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    2N06L MOS Search Results

    2N06L MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    2N06L MOS Datasheets Context Search

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    2N06L

    Abstract: k12n06l K12N05 2N06L 13 STK12N
    Text: *57 S G S -T H O M S O N ilLHCTIIMDe 2 N osl STK12N06L s t k i N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STK12N05L STK12N06L V dss R DS on Id 50 V < 0.15 a < 0.15 a 12 A 12 A 60 V • . . ■ ■ . ■ TYPICAL RDS(on) = 0.115 £2


    OCR Scan     		PDF STK12N06L STK12N05L 2N06L k12n06l K12N05 2N06L 13 STK12N

    2N06L

    Abstract: 2N06L 11 12N06L 2N06L 13 mp10 D12N06L 2N06L mos 12N05L
    Text: *57 S G S -T H O M S O N ilLHCTIIMDe TYPE 2Nosl STD12N06L s t d i N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR R DS on Id S T D 12N05L V 50 V < 0.15 a 12 A S T D 12N06L 60 V < 0.15 £2 12 A dss • T Y P IC A L R DS(on) = 0.115 £1


    OCR Scan     		PDF STD12N06L 12N05L 12N06L 2N06L 2N06L 11 12N06L 2N06L 13 mp10 D12N06L 2N06L mos