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    2N3053 NPN TRANSISTOR HFE Search Results

    2N3053 NPN TRANSISTOR HFE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    2N3053 NPN TRANSISTOR HFE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3055 TO220

    Abstract: NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors transistor BC107 specifications tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors transistor 2n3053 DATASHEET Transistor BC107 2N3055 NPN Transistor
    Text: TRANSISTOR SPECIFICATIONS - A TYPICAL TABLE FROM A CATALOGUE Transistor Polarity Number BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 Case IC max VCE hFE Power NPN NPN NPN NPN NPN NPN NPN NPN Style TO18 TO18 TO92 E-line TO39 TO39 TO220 TO3 mA 100


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    PDF BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 BC178 BC559 2N3055 TO220 NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors transistor BC107 specifications tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors transistor 2n3053 DATASHEET Transistor BC107 2N3055 NPN Transistor

    2N3053 NPN transistor

    Abstract: 2n3053 SILICON TRANSISTOR 2N3053 transistor 2n3053 2n3053 transistor 2N3053A NPN Transistor 2n3053 2N3053 NPN transistor hfe
    Text: 2N3053 2N3053A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3053, 2N3053A types are epitaxial planar NPN silicon transistors designed for general purpose applications. MARKING: FULL PART NUMBER TO-39 CASE


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    PDF 2N3053 2N3053A 2N3053, 100mA, 150mA, 2N3053 NPN transistor SILICON TRANSISTOR 2N3053 transistor 2n3053 2n3053 transistor NPN Transistor 2n3053 2N3053 NPN transistor hfe

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3053 / 2N3053A TO-39 Metal Can Package General Purpose Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VCEO Collector Emitter Voltage


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    PDF 2N3053 2N3053A 2N3053 C-120 040406E

    transistor 2n3053

    Abstract: pin configuration 2N3053 transistor 2N3053, TO-39 PACK 2N3053 NPN transistor 2N3053 2N3053 equivalent 2N3053 transistor 2N3053A
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3053 / 2N3053A TO-39 Metal Can Package General Purpose Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VCEO Collector Emitter Voltage


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    PDF 2N3053 2N3053A 2N3053 C-120 040406E transistor 2n3053 pin configuration 2N3053 transistor 2N3053, TO-39 PACK 2N3053 NPN transistor 2N3053 equivalent 2N3053 transistor 2N3053A

    transistor 2n3053

    Abstract: No abstract text available
    Text: 2N3053 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCEO = 40V


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    PDF 2N3053 O-205AD) 2N3053A" 2N3053A 100MHz transistor 2n3053

    transistor 2n3053

    Abstract: 2N3053 NPN transistor 20MH 2N3053
    Text: 2N3053 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Medium Power Silicon NPN Planar Transistor VCEO=40V IC=0.7A Ptot=1.0W Rth jc is 35OC/W, Rth(ja) is 175OC/W Maximum Ratings Symbol V CEO


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    PDF 2N3053 35OC/W, 175OC/W 15Adc, 10Vdc) 150mAdc, 15mAdc) 10Vdc, transistor 2n3053 2N3053 NPN transistor 20MH 2N3053

    transistor 2n3053

    Abstract: 2N3053 NPN transistor SILICON TRANSISTOR 2N3053 NPN Transistor 2n3053 2N3053
    Text: MEDIUM POWER SILICON NPN TRANSISTOR 2N3053 • Low Leakage Current, High Transition Frequency FT = 100MHz Typ. • Hermetic TO-39 Metal Package. • Ideally Suited For Medium Current Switching And Amplifier Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


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    PDF 2N3053 100MHz O-205AD) transistor 2n3053 2N3053 NPN transistor SILICON TRANSISTOR 2N3053 NPN Transistor 2n3053 2N3053

    2N3053

    Abstract: No abstract text available
    Text: MEDIUM POWER SILICON NPN TRANSISTOR 2N3053 • Low Leakage Current, High Transition Frequency FT = 100MHz Typ. • Hermetic TO-39 Metal Package. • Ideally Suited For Medium Current Switching And Amplifier Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


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    PDF 2N3053 100MHz O-205AD) 2N3053

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N3053 Features • • • • • Medium Power Silicon NPN Planar Transistor VCEO=40V IC=0.7A Ptot=1.0W


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    PDF 2N3053 35OC/W, 175OC/W

    SILICON TRANSISTOR 2N3053

    Abstract: transistor 2n3053 transistor 335
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N3053 Features • • • • Medium Power Silicon NPN Planar Transistor VCEO=40V IC=0.7A Ptot=1.0W Rth jc is 35OC/W, Rth(ja) is 175OC/W


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    PDF 2N3053 35OC/W, 175OC/W 15Adc, 10Vdc) 150mAdc, 15mAdc) 10Vdc, SILICON TRANSISTOR 2N3053 transistor 2n3053 transistor 335

    transistor 2n3053

    Abstract: 2N3053 equivalent
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2N3053 Features • • • • Medium Power Silicon NPN Planar Transistor VCEO=40V IC=0.7A Ptot=5.0W Rth jc is 35OC/W, Rth(ja) is 175OC/W


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    PDF 2N3053 35OC/W, 175OC/W 15Adc, 10Vdc) 150mAdc, 15mAdc) 10Vdc, transistor 2n3053 2N3053 equivalent

    Untitled

    Abstract: No abstract text available
    Text: 2N3053 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA AMPLIFIER TRANSISTOR * Collector-Emitter VoMags ; Vceo=40V * Collector Dissipation: Pc max =625 mW ABSOLUTE MAXIMUM RATINGS at Tamb=25'C C haracteristic


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    PDF 2N3053 300uS, 100uA

    2N3053 NPN transistor

    Abstract: SILICON TRANSISTOR 2N3053 transistor 2n3053 2N3053 2N3053 transistor 2N3053A cev code
    Text: Data Sheet 2N3053 2N3053A Cont nlll • «r ri NPN SILICON TRANSISTOR Sem iconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE M anufacturers of W orld C lass Discrete Semiconductors DESCRIPTION


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    PDF 2N3053 2N3053A 2N3053, 2N3053A 2N3053 100mA, 100hA 100mA 150mA, 2N3053 NPN transistor SILICON TRANSISTOR 2N3053 transistor 2n3053 2N3053 transistor cev code

    2N310B

    Abstract: 2N2270
    Text: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*


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    PDF 2N718A 2N720A 2N915 2N916 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N310B 2N2270

    2M1711

    Abstract: 2N915 2N1613 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N718A 2N720A
    Text: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptal mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 VCE(SAT) hFE0 c h (MHz) ts tOFF IC/IB MNMAX (•A) <V) MAX 50* 80 50 40 40/120 40/50/200 50/200 150 150 10 10


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    PDF 2N718A 2N720A 2N915 2N916 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2M1711 2N1613

    RCA 40411 transistor

    Abstract: rca 40411 BUX18 transistor RCA 40872 audio amplifier with rca 40411 2n3283 RCA 40349 2N5320 transistor RCA 383 2n6354
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 MHz . . . I r to 60 A . . . Pr to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A MX. P j « 7 W m ax . (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037 i c ■ 2 A m ax.


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    PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 RCA 40411 transistor rca 40411 BUX18 transistor RCA 40872 audio amplifier with rca 40411 2n3283 RCA 40349 2N5320 transistor RCA 383 2n6354

    2N3053 NPN transistor

    Abstract: 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N2893 2N2894 2N2894A 2N2894ACSM 2N2894AQF 2N2894CSM 2N2894DCSM 2N2895 2N2896 2N2904 2N2904A 2N2904AL 2N2904L 2N2905 2N2905A 2N2905AL 2N2905L 2N2906 2N2906 CECC 2N2906A 2N2906A CECC 2N2906ACSM


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    PDF 250mW 80min 30min 40min 4/30m 10/10m 360mW 2N3053 NPN transistor 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917

    transistor t05

    Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
    Text: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A


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    PDF 5flMfl35g DETRdf\J515TQR 2N327A N328A 2N329A 2N330 2N726 2N863 2N939 2N945 transistor t05 N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058

    2N3055 RCA

    Abstract: RCA 40852 transistor RCA 41013 2N3772 RCA 2N3442 RCA RCA 2N3055 transistor TX2N3440 BU106 transistor BF 257 RCA H 410
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . fy to 20 M H z . . . P t to 175 W •c pm k - lc = 1 0 A Py T .V . Application = 75 •100W Switching 130 x 130 1 3 0 x 130 BU 106 2N 5840 [N-P-N] 2N 5240 [N-P-N] BU 106 Va o sus =l40V hFE.:8 ;"0) / 4 A


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    PDF lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N3055 RCA RCA 40852 transistor RCA 41013 2N3772 RCA 2N3442 RCA RCA 2N3055 transistor TX2N3440 BU106 transistor BF 257 RCA H 410

    RCA 40411 transistor

    Abstract: audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 MHz . . . Ir to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W max. TO-39 * le * - 1 A MX. P j « 7 W max. (T O - » ) • ic ■ 2 A max. P j “ 10 f t max. (TO-39) ft 30 x 30* 30x30 2N2102 (N-P-N]


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    PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 RCA 40411 transistor audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411

    transistor 2n3053

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE D bbSBTBl 002fll3b Eflb I IAPX 2N30b3 A SILICON PLANAR TRANSISTOR N-P-N transistor in a TO-39 metal envelope designed for medium speed, saturated and non-saturated switching applications for industrial service. QUICK REFERENCE DATA


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    PDF 002fll3b 2N30b3 transistor 2n3053

    2N2464

    Abstract: TO-59 Package TO114 package SIS 672 2N2210 transistor 2N2210 TO111 package TO61 package 2N3725 ultra low noise NPN transistor
    Text: SME D GENERAL TRANSISTOR CORP BTaöODl 00QG07M Q General Transistor Corporation 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL SIGNAL TRANSISTORS NPN General Purpose Typ» No, Plot (mW) VCEO


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    PDF 3T5fl001 2N720A 2N915 2N916 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N2464 TO-59 Package TO114 package SIS 672 2N2210 transistor 2N2210 TO111 package TO61 package 2N3725 ultra low noise NPN transistor

    2N2464

    Abstract: transistor 2n2270 2N6369 D 756 transistor
    Text: GENERAL TRANSISTOR CORP 2ME D • BTaflODl 00QD074 0 ■ General Transistor Corporation "T 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL S IG N A L TRANSISTORS NPN General Purpose Typ» No,


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    PDF 00QD074 100TT T0-102 2N2464 transistor 2n2270 2N6369 D 756 transistor

    rca 40410

    Abstract: rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C to 30 A . . •c pm k - 12 A lc = 10A Py =7 5 •100W Switching Linear 130 x 130 130 x 130 1 3 0 x 130 BU106 2N5840 [N-P-N] 2N 52 40 [N-P-N] BU106 2N5838 Va o sus =l40V VCER(sus) =275 V hFE = 20min. hFE.:8 ;" 0) /


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    PDF lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 rca 40410 rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA