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    2N0807

    Abstract: Q67060-S6082 Q67040-S4263 2n08 spp80n08s2-07 Q67040-S4264
    Text: Preliminary data OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 P-TO262-3-1 VDS 75 V RDS on max. SMD version 7.1 mΩ ID


    Original     		PDF SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPB80N08S2-07 SPI80N08S2-07 P-TO220-3-1 2N0807 Q67060-S6082 Q67040-S4263 2n08 Q67040-S4264

    2N0807

    Abstract: Q67060-S6082 s4264 2n08 120d-22 INFINEON PART MARKING to263 ANPS071E SPB80N08S2-07 SPI80N08S2-07 SPP80N08S2-07
    Text: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS Power-Transistor Product Summary Feature 75 VDS  N-Channel RDS on  Enhancement mode 175°C operating temperature  Avalanche rated max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 V 7.1 m 80 A P- TO220 -3-1


    Original     		PDF SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 SPP80N08S2-07 Q67040-S4263 2N0807 Q67040-S4264 2N0807 Q67060-S6082 s4264 2n08 120d-22 INFINEON PART MARKING to263 ANPS071E SPB80N08S2-07 SPI80N08S2-07

    2N0807

    Abstract: IPP80N08S2-07 IPB80N08S2-07 IPI80N08S2-07 2n08 SMD diode 132A PG-TO263-3-2 SP0002-19048 SP0002-19043
    Text: IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 7.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-19048 2N0807 2N0807 IPP80N08S2-07 IPB80N08S2-07 IPI80N08S2-07 2n08 SMD diode 132A PG-TO263-3-2 SP0002-19048 SP0002-19043

    2N0807

    Abstract: Q67040-S4263 66a smd Q67040-S4264 SPB80N08S2-07 SMD diode 132A S4264 SPP80N08S2-07 6020G
    Text: SPP80N08S2-07 SPB80N08S2-07 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode •=175°C operating temperature VDS 75 V RDS on max. SMD version 7.1 mΩ ID 80 A P-TO263-3-2 • Avalanche rated P-TO220-3-1


    Original     		PDF SPP80N08S2-07 SPB80N08S2-07 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4263 2N0807 P-TO263-3-2 2N0807 Q67040-S4263 66a smd Q67040-S4264 SPB80N08S2-07 SMD diode 132A S4264 SPP80N08S2-07 6020G

    2N0807

    Abstract: Q67060-S6082 SPB80N08S2-07 S4264 ANPS071E SPI80N08S2-07 SPP80N08S2-07 A410
    Text: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 7.1 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO262 -3-1 P- TO263 -3-2


    Original     		PDF SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 SPP80N08S2-07 Q67040-S4263 Q67040-S4264 2N0807 Q67060-S6082 2N0807 Q67060-S6082 SPB80N08S2-07 S4264 ANPS071E SPI80N08S2-07 A410

    2N0807

    Abstract: INFINEON PART MARKING to263
    Text: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS =Power-Transistor Product Summary Feature 75 VDS  N-Channel RDS on  Enhancement mode ID 175°C operating temperature P- TO262 -3-1  Avalanche rated max. SMD version P- TO263 -3-2 V 7.1 m 80 A P- TO220 -3-1


    Original     		PDF SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 SPB80N08S2-07 Q67040-S4263 Q67040-S4264 Q67060-S6082 2N0807 INFINEON PART MARKING to263