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    2N2369 MILITARY Search Results

    2N2369 MILITARY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F020-12/R Rochester Electronics LLC 28F020 - 256K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
    COM1553A/B Rochester Electronics LLC COM1553A/B - Mil-Std-1553B Smart Controller Visit Rochester Electronics LLC Buy
    MD28F020-90/R Rochester Electronics LLC 28F020 - 256K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
    MR28F010-90/R Rochester Electronics LLC 28F010 - 128K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
    MD28F010-90/R Rochester Electronics LLC 28F010 - 128K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy

    2N2369 MILITARY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2369

    Abstract: 2N2369At
    Text: 2N2369 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N2369 Availability Online Store


    Original     		PDF 2N2369 2N2369 STV3208 LM3909N 2N2369At

    Untitled

    Abstract: No abstract text available
    Text: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies


    Original     		PDF LT1671 LT1394, LT1016 LT1116 LT1016 LT1394 LT1720 1671fs,

    2N3866 application note

    Abstract: 2N5160 2N2369 transistor pulse generator LT1016 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8
    Text: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies


    Original     		PDF LT1671 LT1394, LT1016 LT1116 LT1016 LT1394 LT1720 1671f 2N3866 application note 2N5160 2N2369 transistor pulse generator LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8

    2N3866 application note

    Abstract: transistor 2n2369 LT1016 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8 Transistor 2N3866
    Text: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies


    Original     		PDF LT1671 LT1394, LT1016 LT1116 LT1016 LT1394 LT1720 1671fs, 2N3866 application note transistor 2n2369 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8 Transistor 2N3866

    micronote 103

    Abstract: 2n2369 avalanche Semiconductor Nuclear Radiation Detector GA102 DIODE ga101 UM9441 radiation ionizing dose TID detector Semiconductor Radiation Detector high sensitive neutron PIN diode pin diode gamma detector
    Text: MicroNote #050 by: Radiation Hardened Performance of Discrete Semiconductor Products Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military programs, but has now evolved to


    Original     		PDF

    pin diodes radiation detector

    Abstract: 2n2369 avalanche Semiconductor Nuclear Radiation Detector DIODE ga101 Semiconductor Radiation Detector radiation ionizing dose TID detector pin diodes nuclear radiation detector 1N829A 2N2369 2N3032
    Text: MicroNote #050 by: Radiation Hardened Performance of Discrete Semiconductor Products Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military programs, but has now evolved to


    Original     		PDF

    2N2369 avalanche

    Abstract: Microsemi micronote series 050 Semiconductor Nuclear Radiation Detector DIODE ga101 pin diodes radiation detector UM9441 Microsemi Generic Diode nuclear radiation detector diode GA100 radiation ionizing dose TID detector
    Text: Spring 1998 MicroNote Series 050 by Kent Walters, Microsemi Scottsdale Radiation Hardened Performance of Discrete Semiconductors Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military


    Original     		PDF

    2N2475

    Abstract: 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N929 2N930 BAW63 2N2369 FERRANTI BFS36
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N2475 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N2369 FERRANTI

    BFY52 equivalent

    Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BFY52 equivalent ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N2369 equivalent

    2N4427 equivalent

    Abstract: ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N4427 equivalent ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5

    BSS56

    Abstract: f025 ic marking z7 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BSS56 f025 ic marking z7

    BS9365

    Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
    Text: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6

    2N2222

    Abstract: 2N2904 2N2218 2N2219 transistor 2N2475 2N2219 2N2220 2N2221 2N2905 2N2906
    Text: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*


    OCR Scan     		PDF BFY51 2N2218 2N2904 2N2219 2N2905 2N2220 2N2221 2N2906 2N2222 2N2907 2N2904 2N2219 transistor 2N2475 2N2905 2N2906

    BFS36

    Abstract: BS9365 marking W4 NPN 2N2475 BFS37 f025 MARKING BS 2N929 2N930 BAW63
    Text: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A marking W4 NPN 2N2475 BFS37 f025 MARKING BS

    BC107 equivalent transistors

    Abstract: 2N2475 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302 BS9365
    Text: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC107 equivalent transistors 2N2475

    2N2102

    Abstract: 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89 2N2905A complement
    Text: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed sw itching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector


    OCR Scan     		PDF 2N3262 T0-39 T0-18 ZTX310 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N2102 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89 2N2905A complement

    2N2219 transistor

    Abstract: BSV16 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A 2N4036 BFX29
    Text: PNP SWITCHING TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector


    OCR Scan     		PDF T0-18 2N4036 2N2102 BFX30 ZTX310 2N2907A 2N2907 BCY70 BCY71 BCY72 2N2219 transistor BSV16 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A BFX29

    bcy79 equivalent

    Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bcy79 equivalent 2N3053 equivalent bcy78 equivalent 2N2905a equivalent f025

    2N2477

    Abstract: 2N2222 2N2219 transistor 2N2938 2N2221 2N2483 FF2221E FF2221J FF2222E FF2222J
    Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium


    OCR Scan     		PDF FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J 2N2907A 2N2477 2N2222 2N2219 transistor 2N2938 2N2483

    BC107 equivalent transistors

    Abstract: BC140 equivalent BCY71 BS 2N3053 equivalent marking 1801 2N929 2N930 BAW63 BAW63A BFS36
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. number* Page Type Device


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC107 equivalent transistors BC140 equivalent BCY71 BS 2N3053 equivalent marking 1801

    2N2102

    Abstract: 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86 ZT88
    Text: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR M E D IU M AN D HIGH SPEED SW ITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector Current


    OCR Scan     		PDF 2N3262 2N2907A 2N2907 2N2894 2N918 2N2102 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86 ZT88

    bc109 Transistor Equivalent list

    Abstract: npn transistor w6 2N2484 equivalent transistors transistor equivalent table bc109 transistor BC109 ZTX341 f021 2N930 BAW63 BFS36
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bc109 Transistor Equivalent list npn transistor w6 2N2484 equivalent transistors transistor equivalent table bc109 transistor BC109 ZTX341 f021

    ferranti 2N2222A

    Abstract: Ferranti ZT84 2N2102 2N3262 2N4036 BCY65E BCY77 BFX84 2N2894 ZT189
    Text: NPN SWITCHING T A B LE 3 - NPN SILICO N PLAN AR MEDIUM AND HIGH SP EED SW ITCH IN G T R A N SIST O R S The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector Current


    OCR Scan     		PDF 2N3262 2N2907A 2N2907 2N2894 2N918 ferranti 2N2222A Ferranti ZT84 2N2102 2N4036 BCY65E BCY77 BFX84 ZT189

    2N2477

    Abstract: 2N2219 transistor 2N2475 ZT184 2N2218 2N2219 2N2220 2N2221 2N2222 2N2904
    Text: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*


    OCR Scan     		PDF BFY51 2N2218 2N2904 2N2219 2N2905 2N2220 2N2221 2N2906 2N2222 2N2907 2N2477 2N2219 transistor 2N2475 ZT184 2N2904