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    2N2586 Search Results

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    Texas Instruments 2N2586

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    Bristol Electronics 2N2586 18
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    2N2586 6 1
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    Quest Components 2N2586 4
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    GTCAP 2N2586

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    Quest Components 2N2586 76
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    National Semiconductor Corporation 2N2586

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    Quest Components 2N2586 11
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    2N2586 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2586 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    2N2586 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N2586 Central Semiconductor NPN METAL-CAN SATURATED SWITCH / LOW NOISE LEVEL AMPLIFIER Scan PDF
    2N2586 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N2586 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N2586 Fairchild Semiconductor NPN low level low noise type. Scan PDF
    2N2586 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N2586 Micro Electronics Semiconductor Devices Scan PDF
    2N2586 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2586 Motorola Low Level and General Purpose Amplifiers Scan PDF
    2N2586 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2586 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2586 Unknown Transistor Replacements Scan PDF
    2N2586 Unknown GE Transistor Specifications Scan PDF
    2N2586 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N2586 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2586 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2586 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2586 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N2586 Unknown Shortform Electronic Component Datasheets Short Form PDF

    2N2586 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n2586

    Abstract: No abstract text available
    Text: 2N2586 NPN low level low noise type. 14.08 Transistors Transistors Bip. 1 of 2 Home Part Number: 2N2586 Online Store 2N2586 Diodes NPN lo w lev el lo w no is e t y pe. Transistors Enter code INTER3 at


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    PDF 2N2586 com/2n2586 2N2586

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


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    PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390

    JAN2N760A

    Abstract: 2N3692 2n2510 2N3565
    Text: N PN Transistors low I vel amps TVpe Case No Styla VCEO "eso IV! IV! M,n MIn IV! [ M,n Vcso MIn MIX VCEI . t VSEI .t! IV! 80 IV! Ma. NF Cob IpF! IdS! MIX Ma. Ma. 06 1.1 10 50 1 1 Test CondItIon Process No. 2N760 TO•18 45 45 200 30 76 333 1 5 2N760A TO'18


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    PDF 2N760 2N760A JAN2N760A 2N929 JAN2N929 157kHz 2N3692 2n2510 2N3565

    DIAC DB2

    Abstract: BD469 C2N3904 pin configuration transistor BC547 smd packaging C2N5551 cbc337 D1 DB2 Diac SMD SOT23 transistor MARK Y2 A1941 1N4007 MINI MELF
    Text: Quick Reference Data Wafer Fabrication Surface Mounted Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors Power Transistors


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    PDF C-120 OT-23 OT23-6L DO-213AB DO-214AC DO-214AA OT-223 O-252 DIAC DB2 BD469 C2N3904 pin configuration transistor BC547 smd packaging C2N5551 cbc337 D1 DB2 Diac SMD SOT23 transistor MARK Y2 A1941 1N4007 MINI MELF

    2n5183

    Abstract: BC187 Small Signal Transistors TO-18 Case
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


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    PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A 2n5183 BC187 Small Signal Transistors TO-18 Case

    2N2711

    Abstract: No abstract text available
    Text: Low Level and General Purpose Amplifiers H,re CASI 2N929A 2N930 2N930A 2N2511 2N2586 N N N N N TO-18 TO-18 TO-18 TO-18 TO-18 500 500 500 360 300 30 30 30 200 100 45 45 45 50 45 45 100 100 240 120 2N2605 2N2711 SN2712 2N2714 2N2716 P N N N N TO-18 TO-92B TO-92B


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    PDF 2N929A 2N930 2N930A 2N2511 2N2586 2N2605 2N2711 SN2712 2N2714 2N2716

    2N25

    Abstract: 2n2586
    Text: IFAIRCHILD SEMICONDUCTOR j 3469674 FAIRCHILD fi4 D E | 3 4 b c]ia74 0D57534 SEMICONDUCTOR 84D 27 53 4 D1 «23 f a S c h ild 2N2586 wmmmamsmsm. NPN Low Level Low Noise Type T~ A S c h lu m b e rg e r C o m p a n y ABSOLUTE MAXIMUM RATINGS Note 1 Temperatures


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    PDF 0D57534 2N2586 10/uA, 10kHz 2N25 2n2586

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    UM9C

    Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
    Text: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma


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    PDF DDDQS16 2N2242 2N2368 2N2369 2N2369A 2N2410 N2475 2N2481 2N2501 2N2651 UM9C J 2N930 2N2651

    BCY59-9

    Abstract: bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719 2N720 2N720A
    Text: TO-18 METAL-CAN PACKAGE TRANSISTORS NPN E le c tric a l C h a ra c te ris tic s M a x im u m R a tin g s Typ* N o. VCBO (V) Min V CEO V EBO *CBO (V) Min (V) Min (^A ) Ma ' V CB hFE 0.100 10.0 10.0 10.0 1.20 5.00 0.90 1.30 50 150 15 150.0 10.0 10.0 10.0


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    PDF 2N720 2N720A 2N912 2N2S09 2N2368 2N2369 2N2369A 2N2615 2N2616 2N783 BCY59-9 bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719

    MPS9631

    Abstract: T1S91 MPS9632 MPS9630 TIS92 MPS9633 SE4010 TIS61 MPS9600 MPS9634
    Text: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY MPS9600 MPS9601 MPS9602 MPS9630 MPS9631 N N N N N CASE TO-92A TO-92A TO-92A TO-92A TO-92A VCE sat HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max 300 300 300 350 350 100 100 100 100 100 12


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    PDF MPS9600 O-92A MPS9601 MPS9602 MPS9630 MPS9631 T1S91 MPS9632 TIS92 MPS9633 SE4010 TIS61 MPS9634

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


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    PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    2N2483

    Abstract: 2N2484 2N2586 2N2897 2N3117 2N3647 2N3700 2N6430 2N706 2N706A
    Text: Maximum Ratings Type No. 2N2483 VC0O V Min ^CEO ^EBO (V) Min (V) Min 60 60 6 Po (W) Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (A) ^CM 'cBO ^C B (A) (PA) Max e (V) 0.01 45 Tc=25°c 0.36 0.05 ^CES ^CE "re @ 'c & (mA) (MA) 0 (V) Max


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    PDF 2N2483 2N2484 2N718A 2N720 2N720A 2N834 2N910 2N911 2N2586 2N2897 2N3117 2N3647 2N3700 2N6430 2N706 2N706A

    BCY591

    Abstract: BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration
    Text: PIN CONFIGURATION 1. Emitter 2. B ase 3. Collector DIM MIN MAX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 1,27 G - 2,97 0,76 H 0,91 1,17 J K 0,71 1,21 L 45D EG 12,7 - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN Maximum Ratings


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    PDF BCY59-10 BFY76 BSX21 BSX48 BSY79 CIL351 CIL352 BCY591 BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


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    PDF 2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


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    PDF 00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    PDF

    cs9011j

    Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
    Text: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •


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    PDF 2N1507 2N1566 2NI613 2N1889 2N1890 2N1893 2N1973 2N1974 2NI975 O-237 cs9011j MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C

    2N339IA

    Abstract: No abstract text available
    Text: Low Level and General Purpose Amplifiers TY PE NO. PO LA ­ R IT Y M A X IM U M R A T IN G S CA SE Pd m W Ic (m A ) VcEO (V) H FE m in m ax Ic (m A ) V ce V CE(sat) m ax (V) (V) It m in Cob m ax Ic (m A ) (M H z) (M H z) N .F. m ax (dB ) MPSD06 MPSD56 N


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    PDF MPSD06 MPSD56 PN930 PN17I1 PN3548 PN3565 PN3566 PN3694 PN4249 PN4250 2N339IA

    2N760A JAN

    Abstract: 2N5856 2n3645 2n2510 2n5857 2N2509 2n760 2N5858
    Text: TRANSISTORS—SMALL SIGNAL PNP GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VCEO PLASTIC PACKAGE Continued (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) V CE(sat) ^F E V CEO *off PD w p Ta *V CER * h FE VOLTS TYPE D @ *c VOLTS @ lc pF


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    PDF 2N4354 2N3645 MPSA55 O-105 O-105 SE6020 2N760A JAN 2N5856 2n2510 2n5857 2N2509 2n760 2N5858

    2N2708

    Abstract: 2N760 2N327B 2N2511
    Text: LOW LEVEL AMPLIFIERS Electrical Characteristics @ 25 C M axim um Ratings Type NPN Pd Am bient mW PNP NF @ f V C E Sat @ l c / lß VcB V o lts VcE V olts V eb V o lts mA M in /M a x Case V o lts Geometry & Character­ ization Applicable Letter MOT. 2N327A


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    PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A 2N929 2N929A 2N2708 2N2511

    2n744

    Abstract: LM3661TL-1.40
    Text: Small signal Transistors TO-18 Case T Y P E NO. DESC RIPTIO N 00 V (V) (HA) MIN MIN MIN MAX *IC ES " IC E V @ 1C @ V C E V C E(SAT ) @ «C Cob hFE B V C B O B V C EO B V e b O C B O * V C B O <raA) (V) MIN M AX (V) (V) (mA) (PF) M AX M AX ton toff (ns) IT


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    PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A 2n744 LM3661TL-1.40