Master Electronics 2N3055
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    NTE Electronics Inc 2N3055

    TRANS NPN 60V 15A TO204
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    TME 2N3055 1
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    Find more 2N3055 price and stock on Findchips.com

    2N3055 Datasheets (239)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N3055 Comset Semiconductors Epitaxial-Base NPN Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 Micro Commercial Components TRANS GP BJT NPN 60V 10A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 Microsemi NPN power silicon transistor. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 Motorola 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 On Semiconductor General Purpose Bipolar Transistor, NPN, 60V, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 On Semiconductor Complementary Silicon Power Transistors - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 Semelab NPN power transistor, 100V, 15A - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 STMicroelectronics Complementary power transistors Original PDF
    2N3055 STMicroelectronics Complementary power transistors Original PDF
    2N3055 STMicroelectronics TRANS GP BJT NPN 60V 15A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 Transys Electronics SILICON PLANAR POWER TRANSISTORS Original PDF
    2N3055 USHA High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 USHA NPN silicon power transistor. 15 Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 Various Russian Datasheets Transistor Original PDF
    2N3055 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N3055 API Electronics 15 AMPS / 20 AMPS NPN Transistors Scan PDF
    2N3055 API Electronics Short form transistor data Short Form PDF
    2N3055 API Electronics Short form transistor data Short Form PDF
    ...

    2N3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3055A

    Abstract: Vce(sat) MJ2955A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055A DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A


    Original     		PDF 2N3055A MJ2955A 2N3055A Vce(sat) MJ2955A

    2N3055HV

    Abstract: transistor 2N3055hv
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055HV NPN POWER TRANSISTOR TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Open Emitter


    Original     		PDF 2N3055HV C-120 2N3055HVRev110302D 2N3055HV transistor 2N3055hv

    2n3055

    Abstract: 2N3055-7 equivalent transistor 2n3055 JANTX 2n3055 2N3055 semelab
    Text: 2N3055/7 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N3055/7 O204AA) 31-Jul-02 2n3055 2N3055-7 equivalent transistor 2n3055 JANTX 2n3055 2N3055 semelab

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION


    Original     		PDF 2N3055 MJ2955 C-120 MJ2955Rev291201E

    2N3055-6

    Abstract: 2n3055 2N3055 to3 JANTX 2n3055 VCEO100V
    Text: 2N3055/6 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N3055/6 O204AA) 31-Jul-02 2N3055-6 2n3055 2N3055 to3 JANTX 2n3055 VCEO100V

    Untitled

    Abstract: No abstract text available
    Text: ., {Jnc, <Se.ml-C.onJiu.ctoi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212) 227-6005 FAX: (201) 376-8960 2N3055 NPN SILICON POWER TRANSISTOR •MAXIMUM RATINGS Symbol Riling . Unit V.lu, ^CollMtor-Emlimr Voltao» VCEO 6O


    Original     		PDF 2N3055

    Untitled

    Abstract: No abstract text available
    Text: c^ Jstisii*/ <£s.m.i-(lon.<Licko\ Una. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN 2N3055A Complementary Silicon High-Power TVansistors MJ15015 . . PowerBase complementary transistors designed for high


    Original     		PDF 2N3055A MJ15015 2N3055 MJ2955. MJ2955A MJ15016 TQ-204AA 550REF

    Untitled

    Abstract: No abstract text available
    Text: c3\£. , LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3055C N-P-N SILICON POWER TRANSISTOR ELECTRICAL CHARACTERISTICS (Tcai. = 25 °C unless otherwise specified) Test conditions Parameter


    Original     		PDF 2N3055C 100mA 200mA

    2n3055 malaysia

    Abstract: Mj2955
    Text: 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector-emitter saturation voltage TAB • Complementary NPN - PNP transistors Applications • General purpose 1 • Audio amplifier 2 Description TO-3 Figure 1.


    Original     		PDF 2N3055, MJ2955 2N3055 DocID4079 2n3055 malaysia Mj2955

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055HV NPN POWER TRANSISTOR TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Open Emitter


    Original     		PDF 2N3055HV C-120 2N3055HVRev110302D

    pmd10K80

    Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


    Original     		PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 pmd10K80 PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88

    Untitled

    Abstract: No abstract text available
    Text: 2N3055A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N3055A O204AA) 18-Jun-02

    MJ15016

    Abstract: 2N3055AG MJ15015 2N3055A MJ15015G MJ15016G 2N3055 NPN Transistor 2N3055 2N3055A 2n3055 MJ-15016
    Text: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These


    Original     		PDF 2N3055A MJ15015 MJ15016 MJ15015 MJ15016 2N3055. O-204AA 2N3055AG 2N3055A MJ15015G MJ15016G 2N3055 NPN Transistor 2N3055 2N3055A 2n3055 MJ-15016

    2N3055

    Abstract: MJ2955 TRANSISTOR MJ2955 2N3055 MEXICO pnp transistor 2N3055 t 2N3055 2N3055 MJ2955 Transistor MJ2955 MJ2955 mexico 2N3055 JAPAN
    Text: 2N3055 MJ2955  COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series


    Original     		PDF 2N3055 MJ2955 2N3055 MJ2955. MJ2955 TRANSISTOR MJ2955 2N3055 MEXICO pnp transistor 2N3055 t 2N3055 2N3055 MJ2955 Transistor MJ2955 MJ2955 mexico 2N3055 JAPAN

    2N3055

    Abstract: 2N3055-1 2N3055/1 2n3055 circuit 2n3055 amplifier 2N3055 power amplifier circuit 2N3055 power circuit 2N3055 TO-3 hfe 2n3055 2n3055 IC
    Text: HIGH POWER TRANSISTOR NPN 2N3055 15A 115W Technical Data …designed for general-purpose switching and amplifier application. F DC Current Gain - h FE = 20 – 70 @ IC = 4Adc F Collector-Emitter Saturation Voltage – VCE sat = 1.1 Vdc (Max) @ IC = 4Adc F Excellent Safe Operating Area


    Original     		PDF 2N3055 2N3055) 2N3055 2N3055-1 2N3055/1 2n3055 circuit 2n3055 amplifier 2N3055 power amplifier circuit 2N3055 power circuit 2N3055 TO-3 hfe 2n3055 2n3055 IC

    texas 2n3055

    Abstract: BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955* Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


    Original     		PDF 2N3055 MJ2955* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C texas 2n3055 BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100

    TEXAS 2N3055

    Abstract: 2N3055 transistor 2N3055 2N3055 silicon
    Text: TYPE 2N3055 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR FOR POWER-AMPLIFIiR APPLICATIONS • 115 W a t 25°C Case T e m p e ra tu re • Max lc of 15 A • Min fhf* of 20 kHz * m e c h a n ica l d a ta ALL JEDEC TO-3 D IM EN SIO N S A N D N O TES ARE APPLICABLE


    OCR Scan     		PDF 2N3055 TEXAS 2N3055 2N3055 transistor 2N3055 2N3055 silicon

    ZENER 2V7

    Abstract: J 2N3055 2n3055 general purpose 2n3055 transistors J1N4150 J-BDX64 1N457/A 4446 BDX66 BZX85 C27
    Text: chips/pastilles power transistors transistors de puissance THOMSON-CSF P Types h2i E VCE min. NPN W PNP 117 117 60 90 117 J-2N3055 J-BDX J-BDX J-BDX J-BDX 53 63 65 67 J-BDX18 J-BDX54 J-BDX62 J-BDX64 J-BDX66 ISO (V) 45 60 60 60 20 20 750 1000 1000 1000 60


    OCR Scan     		PDF J-2N3055 J-BDX18 J-BDX54 J-BDX62 J-BDX64 J-BDX66 j-1n457 ZENER 2V7 J 2N3055 2n3055 general purpose 2n3055 transistors J1N4150 1N457/A 4446 BDX66 BZX85 C27

    TIP 2n3055

    Abstract: transistor tip 5530 tip 147 TRANSISTOR equivalent TIP 122 transistor TIP 41 transistor transistor tip 3055 TIP 122 transistor APPLICATION NOTES transistor TIP 42 tip 127 TRANSISTOR equivalent TRANSISTOR tip 127
    Text: T Y P E TIP3055 N-P-N SIN G LE-D IFFU SED M ESA SILICON POWER TRAN SISTO R FO R POWEiR A M P L IF IE R A N D H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S P L A S T IC -C A S E R E P L A C E M E N T F O R 2N3055 • 90 Watts at 25°C Case Temperature


    OCR Scan     		PDF TIP30S5 2N3055 TIP 2n3055 transistor tip 5530 tip 147 TRANSISTOR equivalent TIP 122 transistor TIP 41 transistor transistor tip 3055 TIP 122 transistor APPLICATION NOTES transistor TIP 42 tip 127 TRANSISTOR equivalent TRANSISTOR tip 127

    2N30S5

    Abstract: 2N305
    Text: 2N3055A 2N3055A NPN POWER TRANSISTOR High Power Audio, Stepping Motor and Other Linear Applications DIM A B C D E F G H J K I M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15 11,15 12,25 26,67 3,84 4,19 - PIN CONFIGURATION


    OCR Scan     		PDF 2N3055A 2N30S5A 2N30S5 2N305

    2N3055E specification

    Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
    Text: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349


    OCR Scan     		PDF ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3055E specification 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package

    2N3442

    Abstract: 2N5875 NPN Transistor 2N3055 darlington 2N3055 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790
    Text: Pow er Transistors TO-3 Case TYPE NO. •c Pd BVc b O b v C e o @ Ic hFE VCE SAT @ <c *TYP (A) NPN 2N3055 PNP MJ2955 2N3442 (W) MAX 15 115 (A) (V) (V) MIN MIN MIN 100 60 5.0 — 00 (A) 10 (MHZ) MIN MAX MAX fT *TYP 3.0 10 2.5 . 10 117 160 140 20 70 3.0 5.0


    OCR Scan     		PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 2N3442 2N5875 NPN Transistor 2N3055 darlington

    2n3055

    Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR
    Text: COMPLEMENTARY SILICON POWER TRANSISTORS NPN 2N3055 .designed for use in general-purpose amplifier and switching applications PNP MJ2955 Boca Semiconductor Corp. BSC FEATURES: * Power Dissipation - PD = 115W @ Tc = 25°C * DC Current Gain hFE = 20 ~ 70 @ lc = 4.0 A


    OCR Scan     		PDF 2N3055 MJ2955 MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR

    Westinghouse Semiconductor

    Abstract: westinghouse transistors 2n3055 voltage regulator westinghouse 2N3055
    Text: POüJEREX INC TD 54-673 Page 1 i Silicon Power Transistors J E D E C T y p e 2N3055 Westinghouse ö > H > co For Switching Amplifier and Regulator Applications 15 Amperes, 115 Watts IV sQ X m m Application The Westinghouse 2N3055 is an NPN dif­ fused transistor. This general-purpose tran­


    OCR Scan     		PDF 2N3055 2N3055 C/2116/DB; C/2117 Westinghouse Semiconductor westinghouse transistors 2n3055 voltage regulator westinghouse 2N3055