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    2N COLLECTOR CHARACTERISTIC CURVE Search Results

    2N COLLECTOR CHARACTERISTIC CURVE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5407/BCA Rochester Electronics LLC 5407/BCA (DM: M38510/00803BCA), Buffer/Driver, Hex Inverting, Open Collector Output Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5409/BCA Rochester Electronics LLC 5409 - AND GATE, QUAD 2-INPUT, WITH OPEN-COLLECTOR OUTPUTS - Dual marked (M38510/01602BCA) Visit Rochester Electronics LLC Buy
    5401/BDA Rochester Electronics LLC 5401 - NAND GATE, QUAD 2-INPUT, WITH OPEN-COLLECTOR OUTPUTS - Dual marked (M38510/00107BDA) Visit Rochester Electronics LLC Buy
    5403/BCA Rochester Electronics LLC 5403 - NAND GATE, QUAD 2-INPUT, WITH OPEN-COLLECTOR OUTPUTS - Dual marked (M38510/00109BCA) Visit Rochester Electronics LLC Buy

    2N COLLECTOR CHARACTERISTIC CURVE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TIC 2260

    Abstract: si5464 RF Transistor 2n5038
    Text: 2N5038, 2N5039, 2N6496 File N um ber 698 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors D evices for S w itchin g and A m p lifie r C ircuits in Industrial and C o m m ercial A p p licatio n s Features: • ■ ■ ■ M axim um operating area curves for dc and pulse operation


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    2N5038, 2N5039, 2N6496 TIC 2260 si5464 RF Transistor 2n5038 PDF

    2N5430

    Abstract: 2N5427 2N5428 2N5429 transistor b 1560
    Text: MOS PEC MEDIUM-POWER NPN SILICON TRANSISITORS NPN 2N5427 Thru 2N5430 . designed for switching and wide-band amplifier applications FEATURES * DC Current Gain Specified to 7 Amperes. * Low Collector-Emitter Saturation Voltagev CE satf1-2V (M ax @ lc=7.0A


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    2N5427 N5430 N5427 2N5428 2N5429 2N5430 Curre5427 2N5427 transistor b 1560 PDF

    2n4208

    Abstract: FTS04124 27575 2n4239 4235 schlumberger 2N4123 2N4124 2N4125 2N4126
    Text: FAIRCHILD SEMICONDUCTOR " ~S4 F e J| 34LTL74 00B7S71 T 3469674 FAIRCHILD SEMICONDUCTOR 84D 27571 2N4123/FTS04123 2N4124/FTS04124 f a ip c h il d A Schlum berger C om pany NPN Small Signal General Purpose Am plifiers & Switches • • • • . . . 25 V Min (2N/FTS04124)


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    34LTL74 00B7S71 2N4123/FTS04123 2N4124/FTS04124 O-236AA/AB O-236AA/AB 2N4237/2N4238 2N4239 2n4208 FTS04124 27575 2n4239 4235 schlumberger 2N4123 2N4124 2N4125 2N4126 PDF

    2N706

    Abstract: TO-236-AA mps706 DE13 MPS-706
    Text: FAIRCHILD SEMICON DUC TO R 1 A4 DE134L,Tb74 GDE75DS 1 3469674 FA IRC HIL D S E MI CO ND UC TO R 84D 27502 D. 2N/MPS/FTS0706 MPS/FTS0706A FAIRCHILD A Schlum berger C om pany NPN High Speed Logic Switches . . . 20 V Min @ 10mA • 20 (Min) @ 10 mA n . . . 60 ns (Max) 2N/MPS/FTS0706), 25 ns (Max)


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    DE134L GDE75DS 2N/MPS/FTS0706 MPS/FTS0706A 2N/MPS/FTS0706) MPS/FTS0706A) MPS3640 2N706 MPS706 MPS706A TO-236-AA DE13 MPS-706 PDF

    T147

    Abstract: 3307r schlumberger 2N4896 2N5220 2N4400 2N4401 2N4402 2N4403 FTS04400
    Text: FAIRCHILD SEMICON DUC TO R fi4 DEj34t.Tt.74 0D27Sfll 1 3469674 FAIRCHILD SEMICONDUCTOR „ IDCHILD i, A Schlumberger Company • • • • • 84D 27581 D mmm 2N4400/FTS04400 ' ' - t r - i i 2N4401/FTS04401 Small Signal General Purpose Amplifiers & Switches


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    D27Sfll 2N4400/FTS04400 2N4401/FTS04401 2N/FTS04401) 2N4402, 2N4403 2N4400 2N4401 FTS04400 T147 3307r schlumberger 2N4896 2N5220 2N4402 2N4403 PDF

    92CS-2GS66

    Abstract: P6019 TA8709 2N6467
    Text: File N u m be r 2N6467, 2N6468 888 Silicon P-N-P Medium-Power Transistors TERMINAL DESIGNATIONS F L A N G E ! G eneral-Purpose Types for Sw itching Application Features: • Low saturation voltages ■ M axim um -safe-area-of-operation curves JEDEC TO-213AA


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    2N6467, 2N6468 O-213AA TA8710, TA8709, 2N6467 92CS-26969 2N6468. 92CS-2GS66 P6019 TA8709 2N6467 PDF

    2N2222A motorola

    Abstract: equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola
    Text: q S S • o f e S M A X IM U M RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Symbol 2N2219 2N2222 2N2218A 2N2219A 2N2222A Unit v CEO 30 40 Vdc v CBO 60 75 Vdc v EBO 5.0 6.0 Vdc mAdc


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    2N2219 2N2222 2N2218A 2N2219A 2N2222A 2N2222A motorola equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola PDF

    fairchild 2N2222A

    Abstract: 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222
    Text: •FAIRCHILD SEMICONDUCTOR 7 fl4 DlF| 3 4 ^ b 7 4 ~ 0 0 E 7 S 0 4 S 3469674 FAIRCHILD SEMICONDUCTOR m m as&i\ f a i^ urn ram h i^ 84D 27504 2N 718A 2N 1613 T - ^ - D H ¿3 A Schlumberger Company NPN Small Signal General Purpose Am plifiers • • Vceo . . . 32 V Min


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    QDE75D4 2N718A 2N1613 fairchild 2N2222A 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222 PDF

    2222 a

    Abstract: MOTOROLA 2N2905A 2N2904 2N2905A RS 2N2219 MOTOROLA 2N2218 2n2907 331
    Text: PNP SILICON ANNULAR HERMETIC TRANSISTORS 2N2904,A* . . . d e s ig n e d fo r h ig h -sp e e d s w itc h in g c irc u its , DC to VHF a m p lifie r a p p lic a ­ tio n s and c o m p le m e n ta ry c irc u itry . thru • H igh DC C u rre n t G ain S p e cifie d — 0.1 to 500 m A d c


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    2N2904 2N2907 /2N2905 O-205AD) 2N2904, 2N2218, 2N2219, 2N2221, 2222 a MOTOROLA 2N2905A 2N2905A RS 2N2219 MOTOROLA 2N2218 2n2907 331 PDF

    MPSL08

    Abstract: 2N5224 schlumberger 5225 2N5226 2N5223 2N5225 2N5227 2N5228 2N5224 current gain mps-l08
    Text: FAIRCHILD SEMICON DUC TO R s 3469674 F A IR C H IL D f l4 84D SEM ICONDUCTOR • • • 27596 " |~ D N P N S m all Signal G en eral Purpose A m p lifie r & O sc illa to r A Schlumberger Company • 3 2N5223/FTS05223 FAIRCHILD • • D eT J PACKAGE 2N5223


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    275cit] 2N5223/FTS05223 2N/FTS05227 100MHz MPSL08 2N5224 schlumberger 5225 2N5226 2N5223 2N5225 2N5227 2N5228 2N5224 current gain mps-l08 PDF

    PN2218

    Abstract: 2N2218 PN2221
    Text: FAIRCHILD SEM ICO NDUCTOR f l 4 D l F | 34 b T b 74 002751b 1 | ~ 3469674 FAIRCHILD SEMICONDUCTOR 84D 27516 D • 2 N /P N /F T S 0 2 2 1 8 _ f a ir c h il d B , 2N/PN/FTS02221 A Schlum berger C om pany ^ H NPN Small Signal General Purpose Am plifiers & Switches


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    002751b 2N/PN/FTS02221 PN2218 2N2218 PN2221 PDF

    tp 312 transistor

    Abstract: Motorola transistors 2N5192 2N5190 MOTOROLA 2N5190
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N 5192* Silicon NPN Power TVansistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194,2N5195. •MAXIMUM RATINGS Rating Collector-Emitter Voltage


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    2N5194 2N5195. 2N5191 2N5192 2N5190 tp 312 transistor Motorola transistors 2N5192 2N5190 MOTOROLA PDF

    2N2907A FAIRCHILD SEMICONDUCTOR

    Abstract: 2N2904 transistor TO92 2N3053 characteristic curves Fairchild, 2N3019 2N2904 FAIRCHILD SEMICONDUCTOR 2N2907A fairchild FTS02907A TRANSISTOR 2n3108 fairchild 2n3019 transistor 2N 3020
    Text: FAIRCHILD SEMICONDUCTOR A4 DE 3 4 b cIL,7M 00S7S3L: 7 3 4 69 67 4 F A I R C H I L D S E M I C O N D U C T O R 84D 27536 2N2710/FTS02710 ^ 3ir^ NPN Small Signal High Speed Low Power Saturating Switch Transistor F A IR C H IL D A Schlumberger Company PACKAGE


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    34bcit174 2N2710/FTS02710 2N2710 FTS02710 O-236AA/AB 2N3107) 2N3108) 2N3109) 140kHz 2N2907A FAIRCHILD SEMICONDUCTOR 2N2904 transistor TO92 2N3053 characteristic curves Fairchild, 2N3019 2N2904 FAIRCHILD SEMICONDUCTOR 2N2907A fairchild FTS02907A TRANSISTOR 2n3108 fairchild 2n3019 transistor 2N 3020 PDF

    2n6520

    Abstract: 2N6517 bc250 2n6519
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N 6517 PNP 2N 6519 2N 6520 PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol 2N6515 2N6519 2N6517 2N6520 C oilector-E m itter Voltage v CEO 250 300 350 Vdc C ollector-B ase Voltage


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    2N6515, 2N6516, 2N6517 2N6519, 2N6520 2N6515 2N6519 2N6520 1/2MSD7000 bc250 2n6519 PDF

    k 3878

    Abstract: 2N3879 2N650A 2n5202 2N3879A
    Text: P o w e r Tran sistors File Num ber 766 2N3878, 2N3879, 2N5202, 2N6500 HARRIS SEMICOND SECTOR 27E D • 4302E71 OOnflBl 0 * H A S ~ r - 3 3 - i / High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors F o r H ig h -S p e e d S w itc h in g and L in e a r-A m p lifie r A p p lic a tio n s


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    2N3878, 2N3879, 2N5202, 2N6500 4302E71 k 3878 2N3879 2N650A 2n5202 2N3879A PDF

    2n5302

    Abstract: 2n5301 2n5303 200WATT TRANSISTOR 2n5302
    Text: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N 5301 2N 5302 2N 5303 H igh-P ow er NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON


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    2N5301/D 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2n5302 2n5301 2n5303 200WATT TRANSISTOR 2n5302 PDF

    2N6488 MOTOROLA

    Abstract: 2N6486 2N6486 MOTOROLA 2n6488 2n6487
    Text: MOTOROLA SC XSTRS/R F 1SE d I b 3b7SS4 GDfl4fci5E fi | MOTOROLA SEMICONDUCTOR TECHNICAL DATA COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS hpE = 2 0 - 1 5 0 @ lc = 5.0 Adc = 5.0 Min @ l c = 15 Adc VCEO (sus) = 40 Vdc (Min) - 2 N 6486, 2N 6489 = 60 Vdc (Min) - 2N6487, 2N 6490


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    2N6486 2N6487 2N6488 2N6489 2N6490 2N6491 2N6487, 2N6486, 2N6488 MOTOROLA 2N6486 MOTOROLA 2n6488 PDF

    2N3725

    Abstract: complement to 2n3700 2N3253 TA100-F FTS03904 curve set t144 2N3700 2N3724 test 2N3700 tl 4013
    Text: FAIRCHILD SEMICONDUCTOR _ A4 _ DE §341^1,74 GOSTSSl 3 FAIRCHILD 2N3253 A Schlumberger Company NPN Switching Type ABSOLUTE MAXIMUM RATINGS Note 1 Temperatures Storage Temperature -65° C to 200° C Operating Junction Temperature 200° C Power Dissipation (Notes 2 & 3)


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    2N3253 2N3253 2N3725 complement to 2n3700 TA100-F FTS03904 curve set t144 2N3700 2N3724 test 2N3700 tl 4013 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N 5301 2N 5302 2N 5303 H igh-P ow er NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON


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    2N5301/D 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 PDF

    2N4923

    Abstract: transistor 2n
    Text: MOTOROLA Order this document by 2N4921/D SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N 4923* M edium -Pow er Plastic NPN Silicon Transistors . . . d e sig ne d fo r d riv e r c irc u its , s w itc h in g , and a m p lifie r a p p lic a tio n s . These high-perform ance plastic devices feature:


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    2N4921/D 2N4921 2N4918, 2N4919, 2N4920 O-225AA 2N4923 transistor 2n PDF

    2n5302

    Abstract: 2N5301 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N 5302 2N 5303 H igh-Pow er NPN Silicon lYansistors ‘Motorola Prtftrrxi D*vlc* . . . for use in power amplifier and switching circuits applications. • H ig h Collector-Emitter Sustaining Voltage — VcEO sus = 80 Vdc (Min) @ lc = 200 mAdc (2N5303)


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    2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2N510 2N5301 2n5302 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp PDF

    2N2222A 331

    Abstract: 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331
    Text: MOTOROLA SC XSTRS/R 12E F 2N2218A 2N2219A 2N2221A 2N2222A 2N5581 2N55S2 Unît 40 40 Vdc Vdc Sym bol 2N2218 2N2219 2N2221 2N2222 Collector-Emitter Voltage v CEO 30 Collector-Base Voltage VCBO 60 75 75 Emrtter*Base Voltage Ve b o 5.0 6.0 6.0 Vdc 'c 800 800 800


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    b3b7E54 2N2218 2N2219 2N2221 2N2222 2N2218A 2N2219A 2N2221A 2N2222A 2N2218, 2N2222A 331 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331 PDF

    2N6488 MOTOROLA

    Abstract: 1N5825 221A-06 2N6487 2N6488 2N6490 2N6491 2N6497 MSD6100 ISS-20
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6487 Com plem entary Silicon P lastic Power Transistors 2N 6488* PNP . . . designed for use in general-purpose amplifier and switching applications. 2N 6490 2 N6491* • DC Current Gain Specified to 15 Amperes —


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    2N6487 2N6490 2N6488 2N6491 O-220AB 2N6490 2N6491 2N6488 MOTOROLA 1N5825 221A-06 2N6497 MSD6100 ISS-20 PDF

    TO111 package

    Abstract: 2N278 2N2879 2N2880 2N2877 TWX910-950-1942 2N2878
    Text: 3918590 GENERAL 95D SEM ICON DUCTOR General Sf* Sem iconductor ^ « Industries, Inc. 02100 2N 2877 2N 2878 2N 2879 2N 2880 T -3*- SQ U H R E TÌ COMPANY DIFFUSED SILICON EPITAXIAL PASSIVATED TRANSISTOR NPN SILICON HIGH-POWER TRANSISTORS T h e » devices are designed for use In power amplifiers and switching applications,


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    TWX910-950-1942 TO111 package 2N278 2N2879 2N2880 2N2877 2N2878 PDF