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    2N3053, TO-39 PACK Search Results

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    TE Connectivity K62C881

    Electromechanical Relay 26.5VDC 125Ohm 18A SPDT Threaded Mount Voltage Relay
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    Bulgin PXM7088/0507

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    TE Connectivity 3SBC1623A2

    3SBC1623A2=M39016/37-023L
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    TE Connectivity 6-1393768-9

    R10-E7P4-J1.0K=R10
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    TE Connectivity R10-E7P4-J1.0K

    Power Relay
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    2N3053, TO-39 PACK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3053

    Abstract: 2N3053 equivalent transistor 2n3053 2N3053 NPN transistor 2N3053, TO-39 PACK 2N3053A
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTORS 2N3053 2N3053A TO-39 General Purpose, Medium Current Amplifier Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N3053 VCEO 40 Collector -Emitter Voltage 1


    Original     		PDF ISO/TS16949 2N3053 2N3053A 100mA 300us, C-120 2N3053 2N3053 equivalent transistor 2n3053 2N3053 NPN transistor 2N3053, TO-39 PACK 2N3053A

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3053 / 2N3053A TO-39 Metal Can Package General Purpose Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VCEO Collector Emitter Voltage


    Original     		PDF 2N3053 2N3053A 2N3053 C-120 040406E

    transistor 2n3053

    Abstract: pin configuration 2N3053 transistor 2N3053, TO-39 PACK 2N3053 NPN transistor 2N3053 2N3053 equivalent 2N3053 transistor 2N3053A
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3053 / 2N3053A TO-39 Metal Can Package General Purpose Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VCEO Collector Emitter Voltage


    Original     		PDF 2N3053 2N3053A 2N3053 C-120 040406E transistor 2n3053 pin configuration 2N3053 transistor 2N3053, TO-39 PACK 2N3053 NPN transistor 2N3053 equivalent 2N3053 transistor 2N3053A

    Untitled

    Abstract: No abstract text available
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTORS 2N3053 2N3053A TO-39 General Purpose, Medium Current Amplifier Applications.


    Original     		PDF 2N3053 2N3053A C-120

    transistor 2n3053

    Abstract: 2N3053 NPN transistor SILICON TRANSISTOR 2N3053 NPN Transistor 2n3053 2N3053
    Text: MEDIUM POWER SILICON NPN TRANSISTOR 2N3053 • Low Leakage Current, High Transition Frequency FT = 100MHz Typ. • Hermetic TO-39 Metal Package. • Ideally Suited For Medium Current Switching And Amplifier Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF 2N3053 100MHz O-205AD) transistor 2n3053 2N3053 NPN transistor SILICON TRANSISTOR 2N3053 NPN Transistor 2n3053 2N3053

    2N3053

    Abstract: No abstract text available
    Text: MEDIUM POWER SILICON NPN TRANSISTOR 2N3053 • Low Leakage Current, High Transition Frequency FT = 100MHz Typ. • Hermetic TO-39 Metal Package. • Ideally Suited For Medium Current Switching And Amplifier Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF 2N3053 100MHz O-205AD) 2N3053

    2N3053

    Abstract: 2n3053 motorola motorola 2n3053 transistor motorola 2n3053 transistor 2n3053 2N3053 equivalent C2N3053 2N3053A
    Text: MOTOROLA Order this document by 2N3053/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3053 2N3053A NPN Silicon 2 BASE 1 EMITTER MAXIMUM RATINGS LIFETIME BUY Rating Symbol 2N3053 2N3053A Unit VCEO 40 60 Vdc Collector – Base Voltage


    Original     		PDF 2N3053/D 2N3053 2N3053A 205AD) 2N3053/D* 2N3053 2n3053 motorola motorola 2n3053 transistor motorola 2n3053 transistor 2n3053 2N3053 equivalent C2N3053 2N3053A

    BCY78

    Abstract: BC107 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59
    Text: N P N LOW LEV EL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BCY78 2N1131 2N1132 2N4037 BC177

    BC16

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib h FE Min. Max. 50 250 Min f T at at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW m A MH z m A 150 100 50 1000 TO-39 2N4037 150 80 50 600 TO-39 2N1131 150 100


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BC16 2N1131 2N1132 2N4037 BC177

    TRANSistor BC108

    Abstract: 2n4001 TRANSISTOR TRANSISTOR BC140 Transistor BC177 applications of Transistor BC108 2N40361 Transistor BCY58 2N3419 2N1132 2N3053
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib h FE Min. Max. 50 250 Min f T at at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW m A MH z m A 150 100 50 1000 TO-39 2N4037 150 80 50 600 TO-39 2N1131 150 100


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 TRANSistor BC108 2n4001 TRANSISTOR TRANSISTOR BC140 Transistor BC177 applications of Transistor BC108 2N40361 Transistor BCY58 2N3419 2N1132

    2N1131

    Abstract: 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20 60


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2N1131 2N1132 2N4037 BC177 BCY79

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    BCY56

    Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 BCY59A 2N1131 2N1132 2N4037 BC177

    BSY52

    Abstract: BCY56 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    transistor 2n3053

    Abstract: bc140 transistor BC108 ZT152 complement of 2N3053 bc141 2N2102 2N4036 BC161 BCY65E
    Text: PNP GENERAL PURPOSE TA B LE2 PNP SILICO N PLA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


    OCR Scan     		PDF ZT184 BCY79 1000t BCY59 BCY71 ZT181 ZT182 bc160 3700t BC140 transistor 2n3053 bc140 transistor BC108 ZT152 complement of 2N3053 bc141 2N2102 2N4036 BC161 BCY65E

    Untitled

    Abstract: No abstract text available
    Text: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple­ ment mW 2N3053 60 40 700 1.4


    OCR Scan     		PDF 000bt 2N3053 2N696 2N697 BFY51 BSY51 BSY52 BC107 BCY59 BCY56

    2N696

    Abstract: 2n706 BC178 BC107 bc107 complement 2N1131 2N1132 2N4037 2N697 BC177
    Text: NPN G EN ER A L P U R P O S E - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO -39 2N4037


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2n706 BC178 bc107 complement 2N1131 2N1132 2N4037 BC177

    BCY69

    Abstract: 2t80 GQ017
    Text: ZETEX SEMICONDUCTORS 32C D H ^70570 GQ017S7 3 2 C 0 1757 D ! 2 ~ ~ T ~ Z 7 -ô L_ NPN G EN ER A L PU R P O S E - Continued Type Vc b Max VCEO lc V V mA Max VcE sat at V hFE lc mA Ib mA M in fj at at Ptat a* *l"amb Package =25°C Min Max lc lc mA MHz mA mW


    OCR Scan     		PDF GQ017S7 1000t 2N4037 2N1131 2N1132 BC177 BCY79 T0-18 GDD17b7 BCY69 2t80 GQ017

    N706A

    Abstract: 2N2368 2N2475 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Max Vc b V c e O ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at Pto t at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 N706A 2N2368 2N2475 2N1131 2N1132 2N4037 BC177

    2n2222 itt

    Abstract: BSY86 ME6002 ME6102 BFY72 MA8003 fairchild semiconductors 2n2222 micro electronics ME8003 BFY50
    Text: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N PN Silicon High Speed Saturated Switching Transistors M etal Can T O IS REFERENCE T A B LE For medium speed - see General Purpose S ection. C H A R A C TE R IS TIC S @ 25"C


    OCR Scan     		PDF BSX20 35250H BSX26 35251F 2N914 35252D 2N2369 35253B 2N2369A 35254X 2n2222 itt BSY86 ME6002 ME6102 BFY72 MA8003 fairchild semiconductors 2n2222 micro electronics ME8003 BFY50

    Untitled

    Abstract: No abstract text available
    Text: 32C D cl ci 7 D S 7 ö I 0 D 01 7 5 Ö H • Z ET B ^ ZETEX SEMICONDUCTORS PNP GENERAL PURPOSE TABLE 2 PNP SILICON PLANAR GENERAL PURPOSETRANSISTORS T h e d e v ic e s sh o w n in th is ta b le are general p urp ose tran sistors d e sig n e d fo r sm a lla n d m edium


    OCR Scan     		PDF BC108 GDD17b7 T-91-20

    BCY78

    Abstract: 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BCY78 2N1131 2N1132 2N4037 BC177 BCY79

    N3053

    Abstract: BC107 2N1131 2N1132 2N4037 2N696 2N697 BC177 BCY59 BCY79
    Text: NPN G EN ER A L P U R P O SE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2N1131 2N1132 2N4037 BC177 BCY79