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Infineon Technologies AG 2N06H5 Electronic Component
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2N06H5 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DIODE H5 SMD Abstract: 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5 Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V RDS on 5.5 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type Package	Original	SPP80N06S2-H5 SPB80N06S2-H5 Q67060-S6052 2N06H5 Q67060-S6053 BSPP80N06S2-H5 BSPB80N06S2-H5, DIODE H5 SMD 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5	PDF
2N06H5 Abstract: No abstract text available Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature VDS 55 R DS on 5.5 m ID 80 A P- TO263 -3-2 Avalanche rated V P- TO220 -3-1 dv/dt rated Type SPP80N06S2-H5 Package	Original	SPP80N06S2-H5 SPB80N06S2-H5 Q67060-S6052 Q67060-S6053 2N06H5 BSPP80N06S2-H5 BSPB80N06S2-H5,	PDF
2N06H5 Abstract: smd marking g24 DIODE H5 SMD ANPS071E IPB80N06S2-H5 IPP80N06S2-H5 PG-TO263-3-2 2N06 Text: IPB80N06S2-H5 IPP80N06S2-H5 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.2 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	IPB80N06S2-H5 IPP80N06S2-H5 PG-TO263-3-2 PG-TO220-3-1 SP0002-18162 2N06H5 2N06H5 smd marking g24 DIODE H5 SMD ANPS071E IPB80N06S2-H5 IPP80N06S2-H5 PG-TO263-3-2 2N06	PDF
2N06H5 Abstract: Q67060-S6052 Text: SPP80N06S2-H5 SPB80N06S2-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5.5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated	Original	SPP80N06S2-H5 SPB80N06S2-H5 P-TO220-3-1 P-TO263-3-2 P-TO220-3-1 Q67060-S6052 Q67060-S6053 2N06H5	PDF
2N06H5 Abstract: ANPS071E SPB80N06S2-H5 SPP80N06S2-H5 Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 5.5 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package	Original	SPP80N06S2-H5 SPB80N06S2-H5 Q67060-S6052 2N06H5 Q67060-S6053 BSPP80N06S2-H5 BSPB80N06S2-H5, 2N06H5 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5	PDF
2N06H5 Abstract: No abstract text available Text: SPP80N06S2-H5 SPB80N06S2-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5.5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated	Original	SPP80N06S2-H5 SPB80N06S2-H5 P-TO263-3-2 P-TO220-3-1 Q67060-S6052 2N06H5 2N06H5	PDF