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    2N 60 APPLICATION NOTES Search Results

    2N 60 APPLICATION NOTES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TSL1401CCS-RL2 Rochester Electronics TSL1401 - 128 x 1 Linear Sensor Array with hold. Please note, an MOQ and OM of 250 pcs applies. Visit Rochester Electronics Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    MD8087/R Rochester Electronics LLC Math Coprocessor, CMOS Visit Rochester Electronics LLC Buy

    2N 60 APPLICATION NOTES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC-3180

    Abstract: Nec 78F0034 IC-8635 sp 8635 IC-8636 ic u11 78F0058 IC-8884 IC-8632 78f0034
    Text: 78K/0 SERIES 8-BIT SINGLE-CHIP MICROCONTROLLERS INSTRUCTIONS FOR ALL 78K/0 SERIES 1995 Document No. U12326EJ3V0UM00 3rd edition (O. D. No. IEU-849) Date Published June 1997 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


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    PDF 78K/0 U12326EJ3V0UM00 IEU-849) IC-3180 Nec 78F0034 IC-8635 sp 8635 IC-8636 ic u11 78F0058 IC-8884 IC-8632 78f0034

    Nec 78F0034

    Abstract: IC-8884 78058F PD78002Y uPD78014Y uPD78018FY uPD78054Y uPD78058FY U11993E uPD78075BY
    Text: 78K/0 SERIES 8-BIT SINGLE-CHIP MICROCONTROLLERS INSTRUCTIONS FOR ALL 78K/0 SERIES 1995 Document No. U12326EJ3V0UM00 3rd edition (O. D. No. IEU-849) Date Published June 1997 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


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    PDF 78K/0 U12326EJ3V0UM00 IEU-849) Nec 78F0034 IC-8884 78058F PD78002Y uPD78014Y uPD78018FY uPD78054Y uPD78058FY U11993E uPD78075BY

    radix 2 FFT source code for ts201

    Abstract: ADSP-TS201 TS201 R26S ADSP-TS201 datasheet ts101 dsp application note 512 j122 FR29 YR13 EE-218
    Text: Engineer-to-Engineer Note a EE-218 Technical notes on using Analog Devices DSPs, processors and development tools Contact our technical support at dsp.support@analog.com and at dsptools.support@analog.com Or visit our on-line resources http://www.analog.com/ee-notes and http://www.analog.com/processors


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    PDF EE-218 ADSP-TS201 EE-218) FFT32 radix 2 FFT source code for ts201 TS201 R26S ADSP-TS201 datasheet ts101 dsp application note 512 j122 FR29 YR13 EE-218

    2N2147

    Abstract: 2N2160 2N1756 2N2217 2N1305 2N1307 2N1308 Application of 2n1304 PNP 2N2923 2N1303
    Text: 57 T ransistors Continued Notes 1> M inim um value {2 Average value (3> Max. unilateralized power gain (4) Max. frequency o f oscillation {5) W ith heat sink Pto t: Max. total dissipation in free air a t 25°C ambient temp. Vcbo: Max. collector-to-base voltage, em itter


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    PDF 2N987 100mW lOOmc121 2N1131 600mW 150mA 2N1132 25/iA 2N2217 2N2147 2N2160 2N1756 2N1305 2N1307 2N1308 Application of 2n1304 PNP 2N2923 2N1303

    2N2147

    Abstract: fet 2n2646 2n2926 2n3055 tos 2N1305 npn 2N2926 2N1304 2n1304 transistor 2N1309 2N1308
    Text: 57 T ransistors Continued Notes 1> M inim um value {2 Average value (3> Max. unilateralized power gain (4) Max. frequency o f oscillation {5) W ith heat sink Pto t: Max. total dissipation in free air a t 25°C ambient temp. Vcbo: Max. collector-to-base voltage, em itter


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    PDF 2N987 100mW lOOmc121 2N1131 600mW 150mA 2N1132 360mW 120mcf2) 2N2147 fet 2n2646 2n2926 2n3055 tos 2N1305 npn 2N2926 2N1304 2n1304 transistor 2N1309 2N1308

    TLP 527

    Abstract: tlp527 2N 60 Application notes TIP527 TIP528 2N4998 2N5685 TIP640
    Text: TYPES TIP527, TIP528 P-N-P SILICON POWER TRANSISTORS FOR P O W ER -A M PLIFIE R A N D H IG H -SPEED -SW ITC H IN G A P PLIC A TIO N S r mechanical data • 20 0 V Min V B R C E O • 8-A Rated Continuous Collector Current • 60 Watts at 100°C Case Temperature


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    PDF TIP527, TIP528 TLP 527 tlp527 2N 60 Application notes TIP527 2N4998 2N5685 TIP640

    2N6884

    Abstract: 2N5683 2N5684 c358c 2N5685 2N4998 TIP640
    Text: TYPES 2NS683, 2N5684 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR P O W ER -A M PLIFIER A N D H IG H-SPEED-SW ITCHING A P PLIC A TIO N S DESIG N E D FOR C O M P LE M E N TA R Y USE W ITH 2N 5685, 2IM5686 V • 300 Watts at 25°C Case Temperature | •


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    PDF 2NS683, 2N5684 2N5685, 2IM5686 2N5683 2N5684 2N6884 c358c 2N5685 2N4998 TIP640

    TLP647

    Abstract: TIP 642 transistor transistor 2N 3792 BV 642 TIP640 TIP641 TIP642 TIP645 TIP646 TIP647
    Text: TYPES TIP645, TIP646, TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED IFOR COMPLEMENTARY USE WITH TIP640, TIP641, TIP642 175 W at 25°C Case Temperature • Min h f e of 1000 at 4 V , 5 A 10-A Rated Collector Current • 100 mJ Reverse Energy Rating


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    PDF TIP645, TIP646. TIP647 TIP640, TIP641, TIP642 TLP647 TIP 642 transistor transistor 2N 3792 BV 642 TIP640 TIP641 TIP645 TIP646

    2n 3681

    Abstract: No abstract text available
    Text: 12 11 10 7 8 DIM 4 NOTES: 1 M ATERIALS: HOUSING - LIQUID CR YS TA L POLYMER. U L 94 V - 0 W AFER DIELECTRIC - LIQUID C R YS TA L POLYMER. U L 94 V - 0 CONTACT - COPPER ALLOY 2) FINISHES CONTACT INTERFA CE 0 .7 6 MICROMETER MINIMUM SE LEC T GOLD OVER 1.27 MICROMETER MINIMUM NICKEL O VERALL


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    PDF SD-75019-010 2n 3681

    BD633

    Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
    Text: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.


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    PDF BD633, BD635, BD637 BD633 BD635 BD637 darlington complementary power amplifier tip 142 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120

    TIP 642 transistor

    Abstract: transistor 2N 3792 2N5333 4998 transistor 2N4300 APPLICATION MIN 5758 2N DIODE TIP 75 transistor
    Text: TYPE 2N5333 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTOR FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4300 15 W at 100°C Case Temperature Max V E|„, of 0.45 V at 1 A Typ ton of 150 ns at 1 A l c lc


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    PDF 2N5333 2N4300 150ns TIP 642 transistor transistor 2N 3792 2N5333 4998 transistor 2N4300 APPLICATION MIN 5758 2N DIODE TIP 75 transistor

    2N6331

    Abstract: 2N6330 2N6326 2N6327 2N6328 2N6329 2n6328 texas instruments transistor 2N 3792 PC15A LW 2411
    Text: T Y P E S 2 N 6 3 2 9 , 2N6330, 2N6331 P - N - P S I N G L E - D I F F U S E D M E S A S IL IC O N P O W E R T R A N S I S T O R S FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25°C Case Temperature


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    PDF 2N6329, 2N6330, 2N6331 2N6326, 2N6327, 2N6328 200-mJ 2M6329 2N6330 2N6331 2N6326 2N6327 2N6328 2N6329 2n6328 texas instruments transistor 2N 3792 PC15A LW 2411

    B0738

    Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073
    Text: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m


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    PDF BD734, BD736, BD738 BD733, BD735, BD737 B0738 b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N4398/D SEMICONDUCTOR TECHNICAL DATA 2N4347 See 2N3442 PNP Silicon H igh-Pow er Transistors 2N 4398 2N 4399 2N 5745 . . . designed for use in power amplifier and switching circuits. • • • Low C ollector-Em itter Saturation Voltage —


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    PDF 2N4398/D 2N4398 2N5745 2N5302, 2N5303 2N4347 2N3442)

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N3905/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N 3906* PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r V oltag e VCEO 40 V dc C o lle c to r-B a s e V oltag e


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    PDF 2N3905/D 2N3905

    TIP42C EQUIVALENT

    Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
    Text: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C


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    PDF TIP42, TIP42A. TIP42B. TIP42C TIP41, TIP41A, TIP41B, TIP41C TIP42 TIP42A TIP42C EQUIVALENT TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122

    6075A

    Abstract: 2n607 2N6073A 2N6075A 6073a 2N thyristor 2N6071
    Text: MOTOROLA Order this document by 2N6071/D SEMICONDUCTOR TECHNICAL DATA 2N 6071A ,B * 2N 6073A .B * 2N 6075A .B * Sensitive Gate Triacs Silicon Bidirectional Thyristors "Motorola preferred devices . . . designed primarily for full-wave ac control applications, such as light dimmers,


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    PDF 2N6071/D 2N6071 2N6073A 2N6075A 6075A 2n607 6073a 2N thyristor

    motorola 2N5877

    Abstract: 2N5877 2N5875 2N5876
    Text: MOTOROLA S E M IC O N D U C T O R Order this document T E C H N IC A L D A T A bv 2 N 5 8 7 7 /d NPN 2 N 58 77 2 N 5 8 78 Com plem entary Silicon H igh-Pow er Transistors . . . designed for general-purpose power amplifier and switching applications. • •


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    PDF 2N5877/D motorola 2N5877 2N5877 2N5875 2N5876

    tlp641

    Abstract: IIP64 transistor 2N 3792 T1P640 TIP640 TIP641 TIP642 TIP645 TIP646 TIP647
    Text: TYPES TIP640, TIP641, TIP642 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FOR C O M P L E M E N T A R Y U SE W ITH TIP645, TIP646, TIP647 175 W at 2Ei°C Case Temperature • Min hpE of 1000 at 4 V, 5 A 10-A Rated Collector Current • 100-mJ Reverse Energy Rating


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    PDF TIP640, TIP641. TIP64Z TIP645, TIP646, TIP647 100-mJ tlp641 IIP64 transistor 2N 3792 T1P640 TIP640 TIP641 TIP642 TIP645 TIP646

    2n 5550

    Abstract: 2N5551 diodes inc 2n5551
    Text: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N 5551* NPN Silicon COLLECTOR 3 MAXIMUM RATINGS Symbol 2N5550 2N5551 Unit C o lle c to r-E m itte r Voltage Rating VCEO 140 160 Vdc C o lle c to r-B a s e Voltage


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    PDF 2N5550/D 2N5550 2N5550 2N5551 2n 5550 2N5551 diodes inc 2n5551

    2n5302

    Abstract: 2n5301 2n5303 200WATT TRANSISTOR 2n5302
    Text: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N 5301 2N 5302 2N 5303 H igh-P ow er NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON


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    PDF 2N5301/D 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2n5302 2n5301 2n5303 200WATT TRANSISTOR 2n5302

    Tip 26C transistor

    Abstract: tip 26c T1P142 tip140 texas instruments TIP142 Application Note TIP14Z 1N014 tlp142 circuit 2N 3055 transistor tip 3055
    Text: TYPES TIP140, TIP141, TIP142 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED FOR COM PLEM ENTARY USE WITH TIP145, TIP146, TIP147 125 W at 25°C Case Temperature • Min hpE of 1000 at 4 V , 5 A 10-A Rated Collector Current • 100-mJ Reverse Energy Rating


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    PDF TIP140, TIP141, TIP142 TIP145, TIP146, TIP147 100-mJ TIP140 TIP141 T1P142 Tip 26C transistor tip 26c T1P142 tip140 texas instruments TIP142 Application Note TIP14Z 1N014 tlp142 circuit 2N 3055 transistor tip 3055

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N 5301 2N 5302 2N 5303 H igh-P ow er NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON


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    PDF 2N5301/D 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745

    TIP 41 transistor

    Abstract: tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147
    Text: T Y P E S TIP 36, TIP36A, TIP36B, TIP36C P-N-P SINGLE-DIFFUSED M ESA SILICO N POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 3 5 , T IP 3 5 A , T IP 3 5 B , T IP 3 5 C


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    PDF TIP36, TIP36A, TIP36B, TIP36C TIP35, TIP35A, TIP35B, TIP35C TIP36 TIP36A TIP 41 transistor tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147